HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406A (Z) Rev.1 Feb. 2002 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for 10 Gb/s WDM systems up to 40 km. Features • Wide wavelength coverage: λp = 1527 to 1565 nm (C-BAND) • High extinction ratio: 10 dB Min under modulated • Dynamic single longitudinal mode: Sr = 40 dB Typ • Package: open air package (chip on carrier) with micro strip-line Package Type • HL1513AF: AF Internal Circuit 2 3 LD 50Ω 1 Modulator HL1513AF Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit LD forward current IF 150 mA Laser diode reverse voltage VR(LD) 2 V Modulator forword voltage VF(EA) 1 V Modulator reverse voltage VR(EA) 5 V Operating temperature Topr +15 to +35 °C Storage temperature * Tstg −40 to +85 °C Note: without condensation Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Threshold current Ith Optical output power PO 2 Extinction ratio ER 10 Lasing wavelength λp Side-mode suppression ratio Typ Max Unit 25 mA dBm IF(LD) = 60 mA, Modulated * dB IF(LD) = 60 mA, Modulated * 1527 1550 1565 nm IF(LD) = 60 mA, Modulated * Sr 35 dB IF(LD) = 60 mA, Modulated * Transmission dispersion penalty Pd 2 dB IF(LD) = 60 mA, Modulated *, SMF 40 km Cutoff frequency S21 12 GHz IF(LD) = 60 mA, VR(EA) = −1 V RF return loss S11 8 dB 0.13 to 5 GHz 5 dB 5 GHz to 10 GHz Note: 9.95328 Gb/s, NRZ, V offset = 0 to −1 V, V mod = 2.5 Vpp max Rev.1, Feb. 2002, page 2 of 5 Test Conditions HL1513AF Package Dimensions As of July, 2001 Unit: mm 1 ± 0.2 6 ± 0.3 2 1 2 ± 0.15 3 5 ± 0.2 3 ± 0.2 11.2 ± 0.2 (1) (0.1) Area A 2 – φ 2.3 ± 0.2 3 ± 0.2 6 ± 0.2 Pm Po Enlargement of Area A Hitachi Code JEDEC JEITA Mass (reference value) LD/AF — — 1.1 g Rev.1, Feb. 2002, page 3 of 5 HL1513AF Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. Rev.1, Feb. 2002, page 4 of 5 HL1513AF Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Feb. 2002, page 5 of 5