1N4386 SILICON MULTIPLIER VARACTOR DIODE PACKAGE STYLE DO- 4 DESCRIPTION: The 1N4396 is a High Power Silicon Multiplier Varactor Diode. MAXIMUM RATINGS IF 200 mA VR 250 V PDISS 20 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 5.0 C/W O O O O O 1 = Anode 2 = Cathode O CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS VBR IR = 10 µA CT VR = 6.0 V f = 1.0 MHz RS VR = 6.0 V f = 50 MHz POUT(X3) PIN = 30 W FIN = 150 MHz MINIMUM TYPICAL MAXIMUM V 250 20 50 0.7 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. UNITS pF Ohms W REV. A 1/1