INTEGRATED CIRCUITS DATA SHEET UBA2014 600 V driver IC for HF fluorescent lamps Product specification 2002 May 16 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 FEATURES GENERAL DESCRIPTION • Adjustable preheat time The IC is a monolithic integrated circuit for driving electronically ballasted fluorescent lamps, with mains voltages up to 277 V (RMS) (nominal value). • Adjustable preheat current • Current controlled operating The circuit is made in a 650 V BCD power-logic process. It provides the drive function for the 2 discrete power MOSFETs. • Single ignition attempt • Adaptive non-overlap time control • Integrated high-voltage level-shift function Beside the drive function the IC also includes the level-shift circuit, the oscillator function, a lamp voltage monitor, a current control function, a timer function and protections. • Power-down function • Protection against lamp failures or lamp removal • Capacitive mode protection. APPLICATIONS The circuit topology enables a broad range of ballast applications at different mains voltages for driving lamp types from e.g. T8, T5, PLC, T10, T12, PLL and PLT. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION UBA2014T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 UBA2014P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 2002 May 16 2 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 QUICK REFERENCE DATA All voltages are referenced to GND; VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; unless otherwise specified; see Chapter “Application information”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High-voltage supply VHS high side supply voltage IHS < 30 µA; t < 1 s − − 600 V Start-up state VDD(start) oscillator start voltage 12.4 13.0 13.6 V VDD(stop) oscillator stop voltage − 9.1 − V IDD(start) start-up current VDD < VDD(start) − 170 200 µA IL = 10 µA − 2.95 − V Reference voltage VVref reference voltage Voltage controlled oscillator fmax maximum bridge frequency − 100 − kHz fmin minimum bridge frequency 38.9 40.5 42.1 kHz Output drivers Isource(GH) output driver source current VGH − VSH = 0; VGL = 0 − 180 − mA Isink(GH) output driver sink current VGH − VSH = 13 V − 300 − mA − 0.60 − V Preheat current sensor Vph preheat voltage level Lamp voltage sensor Vlamp(fail) lamp fail voltage level at pin LVS 0.77 0.81 0.85 V Vlamp(max) maximum lamp voltage level at pin LVS 1.44 1.49 1.54 V Average current sensor Voffset offset voltage VCS = 0 to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz − 3800 − µA/mV tph preheat time CCT = 330 nF; RIREF = 33 kΩ 1.6 1.8 2.0 s VOL(CT) LOW-level output voltage at pin CT − 1.4 − V VOH(CT) HIGH-level output voltage at pin CT − 3.6 − V Timer 2002 May 16 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 9 Vpd SUPPLY BOOTSTRAP LEVEL SHIFTER reference voltages digital FVDD HS DRIVER 10 11 supply (5 V) LS DRIVER analog UBA2014 6 GH SH GL VDD(L) GND 5 DRIVER LOGIC reset LOGIC COUNTER 4 1 8 LAMP VOLTAGE SENSOR 15 16 PCS CS+ CS− AVERAGE CURRENT SENSOR I Vlamp(fail) V 13 FREQUENCY CONTROL 2 CF LVS Fig.1 Block diagram. CSW Product specification 3 Vlamp(max) MGW579 IREF ACM UBA2014 4 PCS 12 LOGIC VOLTAGE CONTROLLED OSCILLATOR REFERENCE CURRENT • reset state • start-up state • preheat state • ignition state • burn state • hold state • power-down state LOGIC PREHEAT TIMER CT ANT/CMD STATE LOGIC Philips Semiconductors 14 3V 600 V driver IC for HF fluorescent lamps 7 BLOCK DIAGRAM ndbook, full pagewidth 2002 May 16 Vref VDD Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 PINNING SYMBOL PIN DESCRIPTION CT 1 preheat timer output CSW 2 voltage controlled oscillator input CF 3 oscillator output IREF 4 internal reference