MITSUBISHI MITSUBISHI NchNch POWER POWER MOSFET MOSFET FY8AAJ-03F FY8AAJ-03F HIGH-SPEED HIGH-SPEED SWITCHING SWITCHING USE USE FY8AAJ-03F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ● 4V DRIVE ● VDSS ................................................................. 30V ● rDS (ON) (MAX) ................................................ 28mΩ ● ID ........................................................................ 8A ➃ ➀➁➂ ➀ ➁ ➂ SOURCE ➃ GATE ➄ ➅ ➆ ➇ DRAIN SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VGS = 0V VDS = 0V Ratings Unit 30 ±20 V VDSS VGSS Drain-source voltage Gate-source voltage ID Drain current 8 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH 56 8 A A IS ISM Source current Source current (Pulsed) 1.5 6.0 A A PD Tch Maximum power dissipation Channel temperature Tstg — Storage temperature Weight 1.7 –55~+150 Typical value –55~+150 0.07 W °C °C g Sep. 2001 MITSUBISHI Nch POWER MOSFET FY8AAJ-03F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol (Tch = 25°C) Parameter V (BR)DSS Drain-source breakdown voltage V (BR)GSS Gate-source breakdown voltage IDSS IGSS Drain-source leakage current Gate-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) rDS (ON) Drain-source on-state resistance Drain-source on-state resistance rDS (ON) VDS (ON) | yfs | Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Ciss Coss Crss Output capacitance td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Qg Qgs Fall time Total gate charge Gate-source charge Qgd Gate-drain charge VSD Rth (ch-a) Source-drain voltage trr Thermal resistance Reverse recovery time Test conditions ID = 1mA, V GS = 0V IG = ±100µA, VGS = 0V VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V ID = 1mA, V DS = 10V Limits Min. 30 ±20 — — ID = 8A, VGS = 10V 1.0 — ID = 4A, VGS = 4.5V ID = 4A, VGS = 4V — — ID = 8A, VGS = 10V ID = 8A, VDS = 10V — — — VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 4A, VGS = 10V, R G = 50Ω VDD = 15V, VGS = 10V, ID = 8A IS = 1.5A, VGS = 0V Channel to air IS = 1.5A, dis/d t = –50A/µs Unit Typ. — Max. — — — V V — — 0.1 ±10 mA µA 1.5 2.0 22 31 28 43 V mΩ 35 0.176 50 0.224 — 13 600 mΩ mΩ V — S pF — — 200 90 — — pF pF — — 12 — — ns ns — — — — ns 6.5 13.8 1.6 3.5 — 0.75 — 1.10 73.5 — — — — — — — — — 16 30 50 ns nC nC nC V °C/W ns Sep. 2001