White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED* 512MB – 64Mx72 DDR2 SDRAM, UNBUFFERED SO-DIMM, w/PLL FEATURES DESCRIPTION Unbuffered 200-pin (SO-DIMM), Small-Outline dual in-line memory module Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 VCC = VCCQ 1.8V ±0.1V The WV3HG64M72EEU is a 64Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of nine 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate. VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Multiple internal device banks for concurrent operation Differential clock inputs (CK, CK#) Programmable CAS# latency (CL): 3, 4, 5* and 6* Posted CAS# additive latency: 0, 1, 2, 3 and 4 Adjustable data-output drive strength On-die termination (ODT) Serial Presence Detect (SPD) with EEPROM Auto & self refresh (64ms: 8,192 cycle refresh) Gold edge contacts Single Rank RoHS compliant JEDEC proposed pin-out Package * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. NOTE: Consult factory for availability of: • Vendor source control options • Industrial temperature option • 200 Pin SO-DIMM: 30.00mm (1.181") TYP. OPERATING FREQUENCIES PC2-3200 PC2-4200 PC2-5300* PC2-6400* Clock Speed 200MHz 266MHz 333MHz 400MHz CL-tRCD-tRP 3-3-3 4-4-4 5-5-5 6-6-6 * Consult factory for availability May 2006 Rev. 2 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 May 2006 Rev. 2 Symbol VREF VSS DQ0 DQ4 VSS DQ5 DQ1 VSS DQS0# DM0 DQS0 VSS VSS DQ6 DQ2 DQ7 DQ3 VSS VSS DQ12 DQ8 DQ13 DQ9 VSS VSS DM1 DQS1# VSS DQS1 DQ14 VSS DQ15 DQ10 VSS DQ11 DQ20 VSS DQ21 DQ16 VSS DQ17 RESET# VSS DM2 DQS2# VSS DQS2 DQ22 VSS DQ23 Pin No. 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 Symbol DQ18 VSS DQ19 DQ28 VSS DQ29 DQ24 VSS DQ25 DM3 VSS VSS DQS3# DQ30 DQS3 DQ31 VSS VSS DQ26 CB4 DQ27 CB5 VSS VSS CB0 DM8 CB1 VSS VSS CB6 DQS8# CB7 DQS8 VSS VSS CB2 CKE0 CB3 NC VSS NC NC VCC NC A12 A11 A9 VCC A7 A8 Pin No. 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 Symbol VCC A6 A5 A4 A3 VCC A2 A1 VCC A0 A10/AP BA1 BA0 VCC RAS# WE# VCC CS0# CAS# ODT0 NC A13 VCC VCC NC CK NC CK# DQ32 VSS VSS DQ36 DQ33 DQ37 DQS4# VSS DQS4 DM4 VSS VSS DQ34 DQ38 DQ35 DQ39 VSS VSS DQ40 DQ44 DQ41 DQ45 PIN NAMES Pin No. 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 Symbol VSS VSS DQS5# DM5 DQS5 VSS VSS DQ46 DQ42 DQ47 DQ43 VSS VSS DQ52 DQ48 DQ53 DQ49 VSS VSS DM6 DQS6# VSS DQS6 DQ54 VSS DQ55 DQ50 VSS DQ51 DQ60 VSS DQ61 DQ56 VSS DQ57 DM7 VSS DQ62 DQS7# VSS DQS7 DQ63 DQ58 SDA VSS SCL DQ59 SA1 VCCSPD SA0 2 Pin Name A0-A13 Function Address Inputs BA0, BA1 DQ0-DQ63 CB0-CB7 DM0-DM8 DQS0-DQS8 DQS0#-DQS8# ODT0 CK, CK# CKE0 CS0# RAS# CAS# WE# VCC RESET# VSS SA0-SA1 SDA VREF VCCSPD SCL NC SDRAM Bank Address Data Input/Output Check Bits Data-in mask Data strobes Data strobes negative On-die termination control Clock Input Clock enable input Chip select input Row Address Strobe Column Address Strobe Write Enable Core Power PLL Output enable Ground SPD address Serial Data Input/Output Input/Output Reference Serial EEPROM power supply SPD Clock Input Spare pins, No connect White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED FUNCTIONAL