current input GND 5 ground GL 6 gate output for the low-side switch VDD 7 low-voltage supply PCS 8 preheat current sensor input FVDD 9 floating supply, supply for the high-side switch GH 10 gate output for the high-side switch SH 11 source of the high-side switch ACM 12 capacitive mode input LVS 13 lamp voltage sensor input Vref 14 reference voltage output CS+ 15 positive input for the average current sensor CS− 16 negative input for the average current sensor handbook, halfpage 16 CS − 15 CS + CSW 2 15 CS + 14 Vref CF 3 14 Vref 13 LVS IREF 4 16 CS − CSW 2 CF 3 IREF 4 handbook, halfpage CT 1 CT 1 GND 5 GND 5 12 ACM 12 ACM GL 6 11 SH GL 6 11 SH VDD 7 10 GH VDD 7 10 GH PCS 8 9 PCS 8 9 FVDD FVDD MGW581 MGW580 Fig.2 Pin configuration (DIP16). 2002 May 16 13 LVS UBA2014T UBA2014P Fig.3 Pin configuration (SO16). 5 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps The preheat time is defined by CCT and RIREF and consists of 7 pulses at CCT; the maximum ignition time is 1 pulse at CCT. The timing circuit starts operating after the start-up state, as soon as the low supply voltage (VDD) has reached VDD(H) or when a critical value of the lamp voltage (Vlamp(fail)) is exceeded. When the timer is not operating CCT is discharged to 0 V at 1 mA. FUNCTIONAL DESCRIPTION Start-up state Initial start-up can be achieved by charging the low voltage supply capacitor C7 (see Fig.8) via an external start-up resistor. Start-up of the circuit is achieved under the condition that both half-bridge transistors TR1 and TR2 are non-conductive. The circuit will be reset in the start-up state. If the low voltage supply (VDD) reaches the value of VDD(H) the circuit will start oscillating. A DC reset circuit is incorporated in the High-Side (HS) driver. Below the lock-out voltage at the FVDD pin the output voltage (VGH − VSH) is zero. The voltages at pins CF and CT are zero during the start-up state. Preheat state After starting at fmax, the frequency decreases until the momentary value of the voltage across sense resistor R14 reaches the internally fixed preheat voltage level (pin PCS). At crossing the preheat voltage level, the output current of the Preheat Current Sensor circuit (PCS) discharges the capacitor CCSW, thus raising the frequency. The preheat time begins at the moment that the circuit starts oscillating. During the preheat time the Average Current Sensor circuit (ACS) is disabled. An internal filter of 30 ns is included at pin PCS to increase the noise immunity. Oscillation The internal oscillator is a Voltage-Controlled Oscillator circuit (VCO) which generates a sawtooth waveform between the CFhigh level and 0 V. The frequency of the sawtooth is determined by capacitor CCF, resistor RIREF, and the voltage at pin CSW. The minimum and maximum switching frequencies are determined by RIREF and CCF; their ratio is internally fixed. The sawtooth frequency is twice the half-bridge frequency. The UBA2014 brings the transistors TR1 and TR2 into conduction alternately with a duty cycle of approximately 50%. An overview of the oscillator signal and driver signals is illustrated in Fig.4. The oscillator starts oscillating at fmax. During the first switching cycle the Low-Side (LS) transistor is switched on. The first conducting time is made extra long to enable the bootstrap capacitor to charge. Ignition state After the preheat time the ignition state is entered and the frequency will sweep down due to charging of the capacitor at pin CSW with an internally fixed current; see Fig.5. During this continuous decrease in frequency, the circuit approaches the resonant frequency of the load. This will cause a high voltage across the load, which normally