MITSUBISHI CT90AM-18

MITSUBISHI
IGBT
MITSUBISHI
NchNch
IGBT
CT90AM-18
CT90AM-18
INSULATED
GATE
BIPOLAR
TRANSISTOR
INSULATED
GATE
BIPOLAR
TRANSISTOR
CT90AM-18
OUTLINE DRAWING
Dimensions in mm
5
20MAX.
6
2
φ3.2
2.5
1
26
➃
20.6MIN.
2
1
➀
➁
➂
0.5
3
5.45 5.45
● VCES ............................................................................... 900V
● IC ......................................................................................... 60A
● Simple drive
● Integrated Fast-recovery diode
● Small tail loss
● Low VCE Saturation Voltage
4.0
➁➃
➀ GATE
➁ COLLECTOR
➂ EMITTER
➃ COLLECTOR
➀
➂
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Ratings
Unit
900
±25
V
V
Peak gate-emitter voltage
±30
V
Collector current
Collector current (Pulsed)
60
120
A
A
IE
PC
Emitter current
Maximum power dissipation
40
250
A
W
Tj
Tstg
Junction temperature
Storage temperature
–40 ~ +150
–40 ~ +150
°C
°C
VCES
VGES
Collector-emitter voltage
Gate-emitter voltage
VGEM
IC
ICM
Conditions
VGE = 0V
Sep. 2000
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol
(Tj = 25°C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
—
—
—
—
1.0
±0.5
mA
µA
2.0
—
4.0
1.55
6.0
1.95
V
V
—
11000
—
pF
—
—
180
125
—
—
pF
pF
—
—
0.05
0.10
—
—
µs
µs
—
—
0.20
0.30
—
—
µs
µs
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
—
—
0.6
6
1.0
12
mJ/pls
A
VCE = 900V, VGE = 0V
ICES
IGES
Collector-emitter leakage current
Gate-emitter leakage current
VGE (th)
VCE (sat)
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Cres
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Turn-on rise time
td (off)
tf
Turn-off delay time
Turn-off fall time
Etail
Itail
Tail loss
Tail current
VEC
Emitter-collector voltage
IE = 60A, V GE = 0V
—
—
3.0
V
trr
Rth (ch-c)
Diode reverse recovery time
Thermal resistance
IE = 60A, dis/dt = –20A/µs
—
—
0.5
—
2.0
0.5
µs
°C/W
Rth (ch-c)
Thermal resistance
—
—
4.0
°C/W
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω
Junction to case
Junction to case
Sep. 2000