SGMICRO SGM2324YS14

SGM2324
PRODUCT DESCRIPTION
The SGM2324 has quad rail-to-rail output voltage
feedback amplifiers in one package. It takes the minimum
operating supply voltage down to 3V and the maximum
recommended supply voltage is 5.5V. SGM2324 is
specified over the extended -40°C to +85°C temperature
range.
The amplifier in SGM2324 provides 1MHz bandwidth;
very low input bias currents of 10pA, these features
enable SGM2324 to be used for integrators, photodiode
amplifiers, and piezoelectric sensors. Rail-to-rail output
feature is useful for designers to buffer ASIC in
single-supply systems.
Applications of SGM2324 include safety monitoring,
portable equipment, battery and power supply control,
signal conditioning and interfacing for transducers in low
power systems.
1MHz, Quad, General Purpose
CMOS Operational Amplifier
FEATURES
• Low Cost
• Rail-to-Rail Output
1.7mV Typical VOS
• Unity Gain Stable
• Gain Bandwidth Product: 1MHz
• Very Low Input Bias Currents: 10pA
• Input Common-Mode Voltage Range Includes
Ground
• Operates from 3V to 5.5V
• Lead (Pb) Free Packages:
SO-16, TSSOP-16, SO-14 and TSSOP-14
PIN CONFIGURATIONS (Top View)
The SGM2324 is offered in SO-16, TSSOP-16, TSSOP-14
and SO-14 packages.
APPLICATIONS
ASIC Input or Output Amplifier
Sensor Interface
Piezo Electric Transducer Amplifier
Medical Instrumentation
Mobile Communication
Portable Systems
Smoke Detectors
Notebook PC
PCMCIA Cards
Battery–Powered Equipment
DSP Interface
SG Micro Ltd.
Tel: 86/10/51798160/80
www.sg-micro.com
REV. B
ELECTRICAL CHARACTERISTICS: VS = +5V
(At RL = 100KΩ connected to Vs/2, and VOUT = Vs/2, unless otherwise noted)
SGM2324
PARAMETER
CONDITIONS
TYP
MIN/MAX OVER TEMPERATURE
+25℃
+25℃
-40℃ to +85℃
UNITS
MIN / MAX
10
12
INPUT CHARACTERISTICS
Input Offset Voltage (VOS)
1.7
mV
MAX
Input Bias Current (IB)
10
pA
TYP
Input Offset Current (IOS)
10
pA
TYP
Common-Mode Rejection Ratio(CMRR)
VS = 5V, VCM = - 0.1V to 3.3V
88
65
50
dB
MIN
Open-Loop Voltage Gain( AOL)
RL = 2KΩ ,Vo = 0.1V to 4.9V
100
85
80
dB
MIN
RL =10KΩ ,Vo = 0.035V to 4.965V
110
90
85
dB
MIN
3.5
µV/℃
TYP
RL = 2KΩ
0.8
V
TYP
RL = 10KΩ
0.008
Input Offset Voltage Drift (∆VOS/∆T)
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
43
Output Current (IOUT)
POWER
V
TYP
28
24
mA
MIN
3.0
3.0
V
MIN
5.5
5.5
V
MAX
SUPPLY
Operating Voltage Range
Power Supply Rejection Ratio (PSRR)
Vs = +3V to + 5.5V
Quiescent Current / Amplifier (IQ)
IOUT = 0
VCM = (-VS) + 0.5V
80
75
70
dB
MIN
0.65
1.2
1.3
mA
MAX
1
MHz
TYP
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
G = +1 , 2V Output Step
0.65
V/µs
TYP
Settling Time to 0.1%( tS)
G = +1, 2 V Output Step
9.0
µs
TYP
Overload Recovery Time
VIN ·Gain = Vs
4.0
µs
TYP
Crosstalk
1kHz
-80
dB
TYP
1MHz
-65
dB
TYP
f = 1kHz
42.0
nV/
Hz
TYP
f = 10kHz
38.0
nV/
Hz
TYP
NOISE PERFORMANCE
Voltage Noise Density (en)
Specifications subject to changes without notice.
2
SGM2324
PACKAGE/ORDERING INFORMATION
MODEL
SGM2324
ORDER NUMBER
PACKAGE
DESCRIPTION
PACKAGE
OPTION
MARKING
INFORMATION
SGM2324YS/TR
SO-16
Tape and Reel, 2500
SGM2324YS
SGM2324YTS/TR
SGM2324YS14/TR
SGM2324YTS14/TR
TSSOP-16
SO-14
TSSOP-14
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
SGM2324YTS
SGM2324YS14
SGM2324YTS14
ABSOLUTE MAXIMUM RATINGS
CAUTION
Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . . . 6V
Storage Temperature Range . . . . . . . . . -65℃ to +150℃
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 160℃
Operating Temperature Range . . . . . . . . -40℃ to +85℃
Package Thermal Resistance @ TA = 25℃
SO-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82℃/W
TSSOP-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 105℃/W
Lead Temperature Range (Soldering 10 sec)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260℃
ESD Susceptibility
HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
MM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
This integrated circuit can be damaged by ESD. SG
Micro-electronics recommends that all integrated
circuits be handled with appropriate precautions.
Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes could
cause the device not to meet its published
specifications.
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
3
SGM2324
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted.
Small-Signal Step Response
Large-Signal Step Response
G = +1
CL = 100pF
RL = 100KΩ
200mV/div
50mV/div
G = +1
CL = 100pF
RL = 100KΩ
5µs/div
2µs/div
Small-Signal Overshoot vs.Load Capacitance
Overload Recovery Time
60
2.5V
Small-Signal Overshoot(%)
Vs = 5V
G = -5
VIN = 500mV
0V
500mV
G=-5
RFB=100KΩ
50
40
30
20
10
0V
0
Time(2µs/div)
10
On Response vs.Frequency
3
100
1000
Load Capacitance(pF)
Maximum Output Voltage vs.Frequency
6
Maximum Output Voltage
Without Slew-Rate
Induced Distortion
5
Output Voltage(Vp-p)
On Response(dB)
0
-3
VS = 5V
G = +1
VIN = 0.2VP-P
CL=100pF
RL = 100kΩ
-6
-9
10000
4
3
VS = 5V
G = -5
RL = 100kΩ
CL=100pF
2
1
0
1
10
100
Frequency(KHz)
1000
10000
1
4
10
100
1000
Frequency(kHz)
10000
SGM2324
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted.
Input Voltage Noise Spectral Density
vs.Frequency
CMRR And PSRR vs.Frequency
100
1000
Voltage Noise(nV/ √Hz)
90
80
PSRR
CMRR,PSRR(dB)
70
60
50
40
CMRR
30
100
20
10
0
1
10
100
Frequency(kHz)
1000
10
0.01
10000
0.1
Quiescent Current vs.Temperature
1
Frequency(kHz)
10
100
Open-Loop Gain vs.Temperature
1.4
150
Open–Loop Gain(dB)
Quiescent Current(mA)
1.2
1
0.8
0.6
0.4
140
RL = 2kΩ
130
120
RL = 10kΩ
110
0.2
100
0
-40
-20
0
20
40
Temperature(℃)
60
-40
80
-20
0
20
40
Temperature(℃)
60
80
CMRR vs.Temperature
PSRR vs.Temperature
110
200
105
160
CMRR(dB)
PSRR(dB)
100
95
120
80
90
40
85
0
80
-40
-25
-10
5
20
35
50
Temperature(℃)
65
-40
80
5
-25
-10
5
20
35
50
Temperature(℃)
65
80
SGM2324
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted.
Quiescent And Short-Circuit Current
vs.Supply Voltage
100
0.8
80
60
0.6
IQ
0.4
40
ISC
0.2
20
Short-Circuit Current(mA)
Quiescent Current(mA)
1
0
0
2.5
3
3.5
4
4.5
Supply Voltage(V)
5
5.5
6
SGM2324
Power-Supply Bypassing and Layout
APPLICATION NOTES
The SGM2324 operates from a single +3V to +5.5V supply or
dual ±1.5V to ±2.75V supplies. For single-supply operation,
bypass the power supply VDD with a 0.1µF ceramic capacitor
which should be placed close to the VDD pin. For dual-supply
operation, both the VDD and the VSS supplies should be
bypassed to ground with separate 0.1µF ceramic capacitors.
2.2µF tantalum capacitor can be added for better performance.
Driving Capacitive Loads
The SGM2324 can directly drive 250pF in unity-gain without
oscillation. The unity-gain follower (buffer) is the most sensitive
configuration to capacitive loading. Direct capacitive loading
reduces the phase margin of amplifiers and this results in ringing
or even oscillation. Applications that require greater capacitive
drive capability should use an isolation resistor between the
output and the capacitive load like the circuit in Figure 1. The
isolation resistor RISO and the load capacitor CL form a zero to
increase stability. The bigger the RISO resistor value, the more
stable VOUT will be. Note that this method results in a loss of gain
accuracy because RISO forms a voltage divider with the RLOAD.
VDD
VDD
10µF
10µF
0.1µF
0.1µF
Vn
RISO
Vn
VOUT
¼ SGM2324
VIN
¼ SGM2324
CL
VOUT
Vp
10µF
Vp
Figure 1. Indirectly Driving Heavy Capacitive Load
0.1µF
VSS(GND)
An improvement circuit is shown in Figure 2, It provides DC
accuracy as well as AC stability. RF provides the DC accuracy by
connecting the inverting signal with the output, CF and RIso serve
to counteract the loss of phase margin by feeding the high
frequency component of the output signal back to the amplifier’s
inverting input, thereby preserving phase margin in the overall
feedback loop.
VOUT
¼ SGM2324
VSS
Figure 3. Amplifier with Bypass Capacitors
CF
RF
RISO
VOUT
¼ SGM2324
VIN
CL
RL
Figure 2. Indirectly Driving Heavy Capacitive Load with DC
Accuracy
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s gain
or (b) by placing a capacitor in parallel with the feedback resistor
to counteract the parasitic capacitance associated with inverting
node.
