SGM2324 PRODUCT DESCRIPTION The SGM2324 has quad rail-to-rail output voltage feedback amplifiers in one package. It takes the minimum operating supply voltage down to 3V and the maximum recommended supply voltage is 5.5V. SGM2324 is specified over the extended -40°C to +85°C temperature range. The amplifier in SGM2324 provides 1MHz bandwidth; very low input bias currents of 10pA, these features enable SGM2324 to be used for integrators, photodiode amplifiers, and piezoelectric sensors. Rail-to-rail output feature is useful for designers to buffer ASIC in single-supply systems. Applications of SGM2324 include safety monitoring, portable equipment, battery and power supply control, signal conditioning and interfacing for transducers in low power systems. 1MHz, Quad, General Purpose CMOS Operational Amplifier FEATURES • Low Cost • Rail-to-Rail Output 1.7mV Typical VOS • Unity Gain Stable • Gain Bandwidth Product: 1MHz • Very Low Input Bias Currents: 10pA • Input Common-Mode Voltage Range Includes Ground • Operates from 3V to 5.5V • Lead (Pb) Free Packages: SO-16, TSSOP-16, SO-14 and TSSOP-14 PIN CONFIGURATIONS (Top View) The SGM2324 is offered in SO-16, TSSOP-16, TSSOP-14 and SO-14 packages. APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Portable Systems Smoke Detectors Notebook PC PCMCIA Cards Battery–Powered Equipment DSP Interface SG Micro Ltd. Tel: 86/10/51798160/80 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS: VS = +5V (At RL = 100KΩ connected to Vs/2, and VOUT = Vs/2, unless otherwise noted) SGM2324 PARAMETER CONDITIONS TYP MIN/MAX OVER TEMPERATURE +25℃ +25℃ -40℃ to +85℃ UNITS MIN / MAX 10 12 INPUT CHARACTERISTICS Input Offset Voltage (VOS) 1.7 mV MAX Input Bias Current (IB) 10 pA TYP Input Offset Current (IOS) 10 pA TYP Common-Mode Rejection Ratio(CMRR) VS = 5V, VCM = - 0.1V to 3.3V 88 65 50 dB MIN Open-Loop Voltage Gain( AOL) RL = 2KΩ ,Vo = 0.1V to 4.9V 100 85 80 dB MIN RL =10KΩ ,Vo = 0.035V to 4.965V 110 90 85 dB MIN 3.5 µV/℃ TYP RL = 2KΩ 0.8 V TYP RL = 10KΩ 0.008 Input Offset Voltage Drift (∆VOS/∆T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail 43 Output Current (IOUT) POWER V TYP 28 24 mA MIN 3.0 3.0 V MIN 5.5 5.5 V MAX SUPPLY Operating Voltage Range Power Supply Rejection Ratio (PSRR) Vs = +3V to + 5.5V Quiescent Current / Amplifier (IQ) IOUT = 0 VCM = (-VS) + 0.5V 80 75 70 dB MIN 0.65 1.2 1.3 mA MAX 1 MHz TYP DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Slew Rate (SR) G = +1 , 2V Output Step 0.65 V/µs TYP Settling Time to 0.1%( tS) G = +1, 2 V Output Step 9.0 µs TYP Overload Recovery Time VIN ·Gain = Vs 4.0 µs TYP Crosstalk 1kHz -80 dB TYP 1MHz -65 dB TYP f = 1kHz 42.0 nV/ Hz TYP f = 10kHz 38.0 nV/ Hz TYP NOISE PERFORMANCE Voltage Noise Density (en) Specifications subject to changes without notice. 