VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15 K10 T 18 V 18 X 18 Pin arangement see outlines Features Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 75 300 75 A A A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS; TJ = 25°C VGS = 0 V; TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 300 µs, duty cycle d < 2% gfs VDS = 10 V; ID = ID25, pulse test Ciss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 RG = 2 Ω, (External) 20 60 80 60 30 110 110 90 ns ns ns ns Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 180 36 85 260 70 160 nC nC nC 0.5 K/W K/W RthJC RthCK with heatsink compound (0.42 K/m.K; 50 µm) © 2002 IXYS All rights reserved 100 2.0 25 4 V V ±100 nA 250 1 µA mA 0.020 Ω 30 S 4500 1600 800 pF pF pF 0.25 • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting Applications • • • • drives and power supplies battery or fuel cell powered automotive, industrial vehicle etc. secondary side of mains power supplies IXYS reserves the right to change limits, test conditions and dimensions. 238 MOSFETs 1-4 VKM 60-01P1 Source-Drain Diode Dimensions in mm (1 mm = 0.0394") Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive; 300 A VSD IF = ID25, VGS = 0 V, Pulse test, t < 300 µs, duty cycle d < 2% 1.75 V t rr IF = 25 A, -di/dt = 100 A/µs, TJ = 25°C VR = 25 V TJ = 125°C 200 ns ns 300 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md mounting torque (M4) a Max. allowable acceleration Symbol Conditions Maximum Ratings -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 Characteristic Values max. Data according to IEC 60747 refer to a single diode or transistor unless otherwise min.stated typ. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 11.2 11.2 mm mm 24 g 238 dS dA 2-4 VKM 60-01P1 200 150 VGS = 10V TJ = 25°C 125 9V 8V 100 7V 50 ID - Amperes 150 75 50 25 6V 5V 0 100 TJ = 125°C TJ = 25°C 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0 1 2 3 VDS - Volts 4 5 6 7 8 9 10 VGS - Volts Fig. 1 Output Characteristics Fig. 2 Input Admittance 1,4 2,50 TJ = 25°C 2,25 1,2 VGS = 10V 1,1 1,0 VGS = 15V RDS(on) - Normalized 1,3 0,9 2,00 1,75 1,50 ID = 37.5A 1,25 1,00 0,75 0,8 0 20 40 60 80 0,50 -50 100 120 140 160 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 1,2 BV/VG(th) - Normalized 80 60 40 20 VGS(th) 1,1 BVDSS 1,0 0,9 0,8 0,7 0,6 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Fig. 5 Drain Current vs. Case Temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 0,5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 238 0 3-4 VKM 60-01P1 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 1 100 ID - Amperes 7 6 5 GS 10 Limited by RDS(on) 4 3 1m 1 10 10 2 1 0 1 0 25 50 75 100 125 150 175 200 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 6000 150 5000 125 IS - Amperes Ciss 4000 f = 1MHz VDS = 25V 3000 2000 Coss 100 1000 75 50 TJ = 125°C TJ = 25°C 0,50 1,00 25 Crss 0 0 5 10 15 0 20 25 0,00 0,25 VDS - Volts 0,75 1,25 1,50 VSD - Volt Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage D=0.5 0,1 D=0.2 D=0.1 D=0.05 0,01 D=0.02 D=0.01 Single pulse 0,001 0,00001 0,0001 0,001 0,01 0,1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 238 Fig.11 Transient Thermal Impedance 4-4