ignites the lamp. The ignition voltage of a lamp is designed above the Vlamp(fail) level. If the lamp voltage exceeds the Vlamp(fail) level the ignition timer is started. Adaptive non-overlap Burn state The non-overlap time is realized with an adaptive non-overlap circuit (ANT). By using an adaptive non-overlap circuit, the application can determine the duration of the non-overlap time and make it optimum for each frequency (see Fig.4). The non-overlap time is determined by the slope of the half-bridge voltage, and is detected by the signal across resistor R16 which is connected directly to pin ACM. The minimum non-overlap time is internally fixed. The maximum non-overlap time is internally fixed at approximately 25% of the bridge period time. An internal filter of 30 ns is included at the ACM pin to increase the noise immunity. If the lamp voltage does not exceed the Vlamp(max) level the voltage at pin CSW will continue to increase until the clamp level at pin CSW is reached; see Fig.5. As a consequence the frequency will decrease until the minimum frequency is reached. When the frequency reaches its minimum level it is assumed that the lamp has ignited and the circuit enters the burn state. The Average Current Sensor circuit (ACS) will be enabled. As soon as the averaged voltage across sense resistor R14, measured at pin CS−, reaches the reference level at pin CS+, the average current sensor circuit will take over the control of the lamp current. The average current through R14 is transferred to a voltage at the voltage controlled oscillator and regulates the frequency and, as a result, the lamp current. Timing circuit A timing circuit is included to determine the preheat time and the ignition time. The circuit consists of a clock generator and a counter. 2002 May 16 UBA2014 6 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 Lamp failure mode Charge coupling DURING IGNITION STATE Due to parasitic capacitive coupling to the high voltage circuitry all pins are burdened with a repetitive charge injection. Given the typical application the pins IREF and CF are sensitive to this charge injection. For charge coupling of ±8 pC, a safe functional operation of the IC is guaranteed, independent of the current level. If the lamp does not ignite, the voltage level increases. When the lamp voltage exceeds the Vlamp(max) level, the voltage will be regulated at the Vlamp(max) level; see Fig.6. At crossing the Vlamp(fail) level the ignition timer was already started. If the voltage at pin LVS is above the Vlamp(fail) level at the end of the ignition time the circuit stops oscillating and is forced in a Power-down mode. The circuit will be reset only when the supply voltage is powered-down. Charge coupling at current levels below 50 µA will not interfere with the accuracy of the VCS, VPCS and VACM levels. Charge coupling at current levels below 20 µA will not interfere with the accuracy of any parameter. DURING BURN STATE If the lamp fails during normal operation, the voltage across the lamp will increase and the lamp voltage will exceed the Vlamp(fail) level; see Fig.7. At that moment the ignition timer is started. If the lamp voltage increases further it will reach the Vlamp(max) level. This forces the circuit to re-enter the ignition state and results in an attempt to re-ignite the lamp. If during restart the lamp still fails, the voltage remains high until the end of the ignition time. At the end of the ignition time the circuit stops oscillating and the circuit will enter in the Power-down mode. Design equations The following design equations are used to calculate the desired preheat time, the maximum ignition time, and the minimum and