HAT2005F Silicon N Channel Power MOS FET Application SOP–8 Power switching 8 5 7 6 Features • • • • 5 6 7 8 D D D D Low on–resistance Capable of 2.5V gate drive Low drive current High density mounting 3 1 2 4 G 1 2, 3 4 5, 6, 7, 8 Ordering Information S S 2 3 ———————————————————— Hitachi Cord 4 FP–8D N/C Source Gate Drain ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) HAT2005F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.05 0.065 Ω ID = 2A VGS = 4V * ———————————————————————— — 0.06 0.09 Ω ID = 2A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 10 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 810 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 100 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Turn–off time toff — 270 — ns VDD = 10 V ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.9 — V IF = 3.5 A, VGS = 0 ——————————————————————————————————————————— * Pulse Test HAT2005F Power vs. Temperature Derating Channel Dissipation Pch (W) 2.0 Test Condition : When using the glass epoxy board (40 x 40 x 1.6 mm) 1.5 1.0 0.5 0 50 100 150 Ambient Temperature 200 Ta (°C) Package Dimensions Unit : mm • SOP–8 0.75 Max 6.8 Max + 0.05 4 0.20 – 0.02 1 2.03 Max 5 2.00 Max 8 4.55 Max 5.25 Max 0 – 10 ° 0.40 + 0.10 – 0.05 0.25 0.60 +– 0.18 0.10 ± 0.10 1.27 0.1 0.12 M FP–8D Hitachi Code SC–527–8A EIAJ — JEDEC