IXYS 10N60C5M

Advanced Technical Information
IXKP 10N60C5M
ID25
= 5.4 A
VDSS
= 600 V
RDS(on) max = 0.385 Ω
CoolMOS Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-220 ABFP
G
D
S
G
S
Features
MOSFET
Conditions
VDSS
TVJ = 25°C
Maximum Ratings
VGS
ID25
ID90
TC = 25°C
TC = 90°C
EAS
EAR
single pulse
repetitive
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
Symbol
Conditions
ID = 3.4 A; TC = 25°C
600
V
± 20
V
5.4
3.7
A
A
225
0.3
mJ
mJ
50
V/ns
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
RDSon
VGS = 10 V; ID = 5.2 A
VGS(th)
VDS = VGS; ID = 0.34 mA
IDSS
VDS = 600 V; VGS = 0 V
2.5
TVJ = 25°C
TVJ = 125°C
typ.
max.
350
385
mΩ
3
3.5
V
1
µA
µA
100
nA
tbd
IGSS
VGS = ± 20 V; VDS = 0 V
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A
17
4
6
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 5.2 A; RG = 4.3 Ω
tbd
tbd
tbd
tbd
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
790
38
• Fast CoolMOS power MOSFET - 4th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
• Fully isolated package
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
CoolMOS is a trademark of
Infineon Technologies AG.
pF
pF
22
nC
nC
nC
ns
ns
ns
ns
3.95
K/W
0649
Symbol
1-4
Advanced Technical Information
IXKP 10N60C5M
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
IS
VGS = 0 V
VSD
IF = 5.2 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V
260
21
24
max.
5.2
A
1.2
V
ns
µC
A
Component
Conditions
TVJ
Tstg
operating
Md
mounting torque
Symbol
Conditions
Maximum Ratings
with heatsink compound
thermal resistance junction - ambient
0.4 ... 0.6
Nm
typ.
max.
0.50
80
K/W
K/W
2
g
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
°C
°C
Characteristic Values
min.
RthCH
RthJA
-40...+150
-40...+150
0649
Symbol
2-4
IXKP 10N60C5M
Advanced Technical Information
TO-220 ABFP Outline
ØP
A
E
A1
H
Q
D
L1
A2
L
b1
c
b
e
35
16
25
20 V
TJ = 25°C
8V
10 V
7V
30
VGS =
12
VGS =
7V
10 V
14
20
25
8V
TJ = 150°C
6V
20 V
5.5 V
6V
I D [A ]
I D [A ]
Ptot [ W]
10
15
20
5.5 V
15
10
8
5V
6
10
4.5 V
5V
4
5
5
4.5 V
2
0
0
40
80
120
TC [°C]
Fig. 1 Power dissipation
160
0
0
5
10
V
[V]
Fig. 2 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
DS
15
20
0
5
10
15
20
V DS [V]
Fig. 3 Typ. output characteristics
0649
0
3-4
IXKP 10N60C5M
Advanced Technical Information
1.6
6V
VDS =
40
ID = 5.2 A
VGS = 10 V
7V
5V
5.5 V
VDS > 2·RDS(on) max · ID
36
25 °C
1
32
20 V
TJV = 150°C
1.2
1.2
6.5 V
28
0.8
I D [A ]
[Ω]
DS (on)
[Ω]
0.6
R
0.8
R
DS (on)
24
98 %
20
150 °C
16
TJ =
typ
0.4
12
0.4
8
0.2
4
0
0
0
5
10
15
0
-60
20
-20
20
60
140
180
0
2
Fig. 3 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 4 Drain-source on-state resistance
2
10
VGS = 0 V
f = 1 MHz
8
7
10
3
10
2
Ciss
C [pF ]
[V ]
5
V
GS
I F [A ]
4
400 V
6
4
10
10
VDS =120 V
150 °C, 98%
25 °C
Coss
0
3
25 °C, 98%
2
10
1
10
0
1
10
10
5
9
TJ = 150 °C
8
[V]
GS
Fig. 5 Typ. transfer characteristics
10
1
6
V
ID = 5.2 A pulsed
10
4
T j [°C]
I D [A]
10
100
-1
Crss
0
0
0.5
1
V
SD
1.5
2
0
5
10
[V]
Q
Fig. 6 Forward characteristic
of reverse diode
Fig. 7
15
20
0
50
100
V
gate [nC]
Typ. gate charge
DS
150
200
[V]
Fig. 8 Typ. capacitances
700
250
ID = 3.4 A
ID = 0.25 mA
200
660
620
V
E
AS
B R (DS S )
[m J ]
[V ]
150
100
580
50
0
540
60
100
140
180
-60
-20
20
T j [°C]
Fig. 9 Avalanche energy
100
140
180
Fig. 10 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
60
T j [°C]
0649
20
4-4