HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions S Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000 1000 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 38 152 38 A A A EAR EAS TC = 25°C TC = 25°C 60 5.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 20 V/ns 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 2500 V PD TC = 25°C VISOL 50/60 Hz, RMS, t = 1 minute Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2003 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 50 mA 3 mA S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features •Double metal process for low gate resistance •miniBLOC, with Aluminium nitride isolation •Unclamped Inductive Switching (UIS) rated •Low package inductance •Fast intrinsic Rectifier Applications • DC-DC converters • Switched-mode and resonant-mode power supplies • DC choppers • Pulse generators Advantages • Easy to mount • Space savings • High power density 0.25 Ω DS99027A(06/03) IXFN38N100Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25 Note 1 24 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 S 7200 pF 950 pF Crss 170 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns td(off) RG = 1 Ω (External) 57 ns 15 ns tf QG(on) QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD 250 nC 60 nC 105 nC 0.14 RthJC RthCK 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 trr QRM IRM K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IF = 25A -di/dt = 100 A/µs VR = 100 V 38 A 152 A 1.5 V 300 ns 1.4 µC 9 A miniBLOC, SOT-227 B Outline M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFB38N100Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 deg. C @ 25 Deg. C 40 80 VG S = 10V 35 6V 60 I D - Amperes 30 I D - Amperes VG S = 10V 7V 70 25 20 15 5V 40 30 10 20 5 10 0 6V 50 5V 0 0 2 4 6 8 10 12 0 3 6 V DS - Volts 15 18 21 24 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 40 2.8 VG S = 10V 6V 35 VGS = 10V 2.5 RD S (on) - Normalized 30 I D - Amperes 12 V DS - Volts Fig. 3. Output Characteristics 5V 25 20 15 10 5 2.2 1.9 I D = 38A 1.6 1.3 I D = 19A 1 0.7 0 0.4 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade V DS - Volts Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D25 Value vs. ID 40 2.6 VG S = 10V 2.4 35 T J = 125º C 2.2 30 2 I D - Amperes RD S (on) - Normalized 9 1.8 1.6 1.4 25 20 15 10 1.2 5 T J = 25º C 1 0.8 0 0 10 20 30 40 50 I D - Amperes © 2003 IXYS All rights reserved 60 70 80 -50 -25 0 25 50 75 100 TC - Degrees Centigrade IXFN38N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 50 80 70 40 T J = -40º C gf s - Siemens I D - Amperes 60 30 20 T J = 120º C 125º C 40 30 25º C 10 25º C 50 20 -40º C 10 0 0 3 3.5 4 4.5 5 5.5 0 6 10 20 Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 10 VD S = 500V I D = 19A I G = 10mA 80 8 70 60 VG S - Volts I S - Amperes 40 Fig. 10. Gate Charge 90 50 40 TJ = 125º C 30 20 6 4 2 TJ = 25º C 10 0 0 0.2 0.4 0.6 0.8 1 0 1.2 V SD - Volts 40 80 120 160 200 240 Q G - nanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 0.16 10000 0.14 C iss f = 1M Hz 0.12 R (th) J C - (ºC/W) Capacitance - pF 30 I D - Amperes V GS - Volts 1000 C oss 0.1 0.08 0.06 0.04 0.02 C rss 100 0 0 5 10 15 20 25 30 35 40 V DS - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343