APT5010JLLU2 ISOTOP® Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant ISOTOP ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 41 30 164 ±30 100 378 41 50 1600 30 39 Unit V A V mΩ W A June, 2006 Symbol VDSS mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1–7 APT5010JLLU2 – Rev 1 Absolute maximum ratings APT5010JLLU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Eon Eoff Eon Eoff Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 41A @ TJ=25°C VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM Max Unit µA mΩ V nA pF nC 11 15 25 543 843 µJ 593 Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.6 1.9 1.4 Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Max 1.8 250 500 44 www.microsemi.com µJ 509 Min Tj = 125°C ns 3 Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs IF = 30A VR = 400V di/dt =1000A/µs Unit 49 Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C R G = 0.6Ω Inductive Switching @ 25°C Vbus = 330V, VGS =15V ID=46A, R G=5Ω Inductive Switching @ 125°C Vbus = 330V, VGS =15V ID=46A, R G=5Ω Reverse Recovery Time IRRM Typ 4360 894 60 96 Max 100 500 100 5 ±100 24 Chopper diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Unit V µA pF ns A June, 2006 IDSS Characteristic nC ns nC A 2–7 APT5010JLLU2 – Rev 1 Symbol APT5010JLLU2 Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Min Typ MOSFET Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.33 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g www.microsemi.com 3–7 APT5010JLLU2 – Rev 1 June, 2006 Typical MOSFET Performance Curve www.microsemi.com 4–7 APT5010JLLU2 – Rev 1 June, 2006 APT5010JLLU2 APT5010JLLU2 www.microsemi.com 5–7 APT5010JLLU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 6–7 APT5010JLLU2 – Rev 1 June, 2006 APT5010JLLU2 APT5010JLLU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APT5010JLLU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)