APTGT450A60G VCES = 600V IC = 450A @ Tc = 80°C Phase leg Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q1 G1 E1 OUT Q2 G2 E2 0/VBUS VBUS 0/VBUS OUT E1 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant G2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 550 450 600 ±20 1750 Tj = 150°C 900A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W June, 2006 E2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT450A60G – Rev 1 G1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGT450A60G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 450A Tj = 150°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Reverse Recovery Energy 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 450A R G = 1Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 450A R G = 1Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 450A Tj = 25°C R G = 1Ω Tj = 150°C Test Conditions VR=600V IF = 450A VGE = 0V IF = 450A VR = 300V di/dt =4000A/µs Er Min www.microsemi.com 1.4 1.5 5.8 Typ 37 2.3 1.1 130 55 250 Max Unit 500 1.8 µA 6.5 600 V nA Max Unit V nF ns 60 145 60 320 ns 80 2.25 4.2 12.8 15.7 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ Typ mJ mJ Max 200 500 450 1.5 1.4 120 210 20.3 42.8 5.2 10.6 Unit V µA A 1.9 V ns µC June, 2006 Symbol Characteristic mJ 2-5 APTGT450A60G – Rev 1 Electrical Characteristics APTGT450A60G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.085 0.14 Unit °C/W V 175 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT450A60G – Rev 1 June, 2006 SP6 Package outline (dimensions in mm) APTGT450A60G Typical Performance Curve Output Characteristics (V GE=15V) 1000 Output Characteristics 1000 TJ = 150°C T J=25°C 800 800 IC (A) IC (A) TJ=150°C 600 400 VGE =9V 200 T J=25°C 0 0 0.5 1 1.5 V CE (V) 0 2 0 2.5 35 T J=25°C 25 E (mJ) 600 T J=125°C 1.5 2 VCE (V) 3 3.5 Eoff 20 Er 15 Eon 5 TJ=25°C 0 0 5 6 7 8 9 10 0 11 200 400 Switching Energy Losses vs Gate Resistance 30 800 1000 Reverse Bias Safe Operating Area 1000 Eoff V CE = 300V V GE =15V I C = 450A T J = 150°C 600 IC (A) V GE (V) 800 Eon IF (A) E (mJ) 2.5 10 T J=150°C 200 1 VCE = 300V VGE = 15V RG = 1Ω TJ = 150°C 30 800 400 0.5 Energy losses vs Collector Current Transfert Characteristics 1000 IC (A) VGE =15V 600 400 200 20 VGE=13V VGE=19V T J=125°C 600 400 10 Er VGE =15V T J=150°C RG=1Ω 200 Eon 0 0 0 2 4 6 Gate Resistance (ohms) 8 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.06 0.9 0.7 June, 2006 0.08 0.5 0.04 0.02 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT450A60G – Rev 1 Thermal Impedance (°C/W) 0.1 APTGT450A60G Forward Characteristic of diode 1000 100 VCE =300V D=50% RG=1Ω TJ=150°C ZVS ZCS 80 800 Tc =85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 TJ=125°C 400 T J=150°C 200 Hard switching 20 600 T J=25°C 0 0 0 200 400 IC (A) 600 0 800 0.4 0.8 1.2 V F (V) 1.6 2 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.02 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT450A60G – Rev 1 June, 2006 Rectangular Pulse Duration in Seconds