BAP65-02 Silicon PIN diode Rev. 04 — 8 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Silicon PIN diode BAP65-02 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches 1 cathode • Low diode capacitance 2 anode • Low diode forward resistance (low loss) • Very low series inductance. APPLICATIONS handbook, halfpage • RF attenuators and switches • Bandswitch for TV tuners 1 2 Top view • Series diode for mobile communication transmit/receive switch. MAM405 Marking code: K6. DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 100 mA Ptot total power dissipation − 715 mW Tstg storage temperature Ts ≤ 90 °C −65 +150 °C Tj junction temperature −65 +150 °C Rev. 04 - 8 January 2008 2 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP65-02 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR = 20 V − 20 nA Cd diode capacitance VR = 0 V; f = 1 MHz 0.65 − pF VR = 1 V; f = 1 MHz 0.55 0.9 pF VR = 3 V; f = 1 MHz 0.5 0.8 pF VR = 20 V; f = 1 MHz 0.375 − pF rD |s21|2 |s21|2 |s21|2 |s21|2 |s21|2 diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss IF = 1 mA; f = 100 MHz 1 − Ω IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω IF = 100 mA; f = 100 MHz 0.35 − Ω VR = 0; f = 900 MHz 10 − dB VR = 0; f = 1800 MHz 5.8 − dB VR = 0; f = 2450 MHz 4.4 − dB IF = 1 mA; f = 900 MHz 0.11 − dB IF = 1 mA; f = 1800 MHz 0.13 − dB IF = 1 mA; f = 2450 MHz 0.16 − dB IF = 5 mA; f = 900 MHz 0.08 − dB IF = 5 mA; f = 1800 MHz 0.11 − dB IF = 5 mA; f = 2450 MHz 0.13 − dB IF = 10 mA; f = 900 MHz 0.07 − dB IF = 10 mA; f = 1800 MHz 0.1 − dB IF = 10 mA; f = 2450 MHz 0.13 − dB IF = 100 mA; f = 900 MHz 0.07 − dB IF = 100 mA; f = 1800 MHz 0.1 − dB IF = 100 mA; f = 2450 MHz 0.128 − dB τL charge carrier life time when switched from IF = 10 mA to 0.17 IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − µs LS series inductance IF = 100 mA; f = 100 MHz − nH 0.6 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point Rev. 04 - 8 January 2008 VALUE UNIT 85 K/W 3 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP65-02 GRAPHICAL DATA MLD499 10 MLD500 1000 Cd handbook, halfpage handbook, halfpage rD (Ω) (fF) 800 600 1 400 200 10−1 10−1 10 1 IF (mA) 102 0 12 16 20 VR (V) f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MLD501 0 8 4 0 Diode capacitance as a function of reverse voltage; typical values. MLD502 0 handbook, halfpage handbook, halfpage s 2 21 (dB) s21 2 (5) −0.1 (dB) −10 (1) −0.2 (2) (3) (4) −20 −0.3 −30 −0.4 −0.5 0 1000 (1) IF = 0.5 mA. (2) IF = 1 mA. (3) IF = 5 mA. 2000 f (MHz) 3000 0 1000 2000 f (MHz) 3000 (4) IF = 10 mA. (5) IF = 100 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 −40 Insertion loss (|s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Fig.5 Rev. 04 - 8 January 2008 Isolation (|s21|2) of the diode as a function of frequency; typical values. 4 of 7 NXP Semiconductors Product specification Silicon PIN diode BAP65-02 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 Rev. 04 - 8 January 2008 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 5 of 7 BAP65-02 NXP Semiconductors Silicon PIN diode Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 8 January 2008 6 of 7 BAP65-02 NXP Semiconductors Silicon PIN diode Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BAP65-02_N_4 20080108 Product data sheet - BAP65-02_3 Modifications: • Package outline drawing on page 5 changed BAP65-02_3 (9397 750 08364) 20010511 Product specification - BAP65-02_2 BAP65-02_2 (9397 750 08237) 20010507 Product specification - BAP65-02_1 BAP65-02_1 (9397 750 07724) 20001220 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 January 2008 Document identifier: BAP65-02_N_4