To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI IGBT MITSUBISHI NchNch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES ............................................................................... 900V ● IC ......................................................................................... 60A ● Simple drive ● Integrated Fast-recovery diode ● Small tail loss ● Low VCE Saturation Voltage 4.0 ➁➃ ➀ GATE ➁ COLLECTOR ➂ EMITTER ➃ COLLECTOR ➀ ➂ TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Ratings Unit 900 ±25 V V Peak gate-emitter voltage ±30 V Collector current Collector current (Pulsed) 60 120 A A IE PC Emitter current Maximum power dissipation 40 250 A W Tj Tstg Junction temperature Storage temperature –40 ~ +150 –40 ~ +150 °C °C VCES VGES Collector-emitter voltage Gate-emitter voltage VGEM IC ICM Conditions VGE = 0V Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol (Tj = 25°C) Parameter Test conditions Limits Unit Min. Typ. Max. — — — — 1.0 ±0.5 mA µA 2.0 — 4.0 1.55 6.0 1.95 V V — 11000 — pF — — 180 125 — — pF pF — — 0.05 0.10 — — µs µs — — 0.20 0.30 — — µs µs ICP = 60A, Tj = 125°C, dv/dt = 200V/µs — — 0.6 6 1.0 12 mJ/pls A VCE = 900V, VGE = 0V ICES IGES Collector-emitter leakage current Gate-emitter leakage current VGE (th) VCE (sat) Gate-emitter threshold voltage Collector-emitter saturation voltage Cies Input capacitance Coes Cres Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Turn-on rise time td (off) tf Turn-off delay time Turn-off fall time Etail Itail Tail loss Tail current VEC Emitter-collector voltage IE = 60A, V GE = 0V — — 3.0 V trr Rth (ch-c) Diode reverse recovery time Thermal resistance IE = 60A, dis/dt = –20A/µs — — 0.5 — 2.0 0.5 µs °C/W Rth (ch-c) Thermal resistance — — 4.0 °C/W VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω Junction to case Junction to case Sep. 2000