Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features ►► ►► ►► ►► ►► ►► General Description Very low gate threshold voltage Designed to be source-driven Low switching losses Low effective output capacitance Designed for inductive loads Well matched for low second harmonic when driven by Supertex MD2130 The Supertex DN2625 is a low threshold depletion-mode (normallyon) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► ►► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Medical ultrasound beamforming Ultrasonic array focusing transmitter Piezoelectric transducer waveform drivers High speed arbitrary waveform generator Normally-on switches Solid state relays Constant current sources Power supply circuits Ordering Information The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs. Part Number DN2625K4-G DN2625DK6-G Package Option TO-252 D-PAK 8-Lead DFN Packing 1000/Bag 490/Tray DN2625DK6-G M932 8-Lead DFN 2500/Reel DN2625K6-G* 14-Lead QFN 490/Tray Product Summary BVDSX/BVDGX VGS(OFF) IDS (pulsed) (max) (VGS = 0.9V) (min) -2.1V 3.3A 250V Pin Configuration DRAIN -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. * This package obsolete. For single MOSFETs use the TO-252 D-PAK (K4), for dual MOSFETs use the 8-Lead DFN (K6) (dual pad). SOURCE GATE TO-252 D-PAK Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value S1 1 250V G1 2 S2 3 250V -55OC to +150OC 300OC Distance of 1.6mm from case for 10 seconds. 6 D2 D2 5 D2 14 13 DRAIN 12 11 GATE SOURCE 2 10 SOURCE SOURCE 3 9 SOURCE SOURCE 4 8-Lead DFN (dual pad) DRAIN 1 5 DRAIN 6 DRAIN 7 8 SOURCE DRAIN 14-Lead QFN (top view) (top view) Typical Thermal Resistance Package θja TO-252 D-PAK 81OC/W 8-Lead DFN (dual pad)2 29OC/W 14-Lead QFN2 23OC/W 1 1. 2. Doc.# DSFP-DN2625 C060313 GATE 7 D1 ±20V Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * G2 4 DRAIN 8 D1 D1 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad. 4-layer, 1oz, 3x4inch PCB, with 12-via for drain pad. Supertex inc. www.supertex.com DN2625 TO-252 D-PAK T L = Lot Number YY = Year Sealed WW = Week Sealed A = Assembler ID C = Country of Origin = “Green” Packaging DN2625 LLLLLL YYWW AAACCC O LE Si YYWW DN2625 LLLLLLL L = Lot Number YY = Year Sealed WW = Week Sealed A = Assembler ID C = Country of Origin = “Green” Packaging S D2625D LLLLLL YYWW AAACCC YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging E Packages may or may not include the following marks: Si or O B Product Marking 8-Lead DFN (dual pad) 14-Lead QFN This package is not recommended for new designs. Thermal Characteristics ID Package ID (continuous)1 (pulsed) IDR1 IDRM TO-252 D-PAK 1.1A 3.3A 1.1A 3.3A 8-Lead DFN (dual pad) 1.1A 3.3A 1.1A 3.3A 14-Lead QFN 1.1A 3.3A 1.1A 3.3A Notes: 1. ID (Continuous) is limited by max. Tj. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 250 - - V VGS = -2.5V, ID = 50µA BVDGX Drain-to-gate breakdown voltage 250 - - V VGS = -2.5V, ID = 50µA VGS(OFF) Gate-to-source off voltage -1.5 - -2.1 V VDS = 15V, ID = 100µA Change in VGS(OFF) with temperature - - -4.5 mV/ C VDS = 15V, ID = 100µA Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V - - 1.0 - - 200 Saturated drain-to-source current 1.1 - - A VGS = 0V, VDS = 15V IDS(PULSE) Pulsed drain-to-source current 3.1 3.3 - A VGS = 0.9V, VDS = 15V (with duty cycle of 1%) RDS(ON) Static drain-to-source on-resistance - - 3.5 Ω VGS = 0V, ID = 1.0A ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/ C VGS = 0V, ID = 200mA 100 - - mmho VDS = 10V, ID = 150mA ΔVGS(OFF) IGSS ID(OFF) IDSS Drain-to-source leakage current GFS Forward transconductance CISS Input capacitance - 800 1000 COSS Common source output capacitance - 70 210 CRSS Reverse transfer capacitance - 18 70 td(ON) Turn-on delay time - - 10 Rise time - - 20 Turn-off delay time - - 10 Fall time - - 20 VSD Diode forward voltage drop - - 1.8 QG Total gate charge - - 7.04 QGS Gate-to-source charge - - 0.783 QGD Gate-to-drain charge - - 3.73 tr td(OFF) tf Doc.