BLOCK DIAGRAM 3Ω CS0# DQS0 DQS0# DM0 DQS4 DQS4# DM4 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DM1 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS5 DQS5# DM5 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2# DM2 DQS6 DQS6# DM6 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS7 DQS7# DM7 DQS3 DQS3# DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DM/RDQS CS# DQS DQS# I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS8 DQS8# DM8 Serial PD SCL A0 - A13 VCCSPD BA0 - BA1 : DDR2 SDRAMs A0 - A13 : DDR2 SDRAMs RAS# RAS# : DDR2 SDRAMs CAS# CAS# : DDR2 SDRAMs WE# WE# : DDR2 SDRAMs CKE0 CKE : DDR2 SDRAMs ODT0 ODT : DDR2 SDRAMs A1 SA0 SA1 3Ω BA0 - BA1 SDA WP A0 CK0 RESET# SA2 Serial PD VCC DDR2 SDRAMs VREF DDR2 SDRAMs VSS DDR2 SDRAMs 120Ω CK0# A2 120Ω P L L CK: SDRAMs CK#: SDRAMs OE NOTE: All resistor values are 22 ohms ±5% unless otherwise specified. May 2006 Rev. 2 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Units VCC Voltage on VCC pin relative to VSS -1.0 2.3 V VIN, VOUT Voltage on any pin relative to VSS -0.5 2.3 V Storage Temperature -55 100 °C Command/Address, RAS#, CAS#, WE#, -45 45 µA CS#, CKE -45 45 µA CK, CK# -10 10 µA DM -5 5 µA DQ, DQS, DQS# -5 5 µA -18 18 µA TSTG Input leakage current; Any input 0V<VIN<VCC; VREF input 0V,VIN,0.95V; Other pins not under test = 0V IL IOZ IVREF Output leakage current; 0V<VIN<VCC; DQs and ODT are disable VREF leakage current; VREF = Valid VREF level DC OPERATING CONDITIONS All voltages referenced to VSS Parameter Symbol Min Typical Max Unit Notes Supply Voltage VCC 1.7 1.8 1.9 V 3 I/O Reference Voltage VREF 0.49 x VCC 0.50 x VCC 0.51 x VCC V 1 VTT VREF-0.04 VREF VREF+0.04 V 2 VCCSPD 1.7 - 3.6 V I/O Termination Voltage SPD Supply Voltage Notes: 1 VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-1 percent of the DC value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. VCCQ of all IC's are tied to VCC. OPERATING TEMPERATURE CONDITION Parameter Symbol Rating Units Notes Operating Case Temperature (Commercial) TOPER 0 to +85°C °C 1, 2 NOTE: 1. Operation temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDEC JESD51.2 2. At 0 - 85°C, operation temperature range, all DRAM specification will be supported. May 2006 Rev. 2 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED INPUT DC LOGIC LEVEL All voltages referenced to VSS Parameter Input High (Logic 1) Voltage Input High (Logic 0) Voltage Symbol VIH(DC) VIL(DC) Min VREF + 0.125 -0.300 Max VCC + 0.300 VREF - 0.125 Unit V V INPUT AC LOGIC LEVEL All voltages referenced to VSS Parameter AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533 AC Input High (Logic 1) Voltage DDR2-667 AC Input High (Logic 0) Voltage DDR2-400 & DDR2-533 AC Input High (Logic 0) Voltage DDR2-667 Symbol Min Max Unit VIH(AC) VREF + 0.250 - V VIH(AC) VREF + 0.200 - V VIL(AC) - VREF - 0.250 V VIL(AC) - VREF - 0.200 V INPUT/OUTPUT CAPACITANCE TA=25°C, f=100MHz Parameter Input capacitance (A0~A13, BA0~BA1, RAS#, CAS#, WE#) Input capacitance (CKE0), (ODT0) Input capacitance (CS0#) Input capacitance (CK, CK#) Input capacitance (DM0~DM8), (DQS0~DQS8) Input