HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS(on) = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C, Chip capability Terminal current limit 340 100 A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 1360 200 A A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 700 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 2500 3000 V~ V~ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s S G 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight miniBLOC, SOT-227 B (IXFN) E153432 30 g S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 70 VGH(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 100A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 100 2 μA mA 4 mΩ • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Linear current regulators Advantages • Easy to mount • Space savings • High power density DS98547D(05/04) IXFN 340N07 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 60A, pulse test 80 Ciss Coss 98 S 12200 pF 7100 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 3340 pF td(on) 100 ns 95 ns 200 ns 33 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 100A td(off) RG = 1 Ω (External) M4 screws (4x) supplied Dim. tf Qg(on) Qgs miniBLOC, SOT-227 B VGS = 10 V, VDS = 50 V, ID = 100A Qgd 490 nC 72 nC 266 nC RthJC 0.18 RthCK 0.05 Source-Drain Diode K/W K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 100A, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % trr QRM IRM IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ = 25°C 100 1.4 8 340 A 1360 A 1.2 V 200 ns μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXFN 340N07 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Output Characteristics @ 125 Deg. C 240 240 VGS=10V 9V 8V 7V 160 6V 120 5V 80 160 0 0 0.6 0.9 V DS - Volts 1.2 5V 80 40 0.3 0 1.5 5 1.6 RDS(ON) - Normalized 1.8 RDS(ON) - Ohm 4.5 ID=200A 3.5 ID=100A 1.2 1.6 2 1.4 1.2 ID=200A 1 ID=100A 0.8 2.5 2 -50 0.6 -25 0 25 50 75 100 125 150 -50 -25 TJ - Degrees Centigrade 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Temperature dependence of Breakdown & Threshold Voltage Fig. 5. RDS(ON) Normalized to I L(RMS) Value vs. I D 1.2 BVDSS & VGS(TH) - Normalized 1.6 TJ=125 °C 1.5 RDS(ON) - Normalized 0.8 Fig. 4. RDS(ON) Normalized to I L(RMS) Value vs. Junction Temperature 5.5 3 0.4 VDS - Volts Fig. 3. Temperature Dependence of RDS(ON) 4 6V 120 40 0 VGS=10V 9V 8V 7V 200 ID - Amperes ID - Amperes 200 1.4 1.3 1.2 1.1 TJ=25 °C 1 VGS(TH) BVDSS 1.1 1 0.9 0.8 0.7 0.9 0 50 100 150 ID - Amperes © 2004 IXYS All rights reserved 200 250 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXFN 340N07 Fig. 8. Transconductance Fig. 7. Input Admittance 180 250 150 GFS - Siemens ID - Amperes 200 150 TJ= -40 °C 100 25 °C 120 90 60 125 °C 50 TJ=25° 30 0 0 2.5 3 3.5 4 4.5 5 5.5 6 0 40 VGS - Volts 200 240 Fig. 10. Gate Charge -240 10 -200 8 VDS=50V -160 -120 V GS - Volts IS - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 80 120 160 ID - Amperes TJ=125 °C -80 TJ=25°C 6 4 2 -40 0 -0.4 ID=100A IG=10mA 0 -0.5 -0.6 -0.7 -0.8 -0.9 0 -1 VSD - Volts 100 200 300 400 500 QG - nanoCoulom bs Fig. 11. Capacitance Fig. 12. Transient Thermal Resistance 1 100000 R(TH)JC - (ºC/W) Capacitance - pF f=100kHz Ciss 10000 Coss Crss 0.1 0.01 0.001 1000 0 10 20 VDS - Volts 30 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 IXFN 340N07 Fig. 13. Forward-Bias Safe Operating Area 10,000 TC = 25ºC TJ = 150ºC R DS(on) Limit I D - Amperes 1,000 100µs 1ms 100 10ms DC 10 1 © 2004 IXYS All rights reserved 10 VD S - Volts 100