VS-GB90DA120U Datasheet

VS-GB90DA120U
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
SOT-227
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
IC DC
90 A at 90 °C
VCE(on) typical at 75 A, 25 °C
3.3 V
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit
Single switch diode
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
SYMBOL
TEST CONDITIONS
VCES
MAX.
UNITS
1200
V
TC = 25 °C
149
TC = 90 °C
90
Continuous collector current
IC (1)
Pulsed collector current
ICM
200
Clamped inductive load current
ILM
200
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
IF
TC = 25 °C
76
TC = 90 °C
46
VGE
PD
PD
VISOL
± 20
TC = 25 °C
862
TC = 90 °C
414
TC = 25 °C
357
TC = 90 °C
171
Any terminal to case, t = 1 min
2500
A
V
W
V
Note
(1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
Revision: 20-May-16
Document Number: 94722
1
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
Temperature coefficient of threshold
voltage
VGE(th)/TJ
Collector to emitter leakage current
ICES
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 250 μA
1200
-
-
VGE = 15 V, IC = 75 A
-
3.3
3.8
VGE = 15 V, IC = 75 A, TJ = 125 °C
-
3.6
3.9
VGE = 15 V, IC = 75 A, TJ = 150 °C
-
3.7
-
VCE = VGE, IC = 250 μA
4
5
6
VCE = VGE, IC = 250 μA, TJ = 125 °C
-
3.2
-
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-12
-
mV/°C
μA
VGE = 0 V, VCE = 1200 V
-
7
250
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
1.4
10
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
6.5
20
UNITS
V
mA
VGE = 0 V, IF = 75 A
-
3.4
5.0
Forward voltage drop, diode
VFM
VGE = 0 V, IF = 75 A, TJ = 125 °C
-
3.2
5.2
VGE = 0 V, IF = 75 A, TJ = 150 °C
-
3.05
-
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
-
± 250
nA
MIN.
TYP.
MAX.
UNITS
-
690
-
-
65
-
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
-
250
-
IC = 50 A, VCC = 600 V, VGE = 15 V
Turn-on switching loss
Eon
-
1.2
-
Turn-off switching loss
Eoff
-
2.1
-
Total switching loss
Etot
-
3.3
-
Turn-on delay time
td(on)
-
250
-
-
38
-
-
280
-
-
90
-
-
1.7
-
-
4.08
-
-
5.78
-
-
245
-
-
48
-
-
280
-
-
140
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Turn-off delay time
Fall time
Reverse bias safe operating area
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
tf
Turn-on switching loss
Rise time
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
tr
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
td(off)
tf
RBSOA
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Irr
Diode recovery charge
Qrr
TJ = 150 °C, IC = 200 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
nC
mJ
ns
mJ
ns
Fullsquare
-
140
-
ns
-
13
-
A
Qrr
-
860
-
nC
trr
-
210
-
ns
-
19
-
A
-
1880
-
nC
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
TJ = 125 °C
Revision: 20-May-16
Document Number: 94722
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB90DA120U
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
MIN.
TYP.
-40
-
TJ, TStg
IGBT
Junction to case
TEST CONDITIONS
RthJC
Diode
Case to heatsink
RthCS
Flat, greased surface
Weight
Torque to terminal
Mounting torque
Torque to heatsink
160
-
150
°C
-
0.145
-
-
0.35
-
0.05
-
-
30
-
g
-
-
1.1 (9.7)
Nm (lbf.in)
-
-
1.3 (11.5)
Nm (lbf.in)
°C/W
160
140
120
DC
100
80
60
40
20
0
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
IC - Continuous Collector Current (A)
IF - Continuous Forward Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 3 - Allowable Forward Current vs. Case Temperature
Diode Leg
160
200
VGE = 15 V
IF - Forward Current (A)
IC - Collector-to-Emitter Current (A)
UNITS
SOT-227
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
Case style
MAX.