capacitance (DQ0~DQ63), (CB0~CB7) May 2006 Rev. 2 Symbol Min Max Unit CIN1 13 22 pF CIN2 CIN3 CIN4 CIN5 (665) CIN5 (534, 403) COUT1 (665) COUT1 (534, 403) 13 13 6 6.5 6.5 6.5 6.5 22 22 7 7.5 8 7.5 8 pF pF pF pF pF pF pF 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED DDR2 ICC SPECIFICATIONS AND CONDITIONS Includes DDR2 SDRAM components only VCC = +1.8V ± 0.1V Symbol ICC0* ICC1* ICC2P* ICC2Q** ICC2N** ICC3P** ICC3N** ICC4W* ICC4R* ICC5B** ICC6** ICC7* Proposed Conditions 806 665 534 403 Units Operating one bank active-precharge current; tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,065 1, 020 1,020 mA Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD 1,200 1,115 1,155 mA Precharge power-down current; All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 372 372 372 mA Precharge quiet standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 615 570 570 mA Precharge standby current; All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 660 615 615 mA Fast PDN Exit MRS(12) = 0 TBD 570 570 570 mA Slow PDN Exit MRS(12) = 1 TBD 408 408 408 mA Active standby current; All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 795 750 750 mA Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,560 1,380 1,290 mA Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W TBD 1,605 1,425 1,290 mA Burst auto refresh current; tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,650 1,560 1,560 mA Self refresh current; CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING TBD 72 72 72 mA TBD 2,280 2,280 2,280 mA Active power-down current; All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Normal Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are SWITCHING. Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different. *: Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode. **: Value calculated reflects all module ranks in this operating condition. May 2006 Rev. 2 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED AC TIMING PARAMETERS & SPECIFICATIONS AC CHARACTERISTICS 806 PARAMETER SYMBOL tCK (6) tCK (5) tCK (4) tCK (3) MIN MAX TBD TBD TBD TBD TBD TBD TBD CK high-level width tCH CK low-level width Half clock period Clock jitter DQ output access time from CK/CK# Data-out high-impedance window from CK/CK# Data-out low-impedance window from CK/CK# DQ and DM input setup time relative to DQS DQ and DM input hold time relative to DQS DQ and DM input pulse width (for each input) Data hold skew factor DQ…DQS hold, DQS to first DQ to go nonvalid, per access Data valid output window (DVW) DQS input high pulse width DQS input low pulse width DQS output access time from CK/CK# DQS falling edge to CK rising … setup time DQS falling edge from CK rising … hold time DQS…DQ skew, DQS to last DQ valid, per group, per access DQS read preamble DQS read postamble DQS write preamble setup time DQS write preamble DQS write postamble Write command to first DQS latching transition tCL tHP tJIT tAC Data Clock Clock cycle time Data Strobe 665 CL = 6 CL = 5 CL = 4 CL = 3 Address and control input pulse width for each input Address