the maximum switching frequency. tph = 1.7 × 10−4 × CCT × RIREF (s) tign = 3.1 × 10−5 × CCT × RIREF (s) 3 125 × 10 f min = ------------------------------------- in kHz ( C CF × R IREF ) fmax = 2.5 × fmin (kHz) Power-down state with CCT in nF, RIREF in kΩ, and CCF in pF. Start of ignition is defined as the moment at which the measured lamp voltage crosses the Vlamp(fail) level; see Section “Lamp failure mode”. The Power-down state will be entered if, at the end of the ignition time, the voltage at pin LVS is above Vlamp(fail). In the Power-down mode the oscillator will be stopped and both TR1 and TR2 will be non-conductive. The VDD supply is internally clamped. The circuit is released from the Power-down state by lowering the low voltage supply below VDD(reset). Capacitive mode protection The signal across R16 also gives information about the switching behaviour of the half bridge. If, after the preheat state, the voltage across the ACM resistor (R16) does not exceed the VCMD level during the non-overlap time, the Capacitive Mode Detection circuit (CMD) assumes that the circuit is in the capacitive mode of operation. As a consequence the frequency will directly be increased to fmax. The frequency behaviour is decoupled from the voltage at pin CSW until CCSW has been discharged to zero. 2002 May 16 7 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 MGW582 handbook, full pagewidth VCF 0 V(GH-SH) 0 VGL 0 Vhb 0 VACM 0 time Fig.4 Oscillator and driver signals. handbook, full pagewidth Vlamp ignition state preheat state burn state Vlamp(max) Vlamp(fail) f min detection Timer on off time Fig.5 Normal ignition behaviour. 2002 May 16 8 MGW583 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps handbook, full pagewidth Vlamp UBA2014 ignition state preheat state power-down state Vlamp(max) Vlamp(fail) Timer on timer ended off time MGW584 Fig.6 Failure mode during ignition. handbook, full pagewidth Vlamp ignition state burn state power-down state Vlamp(max) Vlamp(fail) Timer on timer started timer ended off time Fig.7 Failure mode during burn. 2002 May 16 9 MGW585 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 60134); voltages with respect to pin GND. SYMBOL VHS PARAMETER CONDITIONS high side supply voltage MIN. MAX. UNIT IHS < 30 µA; t < 1 s 600 − V IHS < 30 µA 510 − V VDD(max) maximum voltage at pin VDD − 14 V VACM(max) maximum voltage at pin ACM −5 +5 V VPCS(max) maximum voltage at pin PCS −5 +5 V VLVS(max) maximum voltage at pin LVS 0 5 V VCS+(max) maximum voltage at pin CS+ 0 5 V VCS−(max) maximum voltage at pin CS− −0.3 +5 V VCSW(max) maximum voltage at pin CSW 0 5 V Tamb ambient temperature −25 +80 °C Tj junction temperature −25 +150 °C Tstg storage temperature −55 +150 °C Vesd electrostatic handling voltage pins FVDD, GH, and SH − ±1000 V pins CT, CSW, CF, IREF, GL, VDD, PCS, CS−, CS+, Vref, LVS, and ACM − ±2500 V note 1 Note 1. In accordance with the human body model, i.e. equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT 100 K/W 60 K/W SO16 50 K/W DIP16 30 K/W thermal resistance from junction to ambient in free air SO16 DIP16 Rth(j-pin) thermal resistance from junction to PCB in free air QUALITY SPECIFICATION In accordance with ‘SNW-FQ-611-E’. 