MITSUBISHI MITSUBISHI NchNch POWER POWER MOSFET MOSFET FY3ACJ-03F FY3ACJ-03F HIGH-SPEED HIGH-SPEED SWITCHING SWITCHING USE USE FY3ACJ-03F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN 0.4 1.27 ➀ ➄➅ ● 4V DRIVE ● VDSS ................................................................. 30V ● rDS (ON) (MAX) ................................................ 70mΩ ● ID ........................................................................ 3A ● Dual type ➁ ➃ ➆➇ ➂ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VGS = 0V VDS = 0V Ratings Unit 30 ±20 V VDSS VGSS Drain-source voltage Gate-source voltage ID Drain current 3 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH 21 3 A A IS ISM Source current Source current (Pulsed) 1.4 5.6 A A PD Tch Maximum power dissipation Channel temperature Tstg — Storage temperature Weight 1.5 –55~+150 Typical value –55~+150 0.07 W °C °C g Sep. 2001 MITSUBISHI Nch POWER MOSFET FY3ACJ-03F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol (Tch = 25°C) Parameter V (BR)DSS Drain-source breakdown voltage V (BR)GSS Gate-source breakdown voltage Test conditions ID = 1mA, V GS = 0V IG = ±100µA, VDS = 0V VGS = ±20V, VDS = 0V Limits Min. Max. — — — V V — — ±10 0.1 µA mA 1.5 2.0 50 80 70 120 V mΩ 150 260 — 210 — — — — pF pF — — 4.0 6.5 — — ns ns — — 21.0 8.5 0.75 — — — ns ns 1.10 83.3 °C/W 30 ±20 — — IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) rDS (ON) ID = 3A, VGS = 10V 1.0 — VDS (ON) Ciss Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Input capacitance ID = 1.5A, V GS = 4V ID = 3A, VGS = 10V — — Coss Crss Output capacitance Reverse transfer capacitance VDS = 10V, VGS = 0V, f = 1MHz — — — td (on) tr Turn-on delay time td (off) tf VSD Rth (ch-a) Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDS = 30V, VGS = 0V ID = 1mA, V DS = 10V VDD = 15V, ID = 1.5A, VGS = 10V, R GEN = RGS = 50Ω IS = 1.4A, VGS = 0V Channel to ambient Unit Typ. — — — mΩ mV pF V Sep. 2001