Data Sheet

IXKC 23N60C5
CoolMOS™ 1) Power MOSFET
ID25
= 23A
VDSS
=600V
RDS(on) max = 0.1Ω
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
ISOPLUS220TM
D
G
G
D
S
S
Preliminary data
E72873

isolated back
surface
Features
MOSFET
Symbol
Conditions
VDSS
TVJ = 25°C
Maximum Ratings
VGS
ID25
ID90
TC = 25°C
TC = 90°C
EAS
EAR
single pulse
repetitive
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
Symbol
Conditions
ID = 11 A; TC = 25°C
600
V
± 20
V
23
16
A
A
800
1.2
mJ
mJ
50
V/ns
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
RDSon
VGS = 10 V; ID = 18 A
VGS(th)
VDS = VGS; ID = 1.2 mA
IDSS
VDS = 600 V; VGS = 0 V
IGSS
VGS = ± 20 V; VDS = 0 V
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
2.5
TVJ = 25°C
VJ = 125°C
T
typ.
max.
90
100
mW
3
3.5
V
5
µA
µA
100
nA
50
2800
130
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 18 A
60
14
20
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 400 V
ID = 18 A; RG = 3.3 Ω
10
5
60
5
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
pF
pF
80
nC
nC
nC
ns
ns
ns
ns
0.85
K/W
•Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
•Fast CoolMOS™ 1) power MOSFET 4th
generation
-high blocking capability
-lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
-low thermal resistance
due to reduced chip thickness
•Enhanced total power density
Applications
•Switched mode power supplies
(SMPS)
•Uninterruptible power supplies (UPS)
•Power factor correction (PFC)
•Welding
•Inductive heating
•PDP and LCD adapter
Advantages
•Easy assembly:
no screws or isolation foils required
•Space savings
•High power density
•High reliability
1)
CoolMOS™ is a trademark of
Infineon Technologies AG.
20100303c
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IXKC 23N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ.
IS
VGS = 0 V
VSD
IF = 16 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V
450
12
70
max.
16
A
1.2
V
ns
µC
A
Component
Symbol
Conditions
TVJ
Tstg
operating
storage
VISOL
RMS leads-to-tab, 50/60 Hz, f = 1 minute
FC
mounting force
Symbol
Conditions
Maximum Ratings
-55...+150
-55...+150
°C
°C
2500
V~
11-65 / 2.4-11
N/lb
Characteristic Values
min.
RthCH
with heatsink compound
typ.
0.28
K/W
3.1
g
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
max.
20100303c
2-4
IXKC 23N60C5
ISOPLUS220TM Outline
A
E
D
T
A
A2
b
b2
b4
c
D
D1
E
E1
e
L
L1
T
L1
* Note 1
2X b4
2
3
2X e
3X b
c
2X b2
A2
120
300
160
MILLIMETERS
MIN
MAX
5.00
4.00
3.00
2.50
0.90
1.30
1.25
1.65
2.35
2.55
1.00
0.70
15.00
16.00
12.00
13.00
10.00
11.00
7.50
8.50
2.55 BASIC
13.00
14.50
3.00
3.50
47.5
42.5
NOTE:
1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3.
2. This drawing will meet dimensional requirement of JEDEC SS
Product Outline TO-273 except D and D1 dimension.
L
1
INCHES
MIN
MAX
.157
.197
.098
.118
.051
.035
.049
.065
.093
.100
.028
.039
.591
.630
.472
.512
.394
.433
.335
.295
.100 BASIC
.512
.571
.138
.118
SYM
VGS = 20 V
105
140
50
10 V
TJ = 25°C
7V
8V
TJ = 150°C
8V
10 V
VGS = 20 V
6V
5.5 V
40
90
120
7V
200
75
80
30
60
I D [A]
I D [A]
P t ot [ W ]
Ptot [ W]
100
6V
20
45
60
100
5.5 V
40
30
20
15
4.5 V
10
5V
0
4.5 V
0
0
0
5V
0
40
40
80
80
120
120 160
160
0
0
5
20
0
5
10
15
20
V DS [V]
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
15
V DS [V]
TC [°C] T C [°C]
Fig. 1 Power dissipation
10
20100303c
3-4
IXKC 23N60C5
0.5
160
0.3
TJV = 150°C
ID = 18 A
VGS = 10 V
0.25
5.5 V
0.4
VDS > 2·RDS(on) max · ID
25 °C
120
6.5 V
0.2
7V
5V
20 V
DS (on)
0.15
0.2
80
98 %
R
R
I D [A ]
[ ]
VDS =
0.3
DS (on)
[ ]
6V
TJ =150 °C
typ
0.1
40
0.1
0.05
0
0
0
0
10
20
30
40
50
-60
-20
20
60
Fig. 4 Typ. drain-source on-state resistance characteristics
0
180
2
10
6
10
4
VDS = 120 V
Ciss
1 20 V
8
10
3
10
2
10
1
C [pF ]
6
V
GS
I F [A ]
[V ]
40 0V
0
10
VGS = 0 V
f = 1 MHz
10
1
8
[V]
GS
5
ID = 18 A pulsed
150 °C, 98%
Coss
4
2
10
4
Fig. 6 Typ. transfer characteristics
12
25 °C, 98%
25 °C
10
2
V
Fig. 5 Drain-source on-state resistance
TJ =150 °C
10
140
T j [°C]
I D [A]
10
100
-1
Crss
10
0
0
0.5
1
V
SD
1.5
2
0
10
20
30
Q
[V]
Fig. 7 Forward characteristic
of reverse diode
gate
40
50
0
0
60
100
V
Fig. 8 Typ. gate charge
1000
50
[nC]
DS
150
200
1000
10000
[V]
Fig. 9 Typ. capacitances
1.0
700
ID = 11 A
ID = 0.25 mA
0.9
0.8
660
0.7
0.6
ZthJH [K/W]
[V ]
B R (DS S )
500
620
V
E
AS
[m J ]
750
0.5
0.4
0.3
250
580
0.2
0.1
0
0.0
540
20
60
100
140
T j [°C]
Fig. 10 Avalanche energy
180
-60
-20
20
60
140
180
T j [°C]
Fig. 11 Drain-source breakdown voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
100
1
10
100
tp [ms]
Fig. 12 Typ. transient thermal impedance with heat transfer paste
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