Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max. 1200V Min. 20µA Max. Test Conditions TJ = 25°C, IF = 8.0A TJ = 25°C, IR = 200µA TJ = 25°C, VR = 1200V Mechanical Data Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.169" x 0.220" 125mm, with std. < 100 > flat .015" ± .003" 01-5170 100 Microns 0.25mm Diameter Minimum See Die Outline drawing below Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : HFA16PB120 Die Outline NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. DIMENSIONAL TOLERANCES : BONDING PADS : < 0.635 TOLERANCE = ± 0.013 WIDTH < (.0250) TOLERANCE = ± (.0005) & > 0.635 TOLERANCE = ± 0.025 LENGTH > (.0250) TOLERANCE = ± (.0010) OVERALLDIE < 1.270 TOLRANCE = ± 0.102 WIDTH < (.050) TOLERANCE = ± (.004) & > 1.270 TOLERANCE = ± 0.203 LENGTH > (.050) TOLERANCE = ± (.008)