BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor DESCRIPTION Marking code: Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. BSS83 = % M9 handbook, halfpage 4 3 d APPLICATIONS b g • analog and/or digital switch • switch driver BSS83 1 s 2 Top view MAM389 PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Fig.1 Simplified outline and symbol. Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage VDS max. 10 V Source-drain voltage VSD max. 10 V Drain-substrate voltage VDB max. 15 V Source-substrate voltage VSB max. 15 V Drain current (DC) ID max. 50 mA Total power dissipation up to Tamb = 25 °C Ptot max. 230 mW Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 µA VGS(th) > 0.1 V < 2.0 V RDSon < 45 Ω Crss typ. 0.6 pF Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA Feed-back capacitance VGS = VBS = −15 V; VDS = 10 V; f = 1 MHz Rev. 03 - 21 November 2007 2 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 10 V Source-drain voltage VSD max. 10 V Drain-substrate voltage VDB max. 15 V Source-substrate voltage VSB max. 15 V ID max. 50 mA Ptot max. 230 mW Drain current (DC) Total power dissipation up to Tamb = 25 °C(1) −65 to + 150 °C Storage temperature range Tstg Junction temperature Tj max. Rth j-a = 125 °C THERMAL RESISTANCE From junction to ambient in free air(1) Rev. 03 - 21 November 2007 430 K/W 3 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 CHARACTERISTICS Tamb = 25 °C unless otherwise specified Drain-source breakdown voltage VGS = VBS = −5 V; ID = 10 nA V(BR)DSX > 10 V V(BR)SDX > 10 V V(BR)DBO > 15 V V(BR)SBO > 15 V IDSoff < 10 nA ISDoff < 10 nA > 10 mS typ. 15 mS > 0,1 V < 2,0 V Source-drain breakdown voltage VGD = VBD = −5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; ID = 10 nA; open drain Drain-source leakage current VGS = VBS = −2 V; VDS = 6,6 V Source-drain leakage current VGD = VBD = −2 V; VSD = 6,6 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA gfs Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 µA VGS(th) Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB = 0 RDSon < 70 Ω VGS = 10 V; VSB = 0 RDSon < 45 Ω VGS = 3,2 V; VSB = 6,8 V (see Fig.4) RDSon typ. 80 Ω < 120 Ω Gate-substrate zener voltages VDB = VSB = 0; −IG = 10 µA VZ(1) > 12,5 V VDB = VSB = 0; +IG = 10 µA VZ(2) > 12,5 V Feed-back capacitance Crss typ. 0,6 pF Input capacitance Ciss typ. 1,5 pF Output capacitance Coss typ. 1,0 pF ton typ. 1,0 ns toff typ. 5,0 ns Capacitances at f = 1 MHz VGS = VBS = −15 V; VDS = 10 V Switching times (see Fig.2) VDD = 10 V; Vi = 5 V Note 1. Device mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm. Rev. 03 - 21 November 2007 4 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 Pulse generator: Ri = 50 Ω tr < 0,5 ns tf < 1,0 ns tp = 20 ns δ < 0,01 VDD 90% 90% handbook, full pagewidth 0.1 µF 50 Ω INPUT Vo 10% 630 Ω 10% tr tf ton T.U.T Vi toff 90% 90% 50 Ω OUTPUT MBK297 10% 10% MBK296 Fig.2 Switching times test circuit and input and output waveforms. MDA250 60 VGS = 4.5 V ID (mA) MDA251 1.2 handbook, halfpage handbook, halfpage ID (mA) 4V 40 VGS = 10 V 5V 4V 3.2 V 3V 0.8 3.5 V 3V 2.5 V 20 0.4 2V 0 2V 0 0 4 8 VDS (V) Tj = 25 °C. 12 0 40 80 VDSon (mV) 120 Tj = 25 °C. Fig.3 VSB = 0; typical values. Fig.4 VSB = 6,8 V; typical values. Rev. 03 - 21 November 2007 5 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor MDA252 50 BSS83 MDA253 12 handbook, halfpage handbook, halfpage ID (mA) 40 VSB = 0 V 4 V 12 V ID (mA) 8V 8 30 20 4 10 0 0 0 1 2 3 4 VGS (V) Tj = 25 °C. 0 1 2 3 VGSth (V) 4 Tj = 25 °C. Fig.5 VDS = 10 V; VBS = 0; typical values. Fig.6 VDS = VGS = VGS(th). MDA254 1.2 handbook, halfpage VGS = 10 V 5 V 4 V ID 3V 2V (mA) 0.8 0.4 0 0 20 40 60 80 100 VDSon (mV) Tj = 25 °C. Fig.7 VSB = 0; typical values. Rev. 03 - 21 November 2007 6 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 03 - 21 November 2007 7 of 9 BSS83 NXP Semiconductors MOSFET N-channel enhancement switching transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 21 November 2007 8 of 9 BSS83 NXP Semiconductors MOSFET N-channel enhancement switching transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BSS83_N_3 20071121 Product data sheet - BSS83_CNV_2 Modifications: BSS83_CNV_2 • Page 2; column 2; Marking code; row 1 changed 19910401 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 November 2007 Document identifier: BSS83_N_3