2002 May 16 10 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 CHARACTERISTICS All voltages referenced to GND; VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; unless otherwise specified; see Chapter “Application information”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High-voltage supply leakage current on high-voltage pins voltage at pins FVDD, GH and SH = 600 V − − 30 µA VDD supply voltage for defined driver output TR1 = off; TR2 = off − − 6 V VDD(start) oscillator start voltage 12.4 13.0 13.6 V VDD(low) oscillator stop voltage 8.6 9.1 9.6 V VDD(hys) start-stop hysteresis 3.5 3.9 4.4 V IDD(start) start-up current VDD < VDD(start) − 170 200 µA VDD(clamp) clamp voltage Power-down mode 10 11 12 V Ipd power-down current VDD = 9 V − 170 200 µA VDD(reset) reset voltage TR1 = off; TR2 = off 4.5 5.5 7.0 V IDD operating supply current fbridge = 40 kHz without gate drive − 1.5 2.2 mA IL = 10 µA Ileak Start-up state Reference voltage VVref reference voltage 2.86 2.95 3.04 V Isource(Vref) source current capability 1 − − mA Isink(Vref) sink current capability 1 − − mA ZVref output impedance IL = 1 mA source − 3.0 − Ω ∆VVref/∆T temperature coefficient IL = 10 µA; Tamb = 25 to 150 °C − −0.64 − %/K Current supply VIREF voltage at pin IREF − 2.5 − V IIREF reference current range 65 − 95 µA 2.7 3.0 3.3 V Voltage controlled oscillator VCSW control voltage Vclamp clamp voltage burn state 2.8 3.1 3.4 V ICF(start) output oscillator start current VCF = 1.5 V 3.8 4.5 5.2 µA tstart first output oscillator stroke time − 50 − µs ICF(min) minimum output oscillator current VCF = 1.5 V − 21 − µA ICF(max) maximum output oscillator current VCF = 1.5 V − 54 − µA fmax maximum bridge frequency 90 100 110 kHz fmin minimum bridge frequency 38.9 40.5 42.1 kHz ∆fstab frequency stability Tamb = −20 to +80 °C − 1.3 − % VCF(high) high level output oscillator voltage f = fmin − 2.5 − V tnc(min) minimum non-overlap time GH to GL 0.68 0.90 1.13 µs GL to GH 0.75 1.00 1.25 µs 2002 May 16 11 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps SYMBOL tno(max) PARAMETER maximum non-overlap time UBA2014 CONDITIONS MIN. TYP. MAX. UNIT fbridge = 40 kHz; note 1 − 7.5 − µs Output drivers Io(source)(GH) high side output source current VGH − VSH = 0 135 180 235 mA Io(sink)(GH) high side output sink current VGH − VSH = 13 V 265 330 415 mA Io(source)(GL) low side output source current VGL = 0 135 200 235 mA Io(sink)(GL) low side output sink current VGL = 13 V 265 330 415 mA VOH(GH)(h) HIGH-level high side output voltage Io = 10 mA 12.5 − − V VOL(GH)(h) LOW-level high side output voltage Io = 10 mA − − 0.5 V VOH(GL)(l) HIGH-level low side output voltage Io = 10 mA 12.5 − − V VOL(GL)(l) LOW-level low side output voltage Io = 10 mA − − 0.5 V RHS(on) high side on resistance Io = 10 mA 32 39 45 Ω RHS(off) high side off resistance Io = 10 mA 16 21 26 Ω RLS(on) low side on resistance Io = 10 mA 32 39 45 Ω RLS(off) low side off resistance Io = 10 mA 16 21 26 Ω Vboot bootstrap diode forward drop voltage I = 5 mA 1.3 1.7 2.1 V VFVDD lockout voltage 2.8 3.5 4.2 V IFVDD floating well supply current DC level at VGH − VSH = 13 V − 35 − µA VPCS = 0.6 V − − 1 µA Preheat current sensor Ii(PCS) input current Vph preheat voltage level at pin PCS 0.57 0.60 0.63 V Io(source)(CSW) output source current VCSW = 2.0 V 9.0 10 11 µA Io(sink)(CSW) effective output sink current VCSW = 2.0 V − 10 − µA − − 1 µA Adaptive non-overlap and capacitive mode detection Ii(ACM) input current VCMD+ positive capacitive mode detection voltage 80 100 120 mV VCMD− negative capacitive mode detection voltage −68 −85 −102 mV VACM = 0.6 V Lamp voltage sensor Ii(LVS) input current − − 1 µA Vlamp(fail) lamp fail voltage level at pin LVS 0.77 0.81 0.85 V Vlamp(fail)(hys) hysteresis lamp fail voltage level at pin LVS 119 144 169 mV Vlamp(max) maximum lamp voltage level at pin LVS 1.44 1.49 1.54 V Io(sink)(CSW) output sink current VCSW = 2.0 V 27 30 33 µA Io(source)(ign) ignition output source current VCSW = 2.0 V 9.0 10 11 µA 2002 May 16 VLVS = 0.81 V 12 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps SYMBOL PARAMETER UBA2014 CONDITIONS MIN. TYP. MAX. UNIT Average