DN2625 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Very low gate threshold voltage Design to be source-driven Low switching losses Low effective output capacitance Design for inductive load Well matched for low second harmonic Applications ► ► ► ► ► ► ► ► Medical ultrasound beamforming Ultrasonic array focusing transmitter Piezoelectric transducer waveform drivers High speed arbitrary waveform generator Normally-on switches Solid state relays Constant current sources Power supply circuits Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Switching Waveforms and Test Circuit VDD 0V 90% INPUT -10V 10% t(ON) td(ON) VDD RL PULSE GENERATOR t(OFF) tr td(OFF) OUTPUT RGEN tF D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% Thermal Characteristics Package D-PAK 14-Lead QFN ID (continuous)1 ID (pulsed) (A) (A) 1.1 3.3 Notes: 1. ID (Continuous) is limited by Max. TJ 2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad. RΘjA2 RΘjC O O ( C/W) ( C/W) 50 5.5 45 4.0 IDR1 IDRM (A) (A) 1.1 3.3 DN2625 Ordering Information Package Options Device DN2625 BVDSX/ BVDGX 14-Lead QFN TO-252 (D-PAK) 5x5mm body, 1.0mm height (max), 1.27mm pitch (V) DN2625K4-G DN2625K6-G 250 IDS VGS(OFF) (VGS=0.9V) (max V) (min A) -2.1 3.3 -G indicates package is RoHS compliant (‘Green’) Pin Configurations Drain DRAIN DRAIN 14 GATE Absolute Maximum Ratings 13 DRAIN 12 11 11 GATE SOURCE 2 10 SOURCE SOURCE 3 9 SOURCE Parameter Value Drain-to-source voltage 250V Drain-to-gate voltage 250V TO-252 D-PAK 14-Lead QFN Gate-to-source voltage ±20V (top view) (top view) Operating and storage temperature 8 SOURCE SOURCE 4 5 Gate Source 6 DRAIN DRAIN 7 DRAIN -55OC to +150OC Soldering temperature* 300OC Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging YYWW DN2625 LLLLLLL *Distance of 1.6mm from case for 10 seconds. TO-252 D-PAK L = Lot Number YY = Year Sealed WW = Week Sealed A = Assembler ID C = Country of Origin = “Green” Packaging DN2625 LLLLLL YYWW AAACCC 14-Lead QFN Electrical Characteristics @25OC unless otherwise specified Symbol Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 250 - - V VGS = -2.5V, ID = 50µA BVDGX Drain-to-gate breakdown voltage 250 - - V VGS = -2.5V, ID = 50µA VGS(OFF) Gate-to-source OFF voltage -1.5 - -2.1 V VDS = 15V, ID = 100µA - - 4.5 mV/OC VDS = 15V, ID = 100µA ΔVGS(OFF) Change in VGS(OFF) with temperature 2 Conditions DN2625 Electrical Characteristics (cont) @25OC unless otherwise specified Symbol Min Typ Max Units - - 100 nA VGS = ±20V, VDS = 0V - - 1.0 µA VDS = 250V, VGS = -5.0V - - 200 µA VDS = 250V, VGS = -5.0V, TA = 125OC Saturated drain-to-source current 1.1 - - A VGS = 0V, VDS = 15V IDS(PULSE) Pulsed drain-to-source current 3.1 3.3 - A VGS = 0.9V, VDS = 15V with duty cycle of 1% RDS(ON) Static drain-to-source ON resistance - - 3.5 Ω VGS = 0V, ID = 1.0A Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 200mA 1.0 - - mmho VDS = 10V, ID = 150mA IGSS ID(OFF) IDSS ΔRDS(ON) Parameter Gate body leakage current Drain-to-source leakage current GFS Forward transconductance CISS Input capacitance - 800 1000 COSS Common source output capacitance - 70 210 CRSS Reverse transfer capacitance - 18 70 td(ON) Turn-ON delay time - - 10 Rise time - - 20 Turn-OFF delay time - - 10 Fall time - - 20 Diode forward voltage drop - - 1.8 tr td(OFF) tf VSD Conditions pF VGS = -2.5V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 150mA, RGEN = 3.0Ω, VGS = 0v to -10V V VGS = -2.5V, ISD = 150mA Typical Performance Curves Output Characteristics 7.5 7.0 6.5 6.0 ID (A) 5.5 VGS = 2.0V 5.0 VGS = 1.5V 4.5 VGS = 1.0V 4.0 VGS = 0.5V VGS = 0V 3.5 VGS = -0.5V 3.0 VGS = -1.0V 2.5 VGS = -1.5V 2.0 VGS = -2.0V 1.5 1.0 0.5 0.0 0 50 100 150 VDS (V) 3 200 250 DN2625 Typical Performance Curves (cont.) Saturation Characteristics 5.5 5.0 4.5 4.0 Vgs = -2V Vgs = -1.5V 3.5 ID (A) Vgs = -1V 3.0 Vgs = -0.5V Vgs = 0V 2.5 Vgs = 0.5V Vgs = 1V 2.0 Vgs = 1.5V 1.5 Vgs = 2V 1.0 0.5 0.0 0 1 2 3 4 5 VDS (V) 6 7 8 9 10 Transfer Characteristics 10 9 8 7 ID (A) 6 5 4 3 Temp = -55OC Temp = 25OC 2 Temp = 125OC 1 0 -3.0 -2.0 -1.0 0.0 1.0 VGS (V) 2.0 3.0 4.0 BVDSX Variation With Temperature 1.20 1.15 BVDSX (normalized) 1.10 1.05 VGS = -2.5V ID = 1mA 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 TJ (OC) 4 75 100 125 150 DN2625 Typical Performance Curves (cont.) On-Resistance vs Drain Current 5.0 4.5 4.0 3.0 2.5 2.0 1.5 VGS = 1V 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID (A) 3.5 4.0 4.5 5.0 5.5 Transconductance vs Drain Current 4.0 3.5 VDS = 10V 3.0 Temp = -55OC 2.5 Temp = 25OC Temp = 125OC 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ID (A) 1.25 2.50 1.20 2.25 1.15 2.00 VGS (off) @100µA VDS = 15V 1.10 1.75 1.05 1.50 1.00 1.25 0.95 1.00 RDS(on) @VGS = 1V ID = 1A 0.90 0.75 0.85 0.50 0.80 -50 -25 0 25 50 TJ (OC) 5 75 100 125 0.25 150 RDS (on) (normalized) VGS(OFF) and RDS(ON) Variation With Temperature VGS (off) (normalized) GFS (siemens) RDS (on) (ohms) 3.5 6.0 DN2625 3-Lead TO-252 D-PAK Package Outline (K4) A E1 E c2 4 L3 θ1 D1 H D 1 L4 3 2 b2 Detail B b e Front View Side View Rear View Gauge Plane A1 Seating Plane L2 θ L5 L L1 Detail B Notes: 1. 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol A MIN Dimension (inches) NOM MAX .086 .094 A1 .005 b .025 .035 b2 .030 .045 c2 .018 .035 D .235 D1 .205 .240 .245 - E E1 .250 e .170 - - .265 - JEDEC Registration TO-252, Variation AA, Issue E, June 2004. Drawings not to scale. 6 H .370 .090 BSC .410 L L1 L3 .055 .060 .070 .108 REF .020 BSC L4 L5 θ .035 - .045 0 - - - - .050 .040 .060 θ1 O 0O - O 10 15O DN2625 14-Lead QFN Package Outline (K6) 5x5mm body, 1.0mm height (max), 1.27mm pitch E2 D 14 14 Pin 1 1 Note 1 (Index Area D/2 x E/2) e D2 E Note 1 (Index Area D/2 x E/2) Exposed Pad b e AA BB DD CC Top View Bottom View θ A A3 Seating Plane A1 Side View Notes: 1. Details of Pin 1 identifier are optional, but must be located within the indicated area. The Pin 1 identifier may be either a mold, or a marked feature. Symbol Dimension (mm) A A1 MIN 0.80 0.00 NOM 0.90 0.02 MAX 1.00 0.05 A3 0.20 REF b D D2 E E2 0.46 4.85 4.45 4.85 2.52 0.51 5.00 4.50 5.00 2.57 0.58 5.15 4.55 5.15 2.62 e 1.27 BSC AA BB CC DD θ 0.152 0.473 0.66 0.456 0O 0.252 0.523 0.71 0.506 - 0.352 0.583 0.77 0.566 14O Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN2625 NR070307 7