APTGT50TDU60PG Triple Dual Common Source Trench + Field Stop IGBT® Power Module G5 E3 E1 E5 E1/E2 E3/E4 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 C2 E1 E3/E4 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant C5 G3 G1 E1/E2 E3 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A June 2006 G3 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C5 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50TDU60PG – Rev 1, C3 C1 VCES = 600V IC = 50A @ Tc = 80°C APTGT50TDU60PG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VRRM IRM IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit 3150 200 95 110 45 200 40 ns ns 60 0.3 0.43 1.35 1.75 Typ mJ mJ Max 600 VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs www.microsemi.com Unit V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C V pF 120 50 250 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C R G = 8.2Ω Tj = 150°C Test Conditions Typ 1.5 1.7 5.8 VGE = 0V VCE = 25V f = 1MHz Reverse diode ratings and characteristics Symbol Characteristic Min 250 500 50 1.6 1.5 100 150 2.6 5.4 0.6 1.2 µA A 2 V ns June 2006 Symbol Characteristic µC mJ 2-5 APTGT50TDU60PG – Rev 1, Electrical Characteristics APTGT50TDU60PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.85 1.42 Unit °C/W V 175 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-5 APTGT50TDU60PG – Rev 1, June 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT50TDU60PG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 T J=25°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE =9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V R G = 8.2Ω TJ = 150°C 3 TJ =25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 T J=125°C IC (A) IC (A) 80 T J = 150°C T J=125°C Eoff 2 Er 1.5 1 T J=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 VGE (V) Switching Energy Losses vs Gate Resistance 3 VCE = 300V VGE =15V IC = 50A TJ = 150°C 2 80 100 Reverse Bias Safe Operating Area 125 Eoff 100 Eon IC (A) E (mJ) 2.5 60 IC (A) 1.5 75 50 1 Er 0.5 VGE=15V T J=150°C R G=8.2Ω 25 Eon 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 IGBT 0.9 0.7 June 2006 0.8 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT50TDU60PG – Rev 1, Thermal Impedance (°C/W) 1 APTGT50TDU60PG Forward Characteristic of diode 100 V CE =300V D=50% RG=8.2Ω T J=150°C 100 ZVS 80 ZCS 60 80 T c=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 40 60 T J=125°C 40 TJ =150°C 20 Hard switching 20 T J=25°C 0 0 0 20 40 IC (A) 60 80 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50TDU60PG – Rev 1, June 2006 Thermal Impedance (°C/W) 1.6