IXYS VKM60-01P1

VKM 60-01P1
HiPerFETTM Power MOSFET
ID25 = 75 A
VDSS = 100 V
Ω
RDSon = 25 mΩ
H-Bridge Topology in ECO-PAC 2
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr
< 200 ns
L4
L6
A1
K 12
E10
P 18
R 18
NTC
Preliminary data sheet
L9
K 13
F10
X 15
K10
T 18
V 18
X 18
Pin arangement see outlines
Features
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
75
300
75
A
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
300
W
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS; TJ = 25°C
VGS = 0 V;
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t < 300 µs, duty cycle d < 2%
gfs
VDS = 10 V; ID = ID25, pulse test
Ciss
Coss
C rss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 2 Ω, (External)
20
60
80
60
30
110
110
90
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
180
36
85
260
70
160
nC
nC
nC
0.5
K/W
K/W
RthJC
RthCK
with heatsink compound (0.42 K/m.K; 50 µm)
© 2002 IXYS All rights reserved
100
2.0
25
4
V
V
±100
nA
250
1
µA
mA
0.020
Ω
30
S
4500
1600
800
pF
pF
pF
0.25
• HiPerFETTM technology
- low RDSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ECO-PAC 2 package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
Applications
•
•
•
•
drives and power supplies
battery or fuel cell powered
automotive, industrial vehicle etc.
secondary side of mains power
supplies
IXYS reserves the right to change limits,
test conditions and dimensions.
238
MOSFETs
1-4
VKM 60-01P1
Source-Drain Diode
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
75
A
ISM
Repetitive;
300
A
VSD
IF = ID25, VGS = 0 V,
Pulse test, t < 300 µs, duty cycle d < 2%
1.75
V
t rr
IF = 25 A, -di/dt = 100 A/µs, TJ = 25°C
VR = 25 V
TJ = 125°C
200
ns
ns
300
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
Conditions
TVJ
Tstg
VISOL
IISOL ≤ 1 mA; 50/60 Hz; t = 1 s
Md
mounting torque (M4)
a
Max. allowable acceleration
Symbol
Conditions
Maximum Ratings
-40...+150
-40...+125
°C
°C
3600
V~
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
Characteristic Values
max.
Data according to IEC 60747 refer to a single diode or transistor unless otherwise
min.stated
typ.
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
11.2
11.2
mm
mm
24
g
238
dS
dA
2-4
VKM 60-01P1
200
150
VGS = 10V
TJ = 25°C
125
9V
8V
100
7V
50
ID - Amperes
150
75
50
25
6V
5V
0
100
TJ = 125°C
TJ = 25°C
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
1
2
3
VDS - Volts
4
5
6
7
8
9
10
VGS - Volts
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
1,4
2,50
TJ = 25°C
2,25
1,2
VGS = 10V
1,1
1,0
VGS = 15V
RDS(on) - Normalized
1,3
0,9
2,00
1,75
1,50
ID = 37.5A
1,25
1,00
0,75
0,8
0
20
40
60
80
0,50
-50
100 120 140 160
-25
0
ID - Amperes
25
50
75
100 125 150
TJ - Degrees C
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1,2
BV/VG(th) - Normalized
80
60
40
20
VGS(th)
1,1
BVDSS
1,0
0,9
0,8
0,7
0,6
-50
-25
0
25
50
75
100 125 150
TC - Degrees C
Fig. 5 Drain Current vs. Case Temperature
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
0,5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
238
0
3-4
VKM 60-01P1
10
VDS = 50V
ID = 37.5A
IG = 1mA
9
8
1
100
ID - Amperes
7
6
5
GS
10
Limited by RDS(on)
4
3
1m
1
10
10
2
1
0
1
0
25
50
75
100 125 150 175 200
1
10
100
Gate Charge - nCoulombs
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
6000
150
5000
125
IS - Amperes
Ciss
4000
f = 1MHz
VDS = 25V
3000
2000
Coss
100
1000
75
50
TJ = 125°C
TJ = 25°C
0,50
1,00
25
Crss
0
0
5
10
15
0
20
25
0,00
0,25
VDS - Volts
0,75
1,25
1,50
VSD - Volt
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
D=0.5
0,1
D=0.2
D=0.1
D=0.05
0,01 D=0.02
D=0.01
Single pulse
0,001
0,00001
0,0001
0,001
0,01
0,1
1
10
Time - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
238
Fig.11 Transient Thermal Impedance
4-4