APT60GF60JU2 ISOTOP® Boost chopper NPT IGBT VCES = 600V IC = 60A @ Tc = 95°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through (NPT) THUNDERBOLT IGBT ® • • • - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration G E K E Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant C G ISOTOP ILM IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Unit V TC = 25°C Max ratings 600 93 60 360 ±20 378 RBSOA clamped Inductive load Current R G=11Ω TC = 25°C 360 A Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 80°C 30 39 A TC = 25°C TC = 95°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation A V W June, 2006 Symbol VCES IC1 IC2 ICM VGE PD These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT60GF60JU2 – Rev 1 Absolute maximum ratings APT60GF60JU2 All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 60A Tj = 125°C VGE = VCE, IC = 500µA VGE = ±20V, VCE = 0V Min 3 4 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGS = 15V VBus = 300V IC = 60A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 60A R G = 5Ω Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω Typ Max 80 2000 2.5 2.8 5 ±100 Unit Typ 3125 310 180 257 19 120 20 95 Max 3590 450 310 410 30 180 40 190 Unit 315 245 26 63 395 68 3.4 25 59 430 65 1.6 470 490 50 125 590 140 7 50 120 650 130 3.2 2.0 Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy 2.4 4.8 Ets Total switching Losses 4.0 8.0 V V nA pF nC ns ns mJ ns mJ June, 2006 Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω µA www.microsemi.com 2-8 APT60GF60JU2 – Rev 1 Electrical Characteristics APT60GF60JU2 Chopper diode ratings and characteristics VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/µs Min Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) 250 500 Tj = 125°C Characteristic RthJC Max 1.8 44 Thermal and package characteristics Min Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Unit V µA pF ns A nC ns nC A Max 0.33 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g June, 2006 Symbol Typ 1.6 1.9 1.4 www.microsemi.com 3-8 APT60GF60JU2 – Rev 1 Symbol APT60GF60JU2 www.microsemi.com 4-8 APT60GF60JU2 – Rev 1 June, 2006 Typical IGBT Performance Curve www.microsemi.com 5-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 APT60GF60JU2 www.microsemi.com 6-8 APT60GF60JU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 7-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 APT60GF60JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8-8 APT60GF60JU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)