Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM : 900 mW (Tamb=25℃) 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100 µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-5 V, IC=0 -1 µA DC current gain hFE(1) VCE=-2 V, IC=-500 A Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1 A, IB=-50 mA -1.2 V fT VCE=-2 V, IC=-500 mA Transition frequency 70 240 100 CLASSIFICATION OF hFE(1) Rank Range O Y 70-140 120-240 MHz