Transys Electronics L I M I T E D TO-92L Plastic-Encapsulated Transistors 2SB562 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 900 mW (Tamb=25℃) 3. BASE Collector current -1 A ICM: Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE(1) VCE=-2V, IC=-0.5A VCE(sat) IC=-0.8A, IB=-0.08A -0.5 V Base-emitter voltage VBE VCE=-2V, IC=-0.5A -1 V Transition frequency fT VCE=-2V, IC=-0.5A 350 MHz Cob VCB=-10V, IE=0, f=1MHz 38 pF Collector-emitter saturation voltage Collector output capacitance 85 240 CLASSIFICATION OF hFE(1) Rank Range B C 85-170 120-240