2 SGM2324 PACKAGE/ORDERING INFORMATION MODEL SGM2324 ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION SGM2324YS/TR SO-16 Tape and Reel, 2500 SGM2324YS SGM2324YTS/TR SGM2324YS14/TR SGM2324YTS14/TR TSSOP-16 SO-14 TSSOP-14 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 SGM2324YTS SGM2324YS14 SGM2324YTS14 ABSOLUTE MAXIMUM RATINGS CAUTION Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . . . 6V Storage Temperature Range . . . . . . . . . -65℃ to +150℃ Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 160℃ Operating Temperature Range . . . . . . . . -40℃ to +85℃ Package Thermal Resistance @ TA = 25℃ SO-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82℃/W TSSOP-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 105℃/W Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260℃ ESD Susceptibility HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V MM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V This integrated circuit can be damaged by ESD. SG Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Small-Signal Step Response Large-Signal Step Response G = +1 CL = 100pF RL = 100KΩ 200mV/div 50mV/div G = +1 CL = 100pF RL = 100KΩ 5µs/div 2µs/div Small-Signal Overshoot vs.Load Capacitance Overload Recovery Time 60 2.5V Small-Signal Overshoot(%) Vs = 5V G = -5 VIN = 500mV 0V 500mV G=-5 RFB=100KΩ 50 40 30 20 10 0V 0 Time(2µs/div) 10 On Response vs.Frequency 3 100 1000 Load Capacitance(pF) Maximum Output Voltage vs.Frequency 6 Maximum Output Voltage Without Slew-Rate Induced Distortion 5 Output Voltage(Vp-p) On Response(dB) 0 -3 VS = 5V G = +1 VIN = 0.2VP-P CL=100pF RL = 100kΩ -6 -9 10000 4 3 VS = 5V G = -5 RL = 100kΩ CL=100pF 2 1 0 1 10 100 Frequency(KHz) 1000 10000 1 4 10 100 1000 Frequency(kHz) 10000 SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Input Voltage Noise Spectral Density vs.Frequency CMRR And PSRR vs.Frequency 100 1000 Voltage Noise(nV/ √Hz) 90 80 PSRR CMRR,PSRR(dB) 70 60 50 40 CMRR 30 100 20 10 0 1 10 100 Frequency(kHz) 1000 10 0.01 10000 0.1 Quiescent Current vs.Temperature 1 Frequency(kHz) 10 100 Open-Loop Gain vs.Temperature 1.4 150 Open–Loop Gain(dB) Quiescent Current(mA) 1.2 1 0.8 0.6 0.4 140 RL = 2kΩ 130 120 RL = 10kΩ 110 0.2 100 0 -40 -20 0 20 40 Temperature(℃) 60 -40 80 -20 0 20 40 Temperature(℃) 60 80 CMRR vs.Temperature PSRR vs.Temperature 110 200 105 160 CMRR(dB) PSRR(dB) 100 95 120 80 90 40 85 0 80 -40 -25 -10 5 20 35 50 Temperature(℃) 65 -40 80 5 -25 -10 5 20 35 50 Temperature(℃) 65 80 SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Quiescent And Short-Circuit Current vs.Supply Voltage 100 0.8 80 60 0.6 IQ 0.4 40 ISC 0.2 20 Short-Circuit Current(mA) Quiescent Current(mA) 1 0 0 2.5 3 3.5 4 4.5 Supply Voltage(V) 5 5.5 6 SGM2324 Power-Supply Bypassing and Layout APPLICATION NOTES The SGM2324 operates from a single +3V to +5.5V supply or dual ±1.5V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. Driving Capacitive Loads The SGM2324 can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. VDD VDD 10µF 10µF 0.1µF 0.1µF Vn RISO Vn VOUT ¼ SGM2324 VIN ¼ SGM2324 CL VOUT Vp 10µF Vp Figure 1. Indirectly Driving Heavy Capacitive Load 0.1µF VSS(GND) An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output, CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. VOUT ¼ SGM2324 VSS Figure 3. Amplifier with Bypass Capacitors CF RF RISO VOUT ¼ SGM2324 VIN CL RL Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. 