IXYS IXFN72N55Q2

HiPerFETTM
Power MOSFET
IXFN 72N55Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
VDSS = 550 V
ID25 = 72 A
Ω
RDS(on)= 72 mΩ
≤ 250 ns
trr
Preliminary Data Sheet
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
S
Maximum Ratings
G
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
72
288
72
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
890
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
2500
V
PD
TC = 25°C
VISOL
50/60 Hz, RMS, t = 1 minute
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
V GS(th)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
550
VDS = VGS, ID = 8mA
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2003 IXYS All rights reserved
g
2.5
5.0
G = Gate
S = Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode
and resonant-mode
power supplies
• DC choppers
• Pulse
V
Advantages
• Easy to mount
100 µA
5 mA
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
±200 nA
TJ = 25°C
TJ = 125°C
S
D
generators
• Space savings
• High power density
72 mΩ
DS99030B(10/03)
IXFN 72N55Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25
Note 1
Ciss
Coss
40
57
S
10500
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
1500
pF
230
pF
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
30
23
ns
ns
td(off)
RG = 1 Ω (External)
58
ns
10
ns
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
IRM
Max.
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
123
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
K/W
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
trr
QRM
Inches
Min.
65
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
Millimeter
Min.
Max.
nC
0.05
Symbol
Dim.
258
0.14
Source-Drain Diode
M4 screws (4x) supplied
A
B
RthJC
RthCK
miniBLOC, SOT-227 B Outline
72
A
288
A
1.5
V
250
ns
1.2
µC
8
A
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFN 72N55Q2
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
180
72
VGS = 10V
8V
7V
63
140
I D - Amperes
54
I D - Amperes
VGS = 10V
8V
160
45
6V
36
27
18
120
7V
100
80
60
6V
40
5V
9
20
5V
0
0
0
1
2
3
4
5
0
6
2
4
6
Fig. 3. Output Characteristics
@ 125 Deg. C
72
2.6
14
16
18
20
VGS = 10V
2.4
R D S (on) - Normalized
I D - Amperes
12
2.8
54
6V
45
36
27
18
5V
2.2
2
1.8
I D = 72A
1.6
I D = 36A
1.4
1.2
1
0.8
9
0.6
0
0.4
0
2
4
6
8
10
12
-50
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
80
2.8
VGS = 10V
2.6
70
2.4
TJ = 125ºC
60
2.2
I D - Amperes
R D S (on) - Normalized
10
Fig. 4. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
VGS = 10V
8V
7V
63
8
V D S - Volts
V D S - Volts
2
1.8
1.6
TJ = 25ºC
1.4
50
40
30
20
1.2
10
1
0.8
0
0
20
40
60
80
100
120
I D - Amperes
© 2003 IXYS All rights reserved
140
160
180
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFN 72N55Q2
Fig. 8. Transconductance
100
110
90
100
80
90
TJ = -40ºC
25ºC
125ºC
80
70
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
60
50
40
30
70
60
50
40
30
TJ = 125ºC
25ºC
-40ºC
20
10
20
10
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
20
40
60
V G S - Volts
100
120
140
160
Fig. 10. Gate Charge
200
10
180
9
160
8
140
7
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
120
100
80
60
VDS = 275V
I D = 36A
I G = 10mA
6
5
4
3
40
2
TJ = 125ºC
20
1
TJ = 25ºC
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
40
80
120
160
200
240
280
Q G - nanoCoulombs
V S D - Volts
Fig. 12. Maxim um Transient Therm al
Re sistance
Fig. 11. Capacitance
0.16
100000
f = 1MHz
0.14
C iss
0.12
R (th) J C - (ºC/W)
Capacitance - pF
80
I D - Amperes
10000
C oss
1000
0.1
0.08
0.06
0.04
C rss
0.02
0
100
0
5
10
15
20
25
V D S - Volts
30
35
40
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343