Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608N TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-6V, IC=-1mA 160 hFE(2) VCE=-6V, IC=-0.1mA 70 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT VCE=-6V, IC=-10mA 200 MHz Cob VCB=-6V, IE=0, f=1MHz 3 pF 560 DC current gain Transition frequency Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range Marking F G 160-320 280-560