MITSUBISHI IGBT MITSUBISHI NchNch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES ............................................................................... 900V ● IC ......................................................................................... 60A ● Simple drive ● Integrated Fast-recovery diode ● Small tail loss ● Low VCE Saturation Voltage 4.0 ➁➃ ➀ GATE ➁ COLLECTOR ➂ EMITTER ➃ COLLECTOR ➀ ➂ TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Ratings Unit 900 ±25 V V Peak gate-emitter voltage ±30 V Collector current Collector current (Pulsed) 60 120 A A IE PC Emitter current Maximum power dissipation 40 250 A W Tj Tstg Junction temperature Storage temperature –40 ~ +150 –40 ~ +150 °C °C VCES VGES Collector-emitter voltage Gate-emitter voltage VGEM IC ICM Conditions VGE = 0V Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol (Tj = 25°C) Parameter Test conditions Limits Unit Min. Typ. Max. — — — — 1.0 ±0.5 mA µA 2.0 — 4.0 1.55 6.0 1.95 V V — 11000 — pF — — 180 125 — — pF pF — — 0.05 0.10 — — µs µs — — 0.20 0.30 — — µs µs ICP = 60A, Tj = 125°C, dv/dt = 200V/µs — — 0.6 6 1.0 12 mJ/pls A VCE = 900V, VGE = 0V ICES IGES Collector-emitter leakage current Gate-emitter leakage current VGE (th) VCE (sat) Gate-emitter threshold voltage Collector-emitter saturation voltage Cies Input capacitance Coes Cres Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Turn-on rise time td (off) tf Turn-off delay time Turn-off fall time Etail Itail Tail loss Tail current VEC Emitter-collector voltage IE = 60A, V GE = 0V — — 3.0 V trr Rth (ch-c) Diode reverse recovery time Thermal resistance IE = 60A, dis/dt = –20A/µs — — 0.5 — 2.0 0.5 µs °C/W Rth (ch-c) Thermal resistance — — 4.0 °C/W VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω Junction to case Junction to case Sep. 2000