Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SA1357 TRANSISTOR (PNP) TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -8 V Collector cut-off current ICBO VCB=-35V, IE=0 -100 µA Emitter cut-off current IEBO VEB=-8V, IC=0 -100 µA hFE(1) VCE=-2V, IC=-0.5A 100 hFE(2) VCE=-2V, IC=-4A 70 VCE(sat) IC=-4A, IB=-0.1A -1 V Base-emitter voltage VBE VCE=-2V, IC=-4A -1.5 V Transition frequency fT VCE=-2V, IC=-0.5A 170 MHz Cob VCB=-10V, IE=0, f=1MHz 62 pF 320 DC current gain Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range Marking O Y 100-200 160-320