and control input setup time Address and control input hold time Address and control input hold time 534 403 MIN MAX MIN MAX MIN MAX TBD 3,000 3,750 5,000 8,000 8,000 8,000 3,750 5,000 8,000 8,000 5,000 5,000 8,000 8,000 UNIT ps ps ps ps TBD TBD 0.45 0.55 0.45 0.55 0.45 0.55 tCK TBD TBD 0.55 TBD TBD TBD TBD 0.45 MIN(tCH,tCL) -125 -600 0.55 TBD 0.45 MIN(tCH,tCL) -125 -500 0.55 TBD 0.45 MIN(tCH,tCL) -125 -450 125 +600 tCK ps ps ps tHZ TBD TBD tAC(MAX) ps tLZ TBD TBD tAC(MIN) tAC(MAX) ps tDS TBD TBD 100 100 150 tDH TBD TBD 225 225 275 tDIPW TBD TBD 0.35 0.35 0.35 tQHS TBD TBD tQH TBD TBD tHP - tQHS tHP - tQHS tHP - tQHS ps tDVW tDQSH tDQSL tDQSCK tDSS TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD tQH - tDQSQ 0.35 0.35 -400 0.2 tQH - tDQSQ 0.35 0.35 -450 0.2 tQH - tDQSQ 0.35 0.35 -500 0.2 ns tCK tCK ps tCK tDSH TBD TBD 0.2 tDQSQ TBD TBD tRPRE tRPST TBD TBD TBD TBD tWPRES tWPRE tWPST TBD TBD TBD TBD TBD TBD tDQSS TBD TBD tIPW TBD TBD 0.6 0.6 0.6 tCK tIS tIH TBD TBD TBD TBD tCCD TBD TBD 200 275 2 250 375 2 250 475 2 ps ps tCK 125 +450 tAC(MAX) tAC(MAX) tAC(MAX) tAC(MIN) 340 +400 tAC(MAX) +450 0.2 1.1 0.6 0.6 WL+ 0.25 tAC(MIN) 400 240 0.9 0.4 0 0.35 0.4 WL0.25 125 +500 450 +500 0.2 300 0.9 0.4 0 0.35 0.4 WL0.25 tCK 1.1 0.6 0.6 WL+ 0.25 0.9 0.4 0 0.35 0.4 WL0.25 ps tCK 350 ps 1.1 0.6 tCK tCK ps tCK tCK 0.6 WL+ 0.25 tCK * AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different. Continued on next page May 2006 Rev. 2 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED AC TIMING PARAMETERS (cont'd) AC CHARACTERISTICS Command and Address PARAMETER ACTIVE to ACTIVE (same bank) command ACTIVE bank a to ACTIVE bank b command ACTIVE to READ or WRITE delay Four Bank Activate period ACTIVE to PRECHARGE command Internal READ to precharge command delay Write recovery time Auto precharge write recovery + precharge time Internal WRITE to READ command delay PRECHARGE command period PRECHARGE ALL command period LOAD MODE command cycle time CKE low to CK,CK# uncertainty Self Refresh REFRESH to Active of Refresh to Refresh command interfal ODT 665 534 MIN MAX MIN tRC tRRD tRCD tFAW tRAS tRTP tWR TBD TBD TBD TBD TBD TBD TBD TBD 55 7.5 15 37.5 45 7.5 15 tDAL TBD TBD tWR+tRP tWR+tRP tWR+tRP ns tWTR tRP tRPA tMRD TBD TBD TBD TBD TBD TBD TBD TBD 10 15 tRP+tCK 2 7.5 15 tRP+tCK 2 7.5 15 tRP+tCK 2 ns ns ns tCK tDELAY TBD TBD 4.375 4.375 4.375 ns tRFC TBD TBD 105 TBD TBD Average periodic refresh interval tREFI tXSNR TBD TBD TBD TBD TBD TBD MAX 37.5 70,000 70,000 MIN 403 SYMBOL Exit self refresh to non-READ command 60 7.5 15 37.5 45 7.5 15 105 7.8 MAX 37.5 70,000 70,000 MIN 35 7.5 15 37.5 45 7.5 15 105 7.8 tRFC(MIN) +10 200 tRFC(MIN) +10 200 tIS tIS MAX 37.5 70,000 UNIT ns ns ns ns ns ns ns 70,000 ns 7.8 µs Exit self refresh to READ command tXSRD TBD TBD tRFC(MIN) +10 200 Exit self refresh timing reference tISXR TBD TBD tIS ODT turn-on delay tAOND TBD TBD 2 2 2 2 2 2 tCK ODT turn-on tAON TBD TBD tAC(MIN) tAC(MAX) +1000 tAC(MIN) tAC(MAX) +1000 tAC(MIN) tAC(MAX) +1000 ps ODT turn-off delay tAOFD TBD TBD 2.5 2.5 2.5 2.5 2.5 2.5 tCK tAC(MAX) +600 2 x tCK+ tAC(MIN) +1000 2.5 x tCK+ tAC(MIN) +1000 tAC(MIN) tAC(MAX) +600 2 x tCK+ tAC(MIN) +1000 2.5 x tCK+ tAC(MIN) +1000 tAC(MIN) tAC(MAX) +600 2 x tCK+ tAC(MIN) +1000 2.5 x tCK+ tAC(MIN) +1000 ps ODT turn-off Power-Down 806 TBD TBD tAOF TBD TBD tAC(MIN) ODT turn-on (power-down mode) tAONPD TBD TBD tAC(MIN) +2000 ODT turn-off (power-down mode) tAOFPD TBD TBD tAC(MIN) +2000 tAC(MIN) +2000 tAC(MIN) +2000 tAC(MIN) +2000 tAC(MIN) +2000 ns tCK ps ps ps ODT to power-down entry latency tANPD TBD TBD 3 3 3 tCK ODT power-down exit latency tAXPD TBD TBD 8 8 8 tCK Exit active power-down to READ command, MR[bit12=0] Exit active power-down to READ command, MR[bit12=1] A Exit precharge power-down to any nonREAD command. tXARD TBD TBD 2 2 2 tCK tXARDS TBD TBD 7-AL 6-AL 6-AL tCK tXP TBD TBD 2 2 2 tCK tCKE TBD TBD 3 3 3 tCK CKE minimum high/low time * AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different. May 2006 Rev. 2 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED ORDERING INFORMATION FOR PD4 Part Number Speed/Data Rate Frequency CAS Latency tRCD tRP Height* WV3HG64M72EEU806PD4xxG** 400MHz/800Mb/s 6 6 6 30.00mm (1.181") TYP WV3HG64M72EEU665PD4xxG** 333MHz/667Mb/s 5 5 5 30.00mm (1.181") TYP WV3HG64M72EEU534PD4xxG 266MHz/533Mb/s 4 4 4 30.00mm (1.181") TYP WV3HG64M72EEU403PD4xxG 200MHz/400Mb/s 3 3 3 30.00mm (1.181") TYP ** Consult factory for availability NOTES: • RoHS compliant product (G = RoHS Compliant) • Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) • Consult factory for availability of industrial temperature (-40°C to 85°C) option PACKAGE DIMENSIONS FOR PD4 FRONT VIEW 3.302 (0.130) MAX 67.75 (2.667) 67.45 (2.656) 4.10(0.161) (2X) 3.90(0.154) 30.15 (1.187) 29.85 (1.175) 1.80 (0.071) (2X) 20.00 (0.787) TYP 6.00 (0.236) 2.55 (0.100) 2.15 (0.085) 1.00 (0.039) TYP PIN 1 0.45 (0.018) TYP 1.10 (0.043) 0.90 (0.035) 0.60 (0.024) TYP PIN 199 63.60 (2.504) TYP BACK VIEW PIN 200 4.2 (0.165) TYP PIN 2 47.40 (1.866) TYP 11.40 (0.449) TYP * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) Tolerances: ±0.13 (0.005) unless otherwise specified May 2006 Rev. 2 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED PART NUMBERING GUIDE WV 3 H G 64M 72 E E U xxx PD4 x x G WEDC MEMORY (SDRAM) DDR 2 GOLD DEPTH BUS WIDTH COMPONENT WIDTH x8 1.8V UNBUFFERED SPEED (Mb\s) PACKAGE 200 PIN SO-DIMM (P = JEDEC proposed pin-out) INDUSTRIAL TEMP OPTION (For commercial leave "blank" for industrial add "I") COMPONENT VENDOR NAME (M = Micron) (S = Samsung) G = RoHS COMPLIANT May 2006 Rev. 2 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED Document Title 512MB – 64Mx72 DDR2 SDRAM UNBUFFERED, w/PLL DRAM DIE OPTIONS: • SAMSUNG: C-Die, will move to E-Die Q2'06 • MICRON: U37Y: B-Die Revision History Rev # History Release Date Status Rev 0 Created January 2006 Advanced Rev 1 1.1 Updated pin-out to JECED proposed pin-outs May 2006 Advanced June 2006 Advanced 1.2 Added "P" for JECED proposed pin-out 1.3 Added die rev info 1.4 Added VCCSPD voltage specification Rev 2 May 2006 Rev. 2 2.1 Updated resistors in block diagram 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com