BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage Fast Switching 1 Available in lead-free plating (100% matte tin finish) Drain 3 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs 1 Gate MARKING CODE: 84L MAXIMUM RATINGS 2 Source TJ = 25°C Unless otherwise noted Rating Symbol Value Units Drain-Source Voltage VDSS - 50 V Drain-Gate Voltage (Note 1) V DGR - 50 V Gate-Source Voltage VGSS ± 20 V Drain Current ID 130 mA Total Power Dissipation (Note 2) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Note 1. RGS < 20K ohms THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 2) Symbol Value Units R thja 625 °C/W Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 8/12/2005 Page 1 www.panjit.com BSS84 ELECTRICAL CHARACTERISTICS TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 3) Parameter Symbol Min Typ Max Units -50 - - V VDS= -50V, VGS= 0V, T J=25°C - - -15 V DS= -50V, VGS= 0V, T J=125°C - - -60 V DS= -25V, V GS= 0V, T J=25°C - - -0.1 V GS= ±20V, V DS= 0V - - ±10 nA Conditions Min Typ Max Units V GS(th) VDS= V GS, I D= -1mA -0.8 -1.44 -2.0 V - 3.8 10 Ohms 0.05 - - S Min Typ Max Units - - 45 pF - - 25 pF - - 12 pF Conditions Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V Zero Gate Voltage Drain Current Gate-Body Leakage I DSS I GSS µA ON CHARACTERISTICS (Note 3) Parameter Gate Threshold Voltage Symbol Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units Turn-On Delay Time t D(ON) - 7.5 - ns Turn-Off Delay Time t D(OFF) VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V - 25 - ns Note 3. Short duration test pulse used to minimize self-heating 8/12/2005 Page 2 www.panjit.com BSS84 ELECTRICAL CHARACTERISTIC CURVES TJ = 25°C Unless otherwise noted 1 V GS= 6V, 7V, 8V, 9V, 10V 0.9 -ID - Drain Source Current (A) -ID - Drain-to-Source Current (A) 1 0.8 0.7 5.0V 0.6 0.5 0.4 4.0V 0.3 0.2 3.0V 0.1 0 V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 0 1 Fig. 1. Output Characteristics 4 5 6 7 Fig. 2. Transfer Characteristics 10 RDS(ON) - On-Resistance (Ohms) 10 RDS(ON) - On-Resistance (Ohms) 3 -V GS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 8 V GS = 4.5V 6 4 V GS =10.0V 2 8 6 Ids=-500mA 4 2 Ids=-50mA 0 0 0 0.2 0.4 0.6 0.8 2 1 4 6 8 10 -V GS - Gate-to-Source Voltage (V) -ID - Drain Curre nt (A) Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage 1.2 10 ID =250µA -IS - Source Current (A) V GS Threshold Voltage (NORMALIZED 2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) 1 25oC 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 8/12/2005 VGS = 0V Page 3 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS84 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BSS84 T/R7 - 7 inch reel, 3K units per reel BSS84 T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/12/2005 Page 4 www.panjit.com