MICROSEMI APT5010JLLU2

APT5010JLLU2
ISOTOP® Boost chopper
MOSFET Power Module
K
D
G
S
K
S
D
G
VDSS = 500V
RDSon = 100mΩ max @ Tj = 25°C
ID = 41A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant
ISOTOP
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFA V
IFRMS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
Tc = 25°C
Tc = 80°C
Max ratings
500
41
30
164
±30
100
378
41
50
1600
30
39
Unit
V
A
V
mΩ
W
A
June, 2006
Symbol
VDSS
mJ
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www.microsemi.com
1–7
APT5010JLLU2 – Rev 1
Absolute maximum ratings
APT5010JLLU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Eon
Eoff
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Min
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±20 V, VDS = 0V
3
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 41A @ TJ=25°C
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
Max
Unit
µA
mΩ
V
nA
pF
nC
11
15
25
543
843
µJ
593
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
1.6
1.9
1.4
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Max
1.8
250
500
44
www.microsemi.com
µJ
509
Min
Tj = 125°C
ns
3
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
IF = 30A
VR = 400V
di/dt =1000A/µs
Unit
49
Resistive switching @ 25°C
VGS = 15V
VBus = 250V
ID = 41A @ TJ=25°C
R G = 0.6Ω
Inductive Switching @ 25°C
Vbus = 330V, VGS =15V
ID=46A, R G=5Ω
Inductive Switching @ 125°C
Vbus = 330V, VGS =15V
ID=46A, R G=5Ω
Reverse Recovery Time
IRRM
Typ
4360
894
60
96
Max
100
500
100
5
±100
24
Chopper diode ratings and characteristics
Symbol
Typ
Tj = 25°C
Tj = 125°C
Unit
V
µA
pF
ns
A
June, 2006
IDSS
Characteristic
nC
ns
nC
A
2–7
APT5010JLLU2 – Rev 1
Symbol
APT5010JLLU2
Thermal and package characteristics
Symbol
Characteristic
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Min
Typ
MOSFET
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Max
0.33
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
www.microsemi.com
3–7
APT5010JLLU2 – Rev 1
June, 2006
Typical MOSFET Performance Curve
www.microsemi.com
4–7
APT5010JLLU2 – Rev 1
June, 2006
APT5010JLLU2
APT5010JLLU2
www.microsemi.com
5–7
APT5010JLLU2 – Rev 1
June, 2006
Typical Diode Performance Curve
www.microsemi.com
6–7
APT5010JLLU2 – Rev 1
June, 2006
APT5010JLLU2
APT5010JLLU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Cathode
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
7–7
APT5010JLLU2 – Rev 1
June, 2006
Dimensions in Millimeters and (Inches)