IXKH,IXKP 35N60C

IXKH 35N60C5
IXKP 35N60C5
Advanced Technical Information
CoolMOS™ 1) Power MOSFET
ID25
= 35 A
VDSS
= 600 V
RDS(on) max = 0.1 Ω
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-247 AD (IXKH)
G
G
D
q D(TAB)
S
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
Symbol
Conditions
VDSS
TVJ = 25°C
Maximum Ratings
VGS
ID25
ID90
TC = 25°C
TC = 90°C
EAS
EAR
single pulse
repetitive
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
Symbol
Conditions
ID = 11 A; TC = 25°C
600
V
± 20
V
35
25
A
A
800
1.2
mJ
mJ
50
V/ns
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
max.
90
100
3
3.9
V
10
µA
µA
RDSon
VGS = 10 V; ID = 18 A
VGS(th)
VDS = VGS; ID = 1.2 mA
IDSS
VDS = 600 V; VGS = 0 V
IGSS
VGS = ± 20 V; VDS = 0 V
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 18 A
60
14
20
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 18 A; RG = 3.3 Ω
10
5
tbd
5
2.1
TVJ = 25°C
TVJ = 125°C
tbd
100
2800
130
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
mΩ
nA
• fast CoolMOS™ 1) power MOSFET
4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1)
CoolMOS™ is a trademark of
Infineon Technologies AG.
pF
pF
70
ns
ns
ns
ns
ns
ns
ns
0.35
K/W
20080523a
1-4
Advanced Technical Information
IXKH 35N60C5
IXKP 35N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
IS
VGS = 0 V
VSD
IF = 18 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 18 A; -diF/dt = 100 A/µs; VR = 400 V
450
12
70
max.
18
A
1.2
V
ns
µC
A
Component
Symbol
Conditions
TVJ
Tstg
operating
Md
mounting torque
Symbol
Conditions
Maximum Ratings
TO-247
TO-220
with heatsink compound
Weight
TO-247
TO-220
0.8 ... 1.2
0.4 ... 0.6
Nm
Nm
TO-247
TO-220
typ.
max.
0.25
0.50
K/W
K/W
6
2
g
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
°C
°C
Characteristic Values
min.
RthCH
-40...+150
-40...+150
20080523a
2-4
IXKH 35N60C5
IXKP 35N60C5
Advanced Technical Information
TO-247 AD Outline
Symbol
Inches
min
max
0.185
0.209
0.087
0.102
0.059
0.098
0.819
0.845
0.610
0.640
0.170
0.216
0.215 BSC
0.780
0.800
0.177
0.140
0.144
0.212
0.244
0.242 BSC
0.039
0.055
0.065
0.094
0.102
0.135
0.015
0.035
0.515
0.020
0.053
0.530
0.291
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
TO-220 AB Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
D
9.91
3.54
10.66
4.08
0.390 0.420
0.139 0.161
E
F
5.85
2.54
6.85
3.18
0.230 0.270
0.100 0.125
G
H
1.15
2.79
1.65
5.84
0.045 0.065
0.110 0.230
J
K
0.64
2.54
1.01
BSC
0.025 0.040
0.100 BSC
M
N
4.32
1.14
4.82
1.39
0.170 0.190
0.045 0.055
Q
R
0.35
2.29
0.56
2.79
0.014 0.022
0.090 0.110
M
C
B
E
D
F
N
A
H
G
J
Q
K
R
L
120
400
50
10 V
TJ = 25°C
VGS = 20 V
105
Millimeters
min
max
4.70
5.30
2.21
2.59
1.50
2.49
20.79
21.45
15.48
16.24
4.31
5.48
5.46 BSC
19.80
20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
7V
8V
TJ = 150°C
8V
10 V
VGS = 20 V
6V
5.5 V
40
90
300
7V
200
30
60
I D [A ]
I D [A ]
Ptot [ W]
75
6V
5V
20
45
5.5 V
4.5 V
30
100
5V
10
15
4.5 V
0
0
0
40
80
120
TC [°C]
Fig. 1 Power dissipation
160
0
0
5
10
V
[V]
Fig. 2 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
DS
15
20
0
5
10
V
DS
15
20
[V]
Fig. 3 Typ. output characteristics
20080523a
3-4
IXKH 35N60C5
IXKP 35N60C5
Advanced Technical Information
160
0.3
0.5
TJV = 150°C
ID = 18 A
VGS = 10 V
0.25
5.5 V
0.4
VDS > 2·RDS(on) max · ID
25 °C
120
6.5 V
0.2
[Ω]
5V
20 V
DS (on)
0.15
0.2
80
98 %
R
R
DS (on)
[Ω]
7V
VDS =
0.3
I D [A ]
6V
TJ =150 °C
typ
0.1
40
0.1
0.05
0
0
0
0
10
20
30
40
-60
50
-20
20
60
140
0
180
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
2
12
25 °C, 98%
10
10
4
VDS = 120 V
Ciss
1 20 V
8
10
3
10
2
10
1
C [pF ]
6
V
GS
I F [A ]
[V ]
40 0V
0
10
VGS = 0 V
f = 1 MHz
10
1
8
5
ID = 18 A pulsed
TJ =150 °C
6
[V]
GS
Fig. 6 Typ. transfer characteristics
Fig. 5 Drain-source on-state resistance
150 °C, 98%
10
4
V
25 °C
10
2
T j [°C]
I D [A]
10
100
Coss
4
2
Crss
10
-1
10
0
0
0.5
1
V
SD
1.5
2
0
10
20
30
Q
[V]
Fig. 7 Forward characteristic
of reverse diode
Fig. 8
1000
gate
40
50
0
50
100
[nC]
V
Typ. gate charge
DS
150
200
[V]
Fig. 9 Typ. capacitances
700
10
ID = 11 A
0
60
0
ID = 0.25 mA
0.5
750
660
620
V
250
0.2
-1
Z thJ C [ K /W ]
[V ]
B R (DS S )
500
E
AS
[m J ]
10
0.1
D = tp/T
0.05
0.02
10
-2
10
-3
0.01
single pulse
580
0
540
20
60
100
140
T j [°C]
Fig. 10 Avalanche energy
180
-60
-20
20
60
140
180
T j [°C]
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t p [s]
Fig. 12 Max. transient thermal
impedance
20080523a
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