7 SGM2324 Low Pass Active Filter Typical Application Circuits The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. R2 Vn C R2 R1 R1 VIN VOUT ¼ SGM2324 Vp ¼ SGM2324 R3 VOUT R4 R3 = R1 // R2 Vref Figure 4. Differential Amplifier Figure 6. Low Pass Active Filter Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. R2 R1 ¼ SGM2324 Vn VOUT ¼ SGM2324 Vp R3 R4 ¼ SGM2324 Vref Figure 5. Instrumentation Amplifier 8 SGM2324 PACKAGE OUTLINE DIMENSIONS SO-16 D L C E A A1 A2 b c D E E1 e L θ θ A1 A e A2 E1 Symbol Dimensions In Millimeters Min Max Dimensions In Inches Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 9.800 10.20 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 0° 8° 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.386 0.402 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 0° 8° b 9 SGM2324 PACKAGE OUTLINE DIMENSIONS TSSOP-16 A b E E1 Symbol PIN #1 IDENT. A2 A e C θ A L D D E b c E1 A A2 A1 e L H θ Dimensions In Millimeters Min Max 4.900 4.300 0.190 0.090 6.250 5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1° 7° Dimensions In Inches Min Max 0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1° 7° H A1 10 SGM2324 PACKAGE OUTLINE DIMENSIONS SO-14 D L2 L θ1 E E1 θ2 INDEX Φ0.8±0.1 DEP0.2±0.1 h Φ2.0±0.1 BTM E-MARK DEP0.1±0.05 θ h e b 0.25 B B M A3 A1 A2 θ4 0.10 b c BASE METAL b1 WITH PLATING c1 A θ3 L1 R R1 Symbol A A1 A2 A3 b b1 c c1 D E E1 e L L1 L2 R R1 h θ θ1 θ2 θ3 θ4 Dimensions In Millimeters MIN NOM MAX 1.35 0.10 1.25 0.55 0.36 0.35 0.16 0.15 8.53 5.80 3.80 0.45 0.07 0.07 0.30 0° 6° 6° 5° 5° 1.60 0.15 1.45 0.65 0.40 1.75 0.25 1.65 0.75 0.49 0.45 0.25 0.25 8.73 6.20 4.00 0.20 8.63 6.00 3.90 1.27 BSC 0.60 0.80 1.04 REF 0.25 BSC 0.40 8° 8° 7° 7° 0.50 8° 10° 10° 9° 9° SECTION B-B 11 SGM2324 PACKAGE OUTLINE DIMENSIONS TSSOP-14 D R1 MIN NOM MAX A — — 1.20 θ2 A1 0.05 — 0.15 S A2 0.90 1.00 1.05 A3 0.34 0.44 0.54 b 0.20 — 0.28 b1 0.20 0.22 0.24 c 0.10 — 0.19 c1 0.10 0.13 0.15 D 4.86 4.96 5.06 E 6.20 6.40 6.60 E1 4.30 4.40 4.50 R E E1 B L B L2 θ1 L1 +0 INDEX Φ1.0±0.05 0.1-0.1 DEP e b b1 A1 c θ3 e L 0.65 BSC 0.45 L1 SECTION B-B 0.10 12 0.60 0.75 1.00 REF L2 c1 A A2 BASE METAL A3 #1 PIN Dimensions In Millimeters Symbol 0.25 BSC R 0.09 — — R1 0.09 — — S θ1 0.20 — — 0° — 8° θ2 10° 12° 14° θ3 10° 12° 14° SGM2324 REVISION HISTORY Location Page 10/2007— Data Sheet REV.A 02/2008— Data Sheet changed from REV. A to REV. B Added SO-14 and TSSOP-14 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1, 3, 11, 12 SG Micro Ltd. A2608, NO.72 North Road Xisanhuan, Haidian District, Beijing, China 100037 Tel: 86-10-51798160/80 Fax: 86-10-51798180-803 www.sg-micro.com 13 SGM2324