MICROSEMI APT60GF60JU2

APT60GF60JU2
ISOTOP® Boost chopper
NPT IGBT
VCES = 600V
IC = 60A @ Tc = 95°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
K
C
Features
•
Non Punch Through (NPT) THUNDERBOLT IGBT ®
•
•
•
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
G
E
K
E
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
C
G
ISOTOP
ILM
IFA V
IFRMS
Parameter
Collector - Emitter Breakdown Voltage
Unit
V
TC = 25°C
Max ratings
600
93
60
360
±20
378
RBSOA clamped Inductive load Current R G=11Ω
TC = 25°C
360
A
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
TC = 80°C
30
39
A
TC = 25°C
TC = 95°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
June, 2006
Symbol
VCES
IC1
IC2
ICM
VGE
PD
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1-8
APT60GF60JU2 – Rev 1
Absolute maximum ratings
APT60GF60JU2
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 60A
Tj = 125°C
VGE = VCE, IC = 500µA
VGE = ±20V, VCE = 0V
Min
3
4
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
VGS = 15V
VBus = 300V
IC = 60A
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 60A
R G = 5Ω
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 60A
R G = 5Ω
Typ
Max
80
2000
2.5
2.8
5
±100
Unit
Typ
3125
310
180
257
19
120
20
95
Max
3590
450
310
410
30
180
40
190
Unit
315
245
26
63
395
68
3.4
25
59
430
65
1.6
470
490
50
125
590
140
7
50
120
650
130
3.2
2.0
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
2.4
4.8
Ets
Total switching Losses
4.0
8.0
V
V
nA
pF
nC
ns
ns
mJ
ns
mJ
June, 2006
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 60A
R G = 5Ω
µA
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2-8
APT60GF60JU2 – Rev 1
Electrical Characteristics
APT60GF60JU2
Chopper diode ratings and characteristics
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
250
500
Tj = 125°C
Characteristic
RthJC
Max
1.8
44
Thermal and package characteristics
Min
Typ
IGBT
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Unit
V
µA
pF
ns
A
nC
ns
nC
A
Max
0.33
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
June, 2006
Symbol
Typ
1.6
1.9
1.4
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3-8
APT60GF60JU2 – Rev 1
Symbol
APT60GF60JU2
www.microsemi.com
4-8
APT60GF60JU2 – Rev 1
June, 2006
Typical IGBT Performance Curve
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5-8
APT60GF60JU2 – Rev 1
June, 2006
APT60GF60JU2
APT60GF60JU2
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6-8
APT60GF60JU2 – Rev 1
June, 2006
Typical Diode Performance Curve
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7-8
APT60GF60JU2 – Rev 1
June, 2006
APT60GF60JU2
APT60GF60JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8-8
APT60GF60JU2 – Rev 1
June, 2006
Dimensions in Millimeters and (Inches)