IXKP 10N60C5 CoolMOS™ 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS(on) max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 3.4 A; TC = 25°C 600 V ± 20 V 10 7 A A 225 0.3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 350 385 3 3.5 V 1 µA µA 100 nA RDSon VGS = 10 V; ID = 5.2 A VGS(th) VDS = VGS; ID = 0.34 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A 17 4 6 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 3.3 Ω 10 5 40 5 2.5 TVJ = 25°C TVJ = 125°C RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 10 790 38 mΩ • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 22 ns ns ns ns ns ns ns 1.15 K/W 20090209c 1-4 IXKP 10N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 5.2 A; VGS = 0 V 0.9 trr QRM IRM IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V 260 3.1 24 max. 5.2 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings with heatsink compound 0.4 ... 0.6 Nm typ. max. 0.50 K/W 2 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved °C °C Characteristic Values min. RthCH -55...+150 -55...+150 20090209c 2-4 IXKP 10N60C5 TO-220 AB Outline 16 25 120 20 V TJ = 25°C 100 8V 10 V 7V 14 7V 10 V 20 VGS = 12 VGS = 6V 20 V 5.5 V 6V 80 10 I D [A ] 15 Ptot [ W] 8V TJ = 150°C 60 5.5 V 10 8 5V 6 40 4.5 V 5V 4 4.5 V 2 5 20 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved DS 15 20 0 5 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKP 10N60C5 1.6 6V ID = 5.2 A VGS = 10 V 7V 5V 28 0.8 24 I D [A ] [Ω] DS (on) [Ω] 0.6 R DS (on) R 25 °C 32 20 V 0.8 VDS > 2·RDS(on) max · ID 36 1 5.5 V TJV = 150°C 1.2 40 1.2 6.5 V VDS = 98 % 20 150 °C 16 0.4 TJ = typ 12 0.4 8 0.2 4 0 0 0 5 10 15 0 -60 20 -20 20 60 140 180 0 Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 10 VGS = 0 V f = 1 MHz 7 4 10 3 10 2 Ciss C [pF ] [V ] 5 V GS I F [A ] 10 400 V 6 4 10 Coss 0 3 25 °C, 98% 2 10 1 10 0 1 10 10 VDS =120 V 150 °C, 98% 25 °C 8 5 ID = 5.2 A pulsed 8 TJ = 150 °C 6 [V] GS Fig. 6 Typ. transfer characteristics 10 2 1 4 V Fig. 5 Drain-source on-state resistance 9 10 2 T j [°C] I D [A] 10 100 -1 Crss 0 0 0.5 1 V SD 1.5 2 0 5 10 [V] Q Fig. 7 Forward characteristic of reverse diode Fig. 8 15 0 20 ID = 3.4 A 100 V Typ. gate charge DS 150 200 [V] Fig. 9 Typ. capacitances 700 250 50 gate [nC] 10 1 10 0 ID = 0.25 mA 200 660 620 V 100 0.5 Z thJ C [ K /W ] E AS B R (DS S ) [m J ] [V ] 150 0.2 0.1 D = tp/T 0.05 10 -1 0.02 0.01 580 50 single pulse 0 10 540 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 100 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20090209c 4-4