MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 FEATURES 6 3 Electrically Isolated Dual NPN Switching Transistor 2 Lead-Free Plating (100% matte tin finish) 1 6 5 4 1 2 3 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: M2A MAXIMUM RATINGS TJ = 25°C Unless otherwise noted Rating Symbol Value Units Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage Voltage VEB 6.0 V Collector Current IC 600 mA Total Power Dissipation (Note 1) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Units R thja 625 °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 1/2/2006 Page 1 www.panjit.com MMDT2222A ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Parameter Min Typ Max Units Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10mA 40 - - V Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA 75 - - V V (BR)EBO I E = 10uA 6.0 - - V Emitter-Base Breakdown Voltage Symbol Conditions Collector Cutoff Current ICEX VCE= 60V, V EB= 3.0V - - 10 nA Base Cutoff Current IBL V CE= 60V, V EB= 3.0V - - 20 nA I C = 0.1mA, V CE= 10V 35 - - I C = 1.0mA, V CE= 10V 50 - - I C = 10mA, V CE= 10V 75 - - 50 - - I C = 150mA, V CE= 10V 100 - 300 I C = 500mA, V CE= 10V 40 - - I C = 150mA, V CE= 1.0V 35 - - I C = 150mA, I B = 15mA - - 0.3 V I C = 500mA, I B = 50mA - - 1.0 V I C = 150mA, I B = 15mA 0.6 - 1.2 I C = 500mA, I B = 50mA - - 2.0 300 - - MHz DC Current Gain (Note 2) h FE Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) Base-Emitter Saturation Voltage (Note 2) VBE(SAT) Gain-Bandwidth Product fT IC=10mA, VCE=10V, TJ =-55C V CE= 20V, I C= 20mA f = 100MHz - V Collector-Base Capacitance CCBO VCB= 10V, f =1.0MHz - - 8.0 pF Emitter-Base Capacitance CEBO VEB = 0.5V, f =1.0MHz - - 25 pF - - 10 ns - - 25 ns - - 225 ns - - 60 ns Delay Time td Rise Time tr Storage Time ts Fall Time tf VCC = 30V, I C=150mA VBE(off) = -0.5V, IB1= 15mA V CC= 30V, I C=150mA I B1= I B2= 15mA Note 2. Short duration test pulse used to minimize self-heating 1/2/2006 Page 2 www.panjit.com MMDT2222A CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted 350 0.8 TJ = 150° C 300 0.6 250 TJ = 100° C V BE (on) TJ = 25° C 150 TJ = 100° C 0.5 200 hFE TJ = 25° C 0.7 0.4 TJ = 150° C 0.3 100 0.2 VCE = 10V 50 VCE = 10V 0.1 0 0.0 0.1 1 10 100 1000 0.1 1 Collector Current, IC (mA) 100 1000 Collector Current, IC (mA) Fig. 1. hFE vs. Ic Fig. 2. VBE vs. Ic 1.2 500 450 TJ = 150 °C 350 0.8 V BE (sat) (V) IC/IB = 10 300 IC/IB = 10 1.0 400 V CE (sat) (mV) 10 250 200 150 100 TJ = 25 °C 0.6 TJ = 150 °C 0.4 0.2 50 TJ = 100 °C TJ = 25 °C 0 0.0 0.1 1 10 100 1000 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. VCE(sat) vs. Ic Fig. 4. VBE(sat) vs. Ic 1000 100 Capacitance (pF f=1 MHz CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Capacitances 1/2/2006 Page 3 www.panjit.com MMDT2222A PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION MMDT2222A T/R7 - 3,000 units per 7 inch reel MMDT2222A T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 1/2/2006 Page 4 www.panjit.com