# DSFP-DN2625 C060313 2 O µA O Conditions VDS = 250V, VGS = -5.0V VDS = 250V, VGS = -5.0V, TA = 125OC pF VGS = -2.5V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 150mA, RGEN = 3.0Ω, VGS = 0v to -10V V VGS = -2.5V, ISD = 150mA nC ID = 3.5A, VDS = 100V, VGS = 1.5V Supertex inc. www.supertex.com DN2625 Switching Waveforms and Test Circuit 0V INPUT -10V VDD 90% Pulse Generator 10% t(ON) t(OFF) VDD tf 90% 0V INPUT 10% 10% OUTPUT OUTPUT RGEN td(OFF) tr td(ON) RL D.U.T. 90% Typical Performance Curves Saturation Characteristics Output Characteristics 5.5 7.0 6.0 VGS = 2.0V 5.0 VGS = 1.5V VGS = 0.5V 4.0 VGS = 0V VGS = -0.5V 3.0 VGS = -1.0V VGS = -1V 4.0 VGS = 0V VGS = -0.5V VGS = 0.5V VGS = 1V VGS = 1.5V 3.0 VGS = 2V 2.5 2.0 VGS = -1.5V VGS = -2.0V 2.0 VGS = -1.5V 4.5 3.5 VGS = 1.0V ID (A) ID (amps) VGS = -2V 5.0 1.5 1.0 1.0 0.5 0.0 0 50 100 150 200 VDS (volts) 0.0 250 0 1 2 3 4 5 VDS (V) 6 7 8 9 10 BVDSX Variation With Temperature Transfer Characteristics 10 -55OC 9 1.20 1.15 ID (amps) 7 BVDSX (normalized) 8 25OC 6 125OC 5 4 3 2 1.05 VGS = -2.5V ID = 1mA 1.00 0.95 0.90 0.85 1 0 1.10 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 0.80 -50 4.0 VGS (V) Doc.# DSFP-DN2625 C060313 -25 0 25 50 75 100 125 150 Tj (OC) 3 Supertex inc. www.supertex.com DN2625 Typical Performance Curves (cont.) Transconductance vs Drain Current On-Resistance vs Drain Current 5.0 4.0 VGS = 1V 4.5 3.5 4.0 GFS (Siemens) RDS(ON) (ohms) -55OC 3.0 3.5 3.0 2.5 2.0 1.5 1.0 2.5 25OC 2.0 1.5 1.0 125OC 0.5 0.5 0.0 VDS = 10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.0 5.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ID (A) ID (A) 1.25 2.50 1.20 2.25 1.15 2.00 1.75 1.10 VGS(OFF) @100µA VDS = 15V 1.05 1.50 1.25 1.00 0.95 1.00 RDS(ON) @VGS = 1V ID =1A 0.90 0.75 0.50 0.85 0.80 RDS(ON) (normalized) VGS(OFF) (normalized) VGS(OFF) and RDS(ON) Variation With Temperature -50 -25 0 25 50 75 100 125 0.25 150 Tj (OC) Doc.# DSFP-DN2625 C060313 4 Supertex inc. www.supertex.com DN2625 3-Lead TO-252 D-PAK Package Outline (K4) b3 E A c2 E1 4 L3 θ1 D1 H D 1 2 3 L4 L5 Note 1 View B b2 b e Front View Side View Rear View Gauge Plane A1 Seating Plane L2 θ L L1 View B Note: 1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol Dimension (inches) MIN A A1 b b2 b3 c2 D D1 E E1 .086 .000* .025 .030 .195 .018 .235 .205 .250 .170 NOM - - - - - - .240 - - - MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .182* e .090 BSC H L .370 .055 - .060 .410 .070 L1 L2 .108 REF .020 BSC L3 L4 L5 θ θ1 .035 .025* .045 0O 0O - - - - - .050 .040 .060 10O 15O JEDEC Registration TO-252, Variation AA, Issue E, June 2004. * This dimension is not specified in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version E041309. Doc.# DSFP-DN2625 C060313 5 Supertex inc. www.supertex.com DN2625 8-Lead DFN Package Outline (K6) 5.00x5.00mm body, 0.90mm height (max), 1.27mm pitch (dual pad) K1 D 8 D2 K1/2 D2 8 E2 E E2 Note 1 Note 1 (Index Area D/2 x E/2) Note 1 (Index Area D/2 x E/2) 1 1 Top View View B Bottom View Note 3 θ A A3 L Seating Plane A1 L1 e b Note 2 View B Side View Notes: 1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or a printed indicator. 2. Depending on the method of manufacturing, a maximum of 0.15mm pullback (L1) may be present. 3. The inner tip of the lead may be either rounded or square. Symbol Dimension (mm) A A1 MIN 0.80 0.00 NOM 0.85 - MAX 0.90 0.05 A3 0.20 REF b D D2 E E2 0.35 4.90 1.93 4.90 1.90 0.40 5.00 2.03 5.00 2.00 0.45 5.10 2.13 5.10 2.10 e 1.27 BSC K1 0.40 REF L L1 θ 0.40 0.00 0O 0.50 - - 0.60 0.15 14O Drawings not to scale Supertex Doc. #: DSPD-8DFNK65x5P127, Version A040209 Doc.# DSFP-DN2625 C060313 6 Supertex inc. www.supertex.com DN2625 14-Lead QFN Package Outline (K6) 5.00x5.00mm body, 1.00mm height (max), 1.27mm pitch E2 E 14 14 Pin 1 1 Note 1 (Index Area D/2 x E/2) e D Note 1 (Index Area D/2 x E/2) D2 Exposed Pad b e AA Top View BB Bottom View CC DD θ A A3 A1 Seating Plane Side View Notes: 1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or a printed indicator. Symbol A A1 MIN Dimension NOM (mm) MAX 0.80 0.00 0.90 0.02 1.00 0.05 A3 0.20 REF b D D2 E E2 0.46 4.85 4.45 4.85 2.52 0.51 5.00 4.50 5.00 2.57 0.58 5.15 4.55 5.15 2.62 e 1.27 BSC AA BB CC DD θ 0.152 0.473 0.66 0.456 0O 0.252 0.523 0.71 0.506 - 0.352 0.583 0.77 0.566 14O Drawings not to scale. Supertex Doc. #: DSPD-14QFNK65X5P127, Version B090808. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-DN2625 C060313 7 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com