HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS(on) = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 130 A IL(RMS) Terminal (current limit) 100 IDM TC = 25°C, pulse width limited by TJM 520 A IAR TC = 25°C 100 A EAR TC = 25°C 85 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 700 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque miniBLOC, SOT-227 B (IXFN) E153432 S G S D A G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier g Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 300 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C V 4 V ±200 nA 100 2 µA mA 22 m Ω • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density DS98531F(01/03) IXFN 130N30 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 60A, pulse test 70 Ciss Coss 92 S 14500 pF 2650 pF 610 pF 45 ns 75 ns 130 ns 31 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf QG(on) QGS 380 nC 95 nC 180 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD RthJC 0.18 RthCK 0.05 Source-Drain Diode Symbol Test Conditions K/W K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V 130 A ISM Repetitive; pulse width limited by TJM 520 A VSD IF = 100A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 30A, -di/dt = 100 A/µs, VR = 100 V 250 n s QRM IRM 0.8 8 µC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 130N30 200 250 ID - Amperes 200 TJ=125OC 160 6V ID - Amperes VGS=10V 9V 8V 7V TJ=25OC 150 100 5V VGS=10V 9V 8V 7V 120 5V 80 40 50 0 0 4 8 12 0 16 0 4 8 Figure 1. Output Characteristics at 25OC 16 20 Figure 2. Output Characteristics at 125OC 2.4 2.2 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.2 RDS(ON) - Normalized 12 VDS - Volts VDS - Volts 2.0 1.8 1.6 TJ = 25OC 1.4 1.2 1.0 0.8 6V 0 50 100 150 200 VGS=10V 2.0 1.8 ID=120A 1.6 ID=60A 1.4 1.2 1.0 25 250 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 150 120 125 ID - Amperes ID - Amperes 90 100 75 50 TJ = 125oC 60 30 TJ = 25oC 25 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 0 2 3 4 VGS - Volts Figure 6. Admittance Curves 5 6 IXFN 130N30 12 18000 V Vds=300V DS = 150V = 65A ID=30A IG=10mA = 10mA 8 CISS 15000 Capacitance - pF VGS - Volts 10 6 4 2 f = 100KHz 12000 9000 6000 COSS 3000 CRSS 0 0 100 200 300 400 0 500 0 5 Gate Charge - nC 10 15 20 25 30 35 40 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 200 ID - Amperes 160 120 TJ = 125OC 80 TJ = 25OC 40 0 0.3 0.6 0.9 1.2 1.5 1.8 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 0.100 0.010 Single Pulse 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1