Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1260 SOT-89 TRANSISTOR (PNP) FEATURES Power dissipation 0.5 PCM: Collector current -1 ICM: Collector-base voltage -80 V(BR)CBO: 1. BASE W (Tamb=25℃) 2. COLLECTOR A 1 2 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA , IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-60 V , IE=0 -1 µA Emitter cut-off current IEBO VEB=-4 V , -1 µA hFE DC current gain VCE(sat) Collector-emitter saturation voltage IC=0 VCE=-3V, IC= -0.1A 82 IC=-500 mA, IB= -50mA 390 -0.4 V VCE= -5V, IC=- 50mA fT Transition frequency 80 MHz f = 30MHz CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 ZL