current sensor Ii(CS) input current VCS = 0 V − − 1 µA Voffset offset voltage VCS+ = VCS− = 0 to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz 1900 3800 5700 µA/mV Io(CSW) output current source and sink; VCSW = 2 V 85 95 105 µA VCT = 2.5 V Timer Io(CT) preheat timer output current 5.5 5.9 6.3 µA VOL(CT) LOW-level preheat timer output voltage − 1.4 − V VOH(CT) HIGH-level preheat timer output voltage − 3.6 − V Vhys(CT) preheat timer output hysteresis 2.05 2.20 2.35 V tph preheat time CCT = 330 nF and RIREF = 33 kΩ 1.6 1.8 2.0 s tign ignition time CCT = 330 nF and RIREF = 33 kΩ − 0.26 − s Note 1. The maximum non-overlap is determined by the level of the CF signal. If this signal exceeds a level of 1.25 V the non-overlap will end, resulting in a maximum non-overlap time of 7.5 µs at a bridge frequency of 40 kHz. 2002 May 16 13 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 10 GH BOOTSTRAP HIGH SIDE DRIVER VDD 7 TR1 IRF820 R10 1 MΩ R1 1 MΩ L1 11 SH 1.9 mH C6 1.2 nF TR2 IRF820 6 GL LOW SIDE DRIVER C10 5.6 nF ADAPTIVE NON-OVERLAP TIMING AND CAPACITIVE MODE DETECTOR UBA2014 + VDC 400 V Z1 12 V 12 ACM R16 1.5 Ω CT 1 14 PREHEAT TIMER C7 330 nF DIVIDER VOLTAGE CONTROLLED OSCILLATOR REFERENCE CURRENT PREHEAT CURRENT SENSOR 8 PCS LAMP VOLTAGE SENSOR 13 LVS AVERAGE CURRENT SENSOR R13 150 Ω − + 5 3 2 14 IREF GND CF CSW Vref R12 33 kΩ C14 100 pF C13 220 nF C8 330 pF 47 Ω R20 220 kΩ 16 CS − R8 15 CS + 8.2 kΩ C19 56 nF R5 10 kΩ D4 BYD77D C17 6.8 nF C22 8.2 nF TLD36W C23 100 nF 4 R4 1 MΩ C15 330 nF C24 100 nF R9 Lamp DRIVER CONTROL SUPPLY Philips Semiconductors C5 100 nF 600 V driver IC for HF fluorescent lamps D1 BYD77D 9 FVDD APPLICATION INFORMATION ndbook, full pagewidth 2002 May 16 F1 1A C2 12 nF R14 1Ω R3 220 kΩ C3 1 nF R2 8.2 kΩ R18 180 kΩ C20 68 nF UBA2014 Fig.8 Test and application circuit. Product specification MGW586 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 PACKAGE OUTLINES SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.050 0.039 0.016 0.028 0.020 0.01 0.01 0.004 0.028 0.012 inches 0.244 0.041 0.228 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07 MS-012 2002 May 16 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 15 o 8 0o Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 2.2 inches 0.19 0.020 0.15 0.055 0.045 0.021 0.015 0.013 0.009 0.86 0.84 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOT38-1 050G09 MO-001 SC-503-16 2002 May 16 16 EUROPEAN PROJECTION ISSUE DATE 95-01-19 99-12-27 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages. SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). WAVE SOLDERING There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: Through-hole mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Surface mount packages Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (pre-heating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. 2002 May 16 UBA2014 17 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD MOUNTING PACKAGE WAVE suitable(2) Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount REFLOW(1) DIPPING − suitable BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable − HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable(3) suitable − PLCC(4), SO, SOJ suitable suitable − suitable − suitable − recommended(4)(5) LQFP, QFP, TQFP not SSOP, TSSOP, VSO not recommended(6) Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2002 May 16 18 Philips Semiconductors Product specification 600 V driver IC for HF fluorescent lamps UBA2014 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 16 19 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613502/01/pp20 Date of release: 2002 May 16 Document order number: 9397 750 09094