DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The Supertex DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications ► ► ► ► ► ► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Normally-on switches Solid state relays Converters Constant current sources Power supply circuits Telecom Product marking for TO-243AA: DN5C where = 2-week alpha date code Ordering Information BVDSX/ BVDGX RDS(ON) (max) (min) 250V 6.0Ω 300mA IDSS Package Options TO-243AA1 DN3525N8 DN3525N8-G -G indicates package is RoHS compliant (‘Green’) Notes: 1Same as SOT-89. Absolute Maximum Ratings Pin Configuration Parameter Value Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V Operating and storage temperature Soldering temperature* D -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. G D TO-243AA (top view) *Distance of 1.6mm from case for 10 seconds. S DN3525 Thermal Characteristics Package ID (continuous)1 ID (pulsed) Power Dissipation @TA = 25OC Θjc (OC/W) Θja (OC/W) IDR1 IDRM TO-243AA 360mA 1.0A 1.6W2 15 782 360mA 1.0A Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@25 C unless otherwise specified) O Symbol Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 250 - - V VGS = -5.0V, ID = 100µA VGS(OFF) Gate-to-source OFF voltage -1.5 - -3.5 V VDS = 15V, ID = 1.0mA Change in VGS(OFF) with temperature - - 4.5 mV/OC VDS = 15V, ID = 1.0mA Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V - - 1.0 µA VDS = Max rating, VGS = -5.0V - - 1.0 mA VDS = 0.8 Max Rating, VGS = -5.0V, TA = 125OC 300 - - mA VGS = 0V, VDS = 15V Static drain-to-source ON-state resistance - - 6.0 Ω VGS = 0V, ID = 200mA Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 200mA 225 - - mmho VDS = 10V, ID = 150mA ΔVGS(OFF) IGSS ID(OFF) Drain-to-source leakage current IDSS Saturated drain-to-source current RDS(ON) ΔRDS(ON) GFS Forward transconductance CISS Input capacitance - 270 350 COSS Common source output capacitance - 20 60 CRSS Reverse transfer capacitance - 5.0 20 td(ON) Turn-ON delay time - - 20 Rise time - - 25 Turn-OFF delay time - - 25 Fall time - - 40 Diode forward voltage drop - - Reverse recovery time - 800 tr td(OFF) tf VSD trr Conditions pF VGS = -5.0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 150mA, RGEN = 25Ω, VGS = 0V to -10V 1.8 V VGS = -5.0V, ISD = 150mA - ns VGS = -5.0V, ISD = 150mA Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 0V 90% INPUT -10V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RGEN D.U.T. 10% INPUT 90% OUTPUT tF OUTPUT 0V RL 90% 2 DN3525 Typical Performance Curves Output Characteristics Saturation Characteristics 1.4 1.4 VGS=+2V 1.2 1.2 VGS = +2V 1.0 0V 1.0 ID (Amperes) ID (Amperes) VGS=0V VGS=-0.5V 0.8 VGS=-0.8V 0.6 0.8 -0.5V 0.6 -0.8V VGS=-1V -1V 0.4 0.4 VGS=-1.5V -1.5V 0.2 0.2 VGS=-2V 0.0 -2V 0.0 0 50 100 150 200 0 250 2 4 VDS (Volts) 6 8 10 VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 1.0 2.0 O T A =-55 C V DS =10V TO-243AA 1.6 O T A =25 C PD (Watts) GFS (Siemens) 0.8 0.6 O T A =125 C 1.2 0.4 0.8 0.2 0.4 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 ID (Milliamperes) TA (OC) Maximum Rated Safe Operating Area Thermal Response Characteristics 150 1.0 10 O Thermal Resistance (normalized) T A =25 C TO-243AA (Pulsed) ID (Amperes) 1.0 TO-243AA (DC) 0.1 0.01 0.001 1 10 100 0.8 0.6 TO-243AA O 0.2 0 0.001 1000 VDS (Volts) TA = 25 C PD = 1.6W 0.4 0.01 0.1 tp (seconds) 3 1 10 DN3525 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSV Variation with Temperature 25 1.2 O TJ = 25 C ID = 100A 20 1.1 RDS(ON) (ohms) BVDSV (Normalized) VGS = -5V 1.0 VGS = 0V 15 10 0.9 5 0 50 100 0 0.0 150 0.2 0.4 VDS = 10V 1.0 1.2 1.3 2.4 1.2 2.2 O VGS(OFF) (normalized) TA = -55 C 1600 ID (Milliamperes) 0.8 VGS(OFF) and RDS(ON) w/ Temperature Transfer Characteristics 2000 O TA = 25 C 1200 O TA = 125 C 800 400 1.1 2.0 VGS(OFF) @ 1mA, 15V 1.0 1.8 0.9 1.6 0.8 1.4 0.7 1.2 RDS(on) @ 0V, 200mA 0.6 1.0 0.5 0.8 0.6 0.4 0 -3 -2 -1 0 1 -50 2 -25 0 25 50 75 100 125 150 VGS (Volts) TJ ( C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics O 3 350 ID = 200mA VGS = -5V 2 300 1 250 VDS=30V VGS (volts) C (picofarads) 0.6 ID (Amperes) TJ ( C) O 200 150 CISS 100 0 -1 -2 -3 50 -4 COSS CRSS -5 0 0 10 20 30 0 40 1000 2000 3000 4000 QG (picocoulombs) VDS (volts) 4 5000 RDS(ON) (normalized) 0.8 -50 DN3525 3-Lead TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 ± 0.10 1.72 ± 0.10 1.50 ± 0.10 0.40 ± 0.05 Exclusion Zone No Vias/Traces in this area. Shape of pad may vary. 4.10 ± 0.15 2.21 ± 0.08 2.45 ± 0.15 1.05 ± 0.15 0.5 ± 0.06 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3525 A012307 5