7
SGM2324
Low Pass Active Filter
Typical Application Circuits
The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 )
and the –3dB corner frequency is 1/2πR2C. Make sure the filter is
within the bandwidth of the amplifier. The Large values of feedback
resistors can couple with parasitic capacitance and cause undesired
effects such as ringing or oscillation in high-speed amplifiers. Keep
resistors value as low as possible and consistent with output loading
consideration.
Differential Amplifier
The circuit shown in Figure 4 performs the difference function. If
the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then
VOUT = ( Vp – Vn ) × R2 / R1 + Vref.
R2
Vn
C
R2
R1
R1
VIN
VOUT
¼ SGM2324
Vp
¼ SGM2324
R3
VOUT
R4
R3 = R1 // R2
Vref
Figure 4. Differential Amplifier
Figure 6. Low Pass Active Filter
Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in Figure 4
but with the high input impedance.
R2
R1
¼ SGM2324
Vn
VOUT
¼ SGM2324
Vp
R3
R4
¼ SGM2324
Vref
Figure 5. Instrumentation Amplifier
8
SGM2324
PACKAGE OUTLINE DIMENSIONS
SO-16
D
L
C
E
A
A1
A2
b
c
D
E
E1
e
L
θ
θ
A1
A
e
A2
E1
Symbol
Dimensions
In Millimeters
Min
Max
Dimensions
In Inches
Min
Max
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
9.800
10.20
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
0°
8°
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.007
0.010
0.386
0.402
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
0°
8°
b
9
SGM2324
PACKAGE OUTLINE DIMENSIONS
TSSOP-16
A
b
E
E1
Symbol
PIN #1 IDENT.
A2
A
e
C
θ
A
L
D
D
E
b
c
E1
A
A2
A1
e
L
H
θ
Dimensions
In Millimeters
Min
Max
4.900
4.300
0.190
0.090
6.250
5.100
4.500
0.300
0.200
6.550
1.100
0.800
1.000
0.020
0.150
0.65 (BSC)
0.500
0.700
0.25(TYP)
1°
7°
Dimensions
In Inches
Min
Max
0.193
0.169
0.007
0.004
0.246
0.201
0.177
0.012
0.008
0.258
0.043
0.031
0.039
0.001
0.006
0.026 (BSC)
0.020
0.028
0.01(TYP)
1°
7°
H
A1
10
SGM2324
PACKAGE OUTLINE DIMENSIONS
SO-14
D
L2
L
θ1
E
E1
θ2
INDEX Φ0.8±0.1
DEP0.2±0.1
h
Φ2.0±0.1 BTM E-MARK
DEP0.1±0.05
θ
h
e
b
0.25
B B
M
A3
A1
A2
θ4
0.10
b
c
BASE METAL
b1
WITH PLATING
c1
A
θ3
L1
R
R1
Symbol
A
A1
A2
A3
b
b1
c
c1
D
E
E1
e
L
L1
L2
R
R1
h
θ
θ1
θ2
θ3
θ4
Dimensions
In Millimeters
MIN NOM
MAX
1.35
0.10
1.25
0.55
0.36
0.35
0.16
0.15
8.53
5.80
3.80
0.45
0.07
0.07
0.30
0°
6°
6°
5°
5°
1.60
0.15
1.45
0.65
0.40
1.75
0.25
1.65
0.75
0.49
0.45
0.25
0.25
8.73
6.20
4.00
0.20
8.63
6.00
3.90
1.27 BSC
0.60
0.80
1.04 REF
0.25 BSC
0.40
8°
8°
7°
7°
0.50
8°
10°
10°
9°
9°
SECTION B-B
11
SGM2324
PACKAGE OUTLINE DIMENSIONS
TSSOP-14
D
R1
MIN
NOM
MAX
A
—
—
1.20
θ2
A1
0.05
—
0.15
S
A2
0.90
1.00
1.05
A3
0.34
0.44
0.54
b
0.20
—
0.28
b1
0.20
0.22
0.24
c
0.10
—
0.19
c1
0.10
0.13
0.15
D
4.86
4.96
5.06
E
6.20
6.40
6.60
E1
4.30
4.40
4.50
R
E
E1
B
L
B
L2
θ1
L1
+0
INDEX Φ1.0±0.05 0.1-0.1 DEP
e
b
b1
A1
c
θ3
e
L
0.65 BSC
0.45
L1
SECTION B-B
0.10
12
0.60
0.75
1.00 REF
L2
c1
A
A2
BASE
METAL
A3
#1 PIN
Dimensions
In Millimeters
Symbol
0.25 BSC
R
0.09
—
—
R1
0.09
—
—
S
θ1
0.20
—
—
0°
—
8°
θ2
10°
12°
14°
θ3
10°
12°
14°
SGM2324
REVISION HISTORY
Location
Page
10/2007— Data Sheet REV.A
02/2008— Data Sheet changed from REV. A to REV. B
Added SO-14 and TSSOP-14 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1, 3, 11, 12
SG Micro Ltd.
A2608, NO.72 North Road
Xisanhuan, Haidian District,
Beijing, China 100037
Tel: 86-10-51798160/80
Fax: 86-10-51798180-803
www.sg-micro.com
13
SGM2324