ASI AP1000B-00

AP1000B-00
SILICON PIN DIODE CHIP
DESCRIPTION:
The AP1000B-00 is a Planar Silicon
PIN Diode Chip Designed for High
Speed Switch and Limiter Applications
Up to 18 GHz.
FEATURES INCLUDE:
• Low Capacitance - 0.10 pF Typical
• Fast Switching - 10 nS Typical
• SiO2 Passivation
PACKAGE STYLE CHP152
MAXIMUM RATINGS
IF
100 mA
VR
100 V
PDISS
0.5 W @ TA = 25 C
TJ
-65 C to +150 C
0.002” ±0.001”
O
O
O
O
O
TSTG
-65 C to +150 C
θJC
50 C/W
0.015”±0.002” SQ.
Anode = Pad
Cathode = Bottom Side
O
CHARACTERISTICS
SYMBOL
O
TA = 25 C
TEST CONDITIONS
MINIMUM
VBR
IR = 10 µA
CJ
VR = 10 V
f = 1.0 MHz
RS
IF = 20 mA
f = 100 MHz
TL
IF = 10 mA
IR = 6.0 mA
trr
IF = 20 mA
VR = 10 V
TYPICAL
MAXIMUM
V
100
1.0
0.10
pF
2.0
Ohms
nS
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
UNITS
10
nS
REV. A
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