RENESAS CT90AM-18

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI
IGBT
MITSUBISHI
NchNch
IGBT
CT90AM-18
CT90AM-18
INSULATED
GATE
BIPOLAR
TRANSISTOR
INSULATED
GATE
BIPOLAR
TRANSISTOR
CT90AM-18
OUTLINE DRAWING
Dimensions in mm
5
20MAX.
6
2
φ3.2
2.5
1
26
➃
20.6MIN.
2
1
➀
➁
➂
0.5
3
5.45 5.45
● VCES ............................................................................... 900V
● IC ......................................................................................... 60A
● Simple drive
● Integrated Fast-recovery diode
● Small tail loss
● Low VCE Saturation Voltage
4.0
➁➃
➀ GATE
➁ COLLECTOR
➂ EMITTER
➃ COLLECTOR
➀
➂
TO-3PL
APPLICATION
Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Ratings
Unit
900
±25
V
V
Peak gate-emitter voltage
±30
V
Collector current
Collector current (Pulsed)
60
120
A
A
IE
PC
Emitter current
Maximum power dissipation
40
250
A
W
Tj
Tstg
Junction temperature
Storage temperature
–40 ~ +150
–40 ~ +150
°C
°C
VCES
VGES
Collector-emitter voltage
Gate-emitter voltage
VGEM
IC
ICM
Conditions
VGE = 0V
Sep. 2000
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol
(Tj = 25°C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
—
—
—
—
1.0
±0.5
mA
µA
2.0
—
4.0
1.55
6.0
1.95
V
V
—
11000
—
pF
—
—
180
125
—
—
pF
pF
—
—
0.05
0.10
—
—
µs
µs
—
—
0.20
0.30
—
—
µs
µs
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
—
—
0.6
6
1.0
12
mJ/pls
A
VCE = 900V, VGE = 0V
ICES
IGES
Collector-emitter leakage current
Gate-emitter leakage current
VGE (th)
VCE (sat)
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Cres
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Turn-on rise time
td (off)
tf
Turn-off delay time
Turn-off fall time
Etail
Itail
Tail loss
Tail current
VEC
Emitter-collector voltage
IE = 60A, V GE = 0V
—
—
3.0
V
trr
Rth (ch-c)
Diode reverse recovery time
Thermal resistance
IE = 60A, dis/dt = –20A/µs
—
—
0.5
—
2.0
0.5
µs
°C/W
Rth (ch-c)
Thermal resistance
—
—
4.0
°C/W
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω
Junction to case
Junction to case
Sep. 2000