UTC-IC 2SB562

Transys
Electronics
L I M I T E D
TO-92L Plastic-Encapsulated Transistors
2SB562
TO-92L
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Power dissipation
PCM:
2. COLLECTOR
900
mW (Tamb=25℃)
3. BASE
Collector current
-1
A
ICM:
Collector-base voltage
-25
V
V(BR)CBO:
Operating and storage junction temperature range
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA, IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-1
µA
DC current gain
hFE(1)
VCE=-2V, IC=-0.5A
VCE(sat)
IC=-0.8A, IB=-0.08A
-0.5
V
Base-emitter voltage
VBE
VCE=-2V, IC=-0.5A
-1
V
Transition frequency
fT
VCE=-2V, IC=-0.5A
350
MHz
Cob
VCB=-10V, IE=0, f=1MHz
38
pF
Collector-emitter saturation voltage
Collector output capacitance
85
240
CLASSIFICATION OF hFE(1)
Rank
Range
B
C
85-170
120-240