Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FA BPW 34 FAS BPW 34 FAS (R18R) Wesentliche Merkmale Features • Speziell geeignet für den Wellenlängenbereich von 830 nm bis 880 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 FAS/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten • Especially suitable for the wavelength range of 830 nm to 880 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 FAS/(R18R): Suitable for vapor-phase and IR-reflow soldering Anwendungen Applications • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Gerätefernsteuerung • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment • Photointerrupters Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS Q62702-P463 BPW 34 FAS (R18R) Q62702-P1829 2004-03-10 1 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR VR (t < 2 min) 16 32 V V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, λ = 870 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 Ip 50 (≥ 40) µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 730 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.65 × 2.65 mm × mm L×W Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sλ 0.65 A/W Quantenausbeute Quantum yield η 0.93 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 320 (≥ 250) mV 2004-03-10 2 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Kennwerte (TA = 25 °C, λ = 870 nm) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 23 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.03 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.9 × 10– 14 Nachweisgrenze, VR = 10 V, Detection limit D* 6.8 × 1012 2004-03-10 3 W -----------Hz cm × Hz -------------------------W BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) Relative Spectral Sensitivity Srel = f (λ) OHF01430 100 ΙP Srel % OHF01428 10 3 µA 10 4 mV VO Total Power Dissipation Ptot = f (TA) OHF00958 160 mW Ptot 140 80 10 2 10 3 70 VO 100 60 10 1 50 10 2 40 120 ΙP 80 60 30 10 0 10 1 -1 0 40 20 20 10 10 0 400 600 800 1000 nm 1200 λ 10 0 10 2 µW/cm 2 10 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee Dark Current IR = f (VR), E = 0 ΙR 10 1 OHF00081 100 C pA 80 ˚C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 OHF00082 10 3 Ι R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2004-03-10 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 ˚C 100 TA BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Maßzeichnung Package Outlines BPW 34 FA 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 FAS 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2004-03-10 5 BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FAS (R18R) 6.7 (0.264) 6.2 (0.244) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) ±0.2 (0.008) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) 0...5 ˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2004-03-10 6