150
TJ = 125 °C
100
TJ = 150 °C
TJ = 25 °C
50
120
TJ = 150 °C
80
TJ = 125 °C
TJ = 25 °C
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
1.0
2.0
3.0
4.0
5.0
VCE - Collector-to-Emitter Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 2 - Typical Collector to Emitter Current
Output Characteristics of IGBT
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
Revision: 20-May-16
Document Number: 94722
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VS-GB90DA120U
Vishay Semiconductors
100
VCE - Collector-to-Emitter Voltage (V)
IC - Collector-to-Emitter Current (A)
www.vishay.com
90
80
70
60
TJ = 125 °C
50
40
30
TJ = 25 °C
20
10
0
4.5
5.0
5.5
6.0 6.5
7.0
7.5
8.0
5
4.5
IC = 100 A
4
IC = 75 A
3.5
3
IC = 50 A
2.5
IC = 25 A
2
1.5
1
0
8.5 9.0
20
Fig. 5 - Typical IGBT Transfer Characteristics
80
100
120
140
160
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, VGE = 15 V
5
100
4.5
TJ = 150 °C
10
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
Switching Energy (mJ)
ICES - Collector-to-Emitter Current (A)
60
TJ - Junction Temperature (°C)
VGE - Gate-to-Emitter Voltage (V)
Eoff
4
3.5
3
2.5
2
Eon
1.5
1
0.5
0.0001
0
0
200
400
600
800
1000
1200
10
VCES - Collector-to-Emitter Voltage (V)
20
30
40
50
60
70
80
90
100
IC - Collector Current (A)
Fig. 9 - Typical IGBT Energy Losses vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V, Diode used HFA16PB120
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
1
6
TJ = 25 °C
5.5
td(off)
5
Switching Time (μs)
VGE(th) Threshold Voltage (V)
40
4.5
4
TJ = 125 °C
3.5
3
td(on)
tf
0.1
tr
2.5
0.01
2
0.20
0.40
0.60
0.80
1.00
0
20
40
60
80
IC (A)
IC - Collector Current (A)
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V, Diode used HFA16PB120
Revision: 20-May-16
Document Number: 94722
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB90DA120U
www.vishay.com
Vishay Semiconductors
14
3000
VR = 200 V
IF = 50 A
Eon
12
Qrr (nC)
Energy Losses (mJ)
2500
10
Eoff
8
6
2000
125 °C
1500
4
25 °C
1000
2
0
500
0
10
20
30
40
50
100
Rg (Ω)
dIF/dt (A/μs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg,
TJ = 125 °C, IC = 75 A, L = 500 μH,
VCC = 600 V, VGE = 15 V, Diode used HFA16PB120
Fig. 14 - Stored Charge vs. dIF/dt of Diode
40
10 000
35
td(on)
1000
VR = 200 V
IF = 50 A
30
td(off)
IRR (A)
Switching Time (µs)
1000
tf
25
125 °C
20
100
15
tr
25 °C
10
10
5
0
10
20
30
40
50
RG (Ω)
100
1000
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
300
VR = 200 V
IF = 50 A
trr (ns)
250
125 °C
200
150
25 °C
100
50
100
1000
dIF/dt (A/μs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
Revision: 20-May-16
Document Number: 94722
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB90DA120U
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.75
0.50
PDM
0.25
0.01
t1
0.1
0.05
0.02
DC
0.001
0.0001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.75
0.50
0.1
0.25
PDM
0.1
0.05
0.01
t1
0.02
t2
DC
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
1000
IC (A)
100
10
1
10
100
1000
10 000
VCE (V)
Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V,
Revision: 20-May-16
Document Number: 94722
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VS-GB90DA120U
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Vishay Semiconductors
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 19a - Clamped Inductive Load Test Circuit
Fig. 19b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 20a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 20b - Switching Loss Waveforms Test Circuit
Revision: 20-May-16
Document Number: 94722
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VS-GB90DA120U
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ORDERING INFORMATION TABLE
Device code
VS-
G
B
90
D
A
120
U
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
B = IGBT Generation 5
4
-
Current rating (90 = 90 A)
5
-
Circuit configuration (D = Single switch with antiparallel diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = Ultrafast IGBT)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Single switch with
antiparallel diode
Lead Assignment
4
3
1
2
D
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 20-May-16
Document Number: 94722
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Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
Document Number: 95423
1
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Revision: 02-Oct-12
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Document Number: 91000