MA3075WALT1 Preferred Device Zener Transient Voltage Suppressor SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE Features • SOT−23 Package Allows Two Separate Unidirectional • • • • • Configurations Low Leakage < 1 mA @ 5.0 V Breakdown Voltage: 7.2−7.9 V @ 5 mA Low Capacitance (80 pF typical @ 0 V, 1 MHz) ESD Protection Meeting: 16 kV Human Body Model ESD Protection Meeting: 30 kV Air and Contact Discharge Pb−Free Packages are Available 1 SOT−23 CASE 318 STYLE 12 MARKING DIAGRAM Mechanical Characteristics: • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 7W5 M G G 1 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 100 ms (Note 1) Ppk 15 W Steady State Power Dissipation Derate above 25°C (Note 2) °PD° 225 1.8 °mW° mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Maximum Junction Temperature RqJA 417 °C/W Operating Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C ESD Discharge MIL STD 883C − Method 3015−6 IEC61000−4−2, Air Discharge IEC61000−4−2, Contact Discharge VPP kV 16 30 30 December, 2005 − Rev. 2 *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MA3075WALT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel MA3075WALT1G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive 100 ms pulse width 2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in. © Semiconductor Components Industries, LLC, 2005 7W5 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MA3075WALT1/D MA3075WALT1 I ELECTRICAL CHARACTERISTICS Parameter Forward Voltage Symbol Conditions VF IF = 10 mA Voltage*2 VZ IZ = 5 mA Operating Resistance RZK IZ = 0.5 mA RZ IZ = 5 mA Zener Min 7.2 Typ Max Unit 0.8 0.9 V 7.5 6 7.9 V 120 W 15 W IR1 VR = 5 V 1 mA IR2 VR = 6.5 V 60 mA Temperature Coefficient of Zener Voltage*3 SZ IZ = 5 mA 5.3 mV/°C Terminal Capacitance Ct VR = 0 V Reverse Current 2.5 4.0 IF VC VBR VRWM V IR VF IT IPP 80 pF Uni−Directional TVS 100 250 200 150 100 50 PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tp 20 10 0 0 0 25 50 75 100 125 TEMPERATURE (°C) 150 175 0 20 40 t, TIME (ms) 60 80 Figure 2. 8 X 20 ms Pulse Waveform Figure 1. Steady State Power Derating Curve 100 IF, FORWARD CURRENT (mA) 1000 PPK, PEAK POWER (W) PEAK VALUE IRSM @ 8 ms tr 90 % OF PEAK PULSE CURRENT PD, POWER DISSIPATION (mW) 300 100 10 1 TA = 85°C 10 −40°C 25°C 1 0.1 0.01 10 100 tp, PULSE WIDTH (ms) 1000 0 Figure 3. Pulse Rating Curve 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (V) 1 Figure 4. Forward Current versus Forward Voltage http://onsemi.com 2 1.2 MA3075WALT1 1000 IR, LEAKAGE CURRENT (nA) VF, FORWARD VOLTAGE (V) 1.2 1 IF = 100 mA 0.8 3 mA 0.6 10 mA 0.4 0.2 0 −60 100 TA = 85°C −40°C 10 25°C 1 0.1 0.01 −40 −20 0 40 60 20 TA, AMBIENT TEMPERATURE (°C) 80 0 100 Figure 5. Forward Voltage versus Temperature 7 8 100 TA = −40°C VR = 6 V IZ, ZENER CURRENT (mA) IR, LEAKAGE CURRENT (nA) 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 6. Leakage Current versus Reverse Voltage 1000 100 VR = 5 V 10 1 85°C 10 25°C 1 0.1 0.01 VR = 1 V 0.1 −60 0.001 −40 −20 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) 80 100 5.5 Figure 7. Leakage Current versus Temperature 6 6.5 7 7.5 VZ, ZENER VOLTAGE (V) 8 8.5 Figure 8. Zener Current versus Zener Voltage 100 RZ, OPERATING RESISTANCE (W) 90 80 Cd, CAPACITANCE (pF) 1 f = 1 MHz TA = 25°C 70 60 50 40 30 20 10 0 10 1 0.1 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8 0.1 Figure 9. Capacitance 1 10 IZ, ZENER CURRENT (mA) Figure 10. Operating Resistance versus Zener Current http://onsemi.com 3 100 MA3075WALT1 SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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