KEC 2N7000

SEMICONDUCTOR
2N7000
TECHNICAL DATA
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
INTERFACE AND SWITCHING APPLICATION.
FEATURES
B
C
High density cell design for low RDS(ON).
A
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
N
E
K
G
J
D
)
SYMBOL
RATING
UNIT
H
F
F
VDSS
Gate-Source Voltage
VGSS
60
20
ID
500
IDP
2000
Drain Power Dissipation
PD
625
Junction Temperature
Tj
150
Tstg
-55 150
Continuous
Drain Current
Pulsed(Note 1)
Storage Temperature Range
Note 1) Pulse Width 10
, Duty Cycle
V
V
L
Drain-Source Voltage
1
2
C
CHARACTERISTIC
3
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
MAXIMUM RATING (Ta=25
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. SOURCE
mA
2. GATE
3. DRAIN
mW
TO-92
1%
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10 A
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
-
1
A
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
-
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-
-100
nA
2009. 11. 17
Revision No : 2
1/4
2N7000
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note2)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Vth
Gate Threshold Voltage
RDS(ON)
Drain-Source ON Resistance
VDS(ON)
Drain-Source ON Voltage
ID(ON)
On State Drain Current
MIN.
TYP.
MAX.
UNIT
VDS=VGS, ID=250 A
1.1
1.8
2.3
V
VGS=10V, ID=500mA
-
1.2
1.8
VGS=5V, ID=50mA
-
1.5
2.1
VGS=10V, ID=500mA
-
0.6
0.9
VGS=5V, ID=50mA
-
0.075
0.105
VGS=10V, VDS= 2 VDS(ON)
500
-
-
mA
200
580
-
mS
-
0.78
1.15
V
MIN.
TYP.
MAX.
UNIT
-
47.1
-
-
3.5
-
-
8.8
-
V
Forward Transconductance
gFS
VDS=10V, ID=500mA
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=200mA (Note1)
(Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
Turn-On Time
ton
VDD=30V, RL=155 , ID=190mA,
-
8.8
-
Turn-Off Time
toff
VGS=10V
-
14.8
-
Switching Time
pF
nS
SWITCHING TIME TEST CIRCUIT
V DD
t off
t on
t d(on)
tr
RL
V IN
t d(off)
V OUT
D
OUTPUT, V OUT
tf
90%
90%
10%
10%
INVERTED
V GS
DUT
G
90%
INPUT, V IN
50%
50%
10%
S
2009. 11. 17
Revision No : 2
PULSE WIDTH
2/4
2N7000
I D - V DS
V
10
DRAIN CURRENT ID (A)
COMMON SOURCE
6V
DRAIN SOURCE ON- RESISTANCER
RDS(ON) (Ω)
1.5
R DS(ON) - I D
5V
Ta=25 C
1.2
0.9
4V
0.6
0.3
VGS =3V
0
1
2
3
4
3
4V
2
10V
0
0.3
0.4
0.5
ID - VGS
0.6
0.9
VGS =5V
ID =50mA
1
VGS =10V
ID =500mA
-50
0
COMMON SOURCE
VGS =10V
0.6
125 C
-55 C
0.3
25 C
0.0
50
100
150
0
1
COMMON SOURCE
VDS=VGS
ID =250µA
1.2
1
0.8
-50
0
3
4
5
I S - V SD
V th - T j
1.4
2
GATE-SOURCE VOLTAGE VGS (V)
50
100
JUNCTION TEMPERATURE T j ( C)
Revision No : 2
150
REVERSE DRAIN CURRENT I S (A)
NORMALIZED GATE
SOURCE THRESHOLD VOLTAGE Vth (V)
0.2
R DS(ON) - T j
JUNCTION TEMPERATURE T j ( C)
2009. 11. 17
5V
COMMON SOURCE
Ta=25 C
DRAIN CURRENT I D (A)
3
0.6
-100
6V
1
DRAIN-SOURCE VOLTAGE V DS (V)
4
0
-100
4
0.1
5
2
VGS=3V
5
5
DRAIN CURRENT I D (A)
DRAIN SOURCE ON- RESISTANCE RDS (Ω)
0
6
1
VGS =0
VGS =10
0.1
0.01
0.0
0.3
0.6
0.9
1.2
1.5
BODY DIODE FORWARD VOLTAGE VSD (V)
3/4
2N7000
C - V DS
COMMON SOURCE
VGS=0
f=1MHz
Ta=25 C
Ciss
100
Coss
10
Crss
1
0
5
10
15
20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE C (pF)
1000
VGS - Q g
10
COMMON SOURCE
VGS=30V
ID= 0.3A
Ta =25 C
8
6
4
2
0
25
0
2
DRAIN-SOURCE VOLTAGE V DS (V)
4
10
1
PW =1ms
PW =10ms
PW =100ms
DC
0.001
0.0001
0.001
0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE V DS (V)
2009. 11. 17
Revision No : 2
100
DRAIN POWER DISSIPATION P D (mW)
DRAIN CURRENT I D (A)
PW
0.01
10
P D - Ta
Tj=150 C , Ta=25 C ,Single Pulse
0.1
8
GATE CHARGE Q g (nC)
SOA
10
6
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
4/4