2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 FEATURES 5 Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package 6 3 Low On-Resistance 2 Low Gate Threshold Voltage 1 Fast Switching Available in lead-free plating (100% matte tin finish) 6 5 4 1 2 3 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs MARKING CODE: 702 MAXIMUM RATINGS TJ = 25°C Unless otherwise noted Rating Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (Note 1) V DGR 60 V Gate-Source Voltage VGSS 20 V Drain Current ID 115 mA Total Power Dissipation (Note 2) PD 200 mW Operating Junction Temperature Range TJ -55 to 150 °C Storage Temperature Range Tstg -55 to 150 °C Note 1. RGS < 20K ohms THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 2) Symbol Value Units R thja 625 °C/W Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 8/11/2005 Page 1 www.panjit.com 2N7002DW Electrical Characteristics (Each Device) TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 3) Parameter Symbol Min Typ Max Units 60 80 - V TJ=25°C - - 1.0 TJ=125°C - - 500 - - ±10 nA Min Typ Max Units 1.0 1.6 2.0 V VGS= 5V, I D= 0.05A - 1.8 4.5 VGS= 10V, I D= 0.5A - 2.0 7.0 0.5 1.65 - A V DS= 10V, I D = 0.2A 0.08 - - S Conditions Min Typ Max Units - - 50 pF - - 25 pF - - 5.0 pF Min Typ Max Units - - 20 ns - - 20 ns Conditions Drain-Source Breakdown Voltage BVDSS I D = 10µA, VGS= 0V Zero Gate Voltage Drain Current I DSS VDS= 60V, V GS= 0 Gate-Body Leakage I GSS VGS= ±20V, V DS= 0V µA ON CHARACTERISTICS (Note 3) Parameter Symbol Conditions V GS(th) VDS= V GS, I D= 250µA Gate Threshold Voltage Static Drain-Source On-ResistanceR DS(ON) I D(ON) VGS= 10V, V DS= 7.5V On-State Drain Current g FS Forward Transconductance Ohms DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= 25V, VGS= 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol Conditions t D(ON) V =30V, I =0.2A, R =150ohm L DD D RGEN= 25ohm, VGEN = 10V t D(OFF) Note 3. Short duration test pulse used to minimize self-heating 8/11/2005 Page 2 www.panjit.com 2N7002DW Typical Characteristics Curves (Each Device) TJ = 25°C Unless otherwise noted 1.2 5.0V ID - Drain Source Current (A ID - Drain-Source Current (A) 1 0.8 4.0V 0.6 VGS= 6V, 7V, 8V, 9V, 10V 0.4 3.0V 0.2 V DS =10V 1 0.8 0.6 0.4 25oC 0.2 0 0 0 1 2 3 4 0 5 1 Fig. 1. Output Characteristics 4 5 6 Fig. 2. Transfer Characteristics 10 10 RDS(ON) - On-Resistance (Ohms) RDS(ON) - On-Resistance (Ohms) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 8 6 4 V GS = 4.5V 2 V GS=10.0V 0 8 6 4 Ids=500mA 2 Ids=50mA 0 0 0.2 0.4 0.6 0.8 1 2 1.2 4 Fig. 3. On-Resistance vs. Drain Current 10 10 IS - Source Current (A ID =250µA 1.05 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) VGS = 0V 1 25oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 8/11/2005 8 Fig. 4. On-Resistance vs. G-S Voltage 1.1 0.8 -50 6 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) V GS Threshold Voltage (NORMALIZED 2 Page 3 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com 2N7002DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION 2N7002DW T/R7 - 7 inch reel, 3K units per reel 2N7002DW T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/11/2005 Page 4 www.panjit.com