BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 FEATURES 5 Complimentary Pairs 6 3 Low On-Resistance 2 Low Gate Threshold Voltage 1 Fast Switching Available in lead-free plating (100% matte tin finish) 6 5 4 APPLICATIONS Q1 Switching Power Supplies Q2 Hand-Held Computers, PDAs MARKING CODE: S82 MAXIMUM RATINGS - TOTAL DEVICE 1 2 3 TJ = 25°C Unless otherwise noted Rating Total Power Dissipation (Note 1) Operating Junction and Storage Temperature Range MAXIMUM RATINGS N - CHANNEL - Q1 , 2N7002 Rating Symbol Value Units PD 200 mW TJ, T stg -55 to +150 °C TJ = 25°C Unless otherwise noted Symbol Value Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS < 1.0Mohm V DGR 60 V Gate-Source Voltage - Continuous VGSS ±20 V Drain Current - Continuous (Note 1) ID 115 mA MAXIMUM RATINGS P - CHANNEL - Q2 , BSS84 Rating Units TJ = 25°C Unless otherwise noted Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS < 20Kohm V DGR -50 V Gate-Source Voltage - Continuous VGSS ±20 V Drain Current - Continuous (Note 1) ID 130 mA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Units R thja 625 °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/15/2005 Page 1 www.panjit.com BSS8402DW Electrical Characteristics - N-CHANNEL - Q1 , 2N7002 TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 2) Parameter Symbol Min Typ Max Units 60 80 - V TJ=25°C - - 1.0 TJ=125°C - - 500 - - ±10 nA Min Typ Max Units 1.0 1.6 2.5 V VGS= 5V, I D= 0.05A - 1.8 4.5 VGS= 10V, I D= 0.5A - 2.0 7.0 0.5 1.65 - A V DS= 10V, I D = 0.2A 0.08 - - S Conditions Min Typ Max Units - - 50 pF - - 25 pF - - 5.0 pF Min Typ Max Units - - 20 ns - - 20 ns Conditions Drain-Source Breakdown Voltage BVDSS I D = 10µA, VGS= 0V Zero Gate Voltage Drain Current I DSS VDS= 60V, V GS= 0 Gate-Body Leakage I GSS VGS= ±20V, V DS= 0V µA ON CHARACTERISTICS (Note 2) Parameter Symbol Conditions V GS(th) VDS= V GS, I D= 250µA Gate Threshold Voltage Static Drain-Source On-ResistanceR DS(ON) I D(ON) VGS= 10V, V DS= 7.5V On-State Drain Current g FS Forward Transconductance Ohms DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= 25V, VGS= 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol Conditions t D(ON) V =30V, I =0.2A, R =150ohm L DD D RGEN= 25ohm, VGEN = 10V t D(OFF) Note 2. Short duration test pulse used to minimize self-heating 9/15/2005 Page 2 www.panjit.com BSS8402DW Electrical Characteristics - P-CHANNEL - Q2 , BSS84 TJ = 25°C Unless otherwise noted OFF CHARACTERISTICS (Note 3) Parameter Symbol Min Typ Max Units -50 - - V VDS= -50V, VGS= 0V, T J=25°C - - -15 V DS= -50V, VGS= 0V, T J=125°C - - -60 V DS= -25V, V GS= 0V, T J=25°C - - -0.1 V GS= ±20V, V DS= 0V - - ±10 nA Conditions Min Typ Max Units V GS(th) VDS= V GS, I D= -1mA -0.8 1.44 -2.0 V - 3.8 10 Ohms 0.05 - - S Min Typ Max Units - - 45 pF - - 25 pF - - 12 pF Conditions Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V I DSS Zero Gate Voltage Drain Current I GSS Gate-Body Leakage µA ON CHARACTERISTICS (Note 3) Parameter Symbol Gate Threshold Voltage Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units Turn-On Delay Time t D(ON) - 7.5 - ns Turn-Off Delay Time t D(OFF) VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V - 25 - ns Note 3. Short duration test pulse used to minimize self-heating 9/15/2005 Page 3 www.panjit.com BSS8402DW Typical Characteristics Curves - N-Channel - Q1 , 2N7002 TJ = 25°C Unless otherwise noted 1.2 5.0V ID - Drain Source Current (A ID - Drain-Source Current (A) 1 0.8 4.0V 0.6 VGS= 6V, 7V, 8V, 9V, 10V 0.4 3.0V 0.2 V DS =10V 1 0.8 0.6 0.4 25oC 0.2 0 0 0 1 2 3 4 0 5 1 Fig. 1. Output Characteristics 4 5 6 Fig. 2. Transfer Characteristics 10 10 RDS(ON) - On-Resistance (Ohms) RDS(ON) - On-Resistance (Ohms) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 8 6 4 V GS = 4.5V 2 V GS=10.0V 0 8 6 4 Ids=500mA 2 Ids=50mA 0 0 0.2 0.4 0.6 0.8 1 2 1.2 4 Fig. 3. On-Resistance vs. Drain Current 10 10 1.05 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A ID =250µA VGS = 0V 1 25oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 8 Fig. 4. On-Resistance vs. G-S Voltage 1.1 0.8 -50 6 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) V GS Threshold Voltage (NORMALIZED 2 Page 4 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW Electrical Characteristic Curves - P-Channel - Q2 , BSS84 TJ = 25°C Unless otherwise noted 1 V GS= 6V, 7V, 8V, 9V, 10V 0.9 -ID - Drain Source Current (A) -ID - Drain-to-Source Current (A) 1 0.8 0.7 5.0V 0.6 0.5 0.4 4.0V 0.3 0.2 3.0V 0.1 0 V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 0 1 Fig. 1. Output Characteristics 4 5 6 7 Fig. 2. Transfer Characteristics 10 RDS(ON) - On-Resistance (Ohms) 10 RDS(ON) - On-Resistance (Ohms) 3 -V GS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 8 V GS = 4.5V 6 4 V GS =10.0V 2 8 6 Ids=-500mA 4 2 Ids=-50mA 0 0 0 0.2 0.4 0.6 0.8 2 1 4 6 8 10 -V GS - Gate-to-Source Voltage (V) -ID - Drain Curre nt (A) Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage 1.2 10 ID =250µA -IS - Source Current (A) V GS Threshold Voltage (NORMALIZED 2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) 1 25oC 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 9/15/2005 VGS = 0V Page 5 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS8402DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/15/2005 Page 6 www.panjit.com