CYSTEKEC BTC5095S3

CYStech Electronics Corp.
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 1/8
High Cutoff Frequency NPN Epitaxial Planar Transistor
BTC5095S3
Description
The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and
CATV band.
Symbol
Outline
BTC5095S3
SOT-323
B：Base
C：Collector
E：Emitter
Features
• Low Noise and High Gain:
• NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz
Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz
∣S21∣² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz
Applications
• Low noise and high gain amplifiers & Oscillator buffer amplifiers
• Cordless Phone : LNA , MIX ,and OSC
• Remote Controller
Absolute Maximum Ratings
• Maximum Ratings (Ta=25°C)
Parameters
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Pd
Tj
Tstg
Limits
10
18
2.5
20
150
125
-50~125
*1
Unit
V
V
V
mA
mW
°C
°C
Note: *1 Here we define the point DC current gain drops off.
BTC5095S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 2/8
Electrical Characteristics
• Characterization Information (Ta=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
Conditions
Symbol Min
VCB =3V, IE=0
ICBO
VEB =1V
IEBO
VCE =2V, IC =1mA
hFE(1)
52
VCE =6V, IC =7mA
hFE(2)
52
VCE =1V, IC =10mA
fT
VCE =3V, IC =12mA
VCE =2V, IC =4.2mA, f =0.9GHz
NFmin
VCE =5V, IC =4.5mA, f =0.9GHz
VCE =2V, IC =4.2mA, f =0.9GHz
GA
VCE =5V, IC =4.5mA, f =0.9GHz
VCE =2V, IC =4.2mA, f =0.9GHz
|S21|2
VCE =5V, IC =4.5mA, f =0.9GHz
VCB =10V, IE=0, f = 0.9GHz
Cob
-
DC Current Gain
Cutoff Frequency
Minimum Noise Figure
Associated Gain
Insertion Gain |S21|2
In 50 Ohm system
Output Capacitance
Typ. Max Unit
1
µA
1
µA
270
7.6
GHz
9
GHz
1.4
dB
1.6
dB
12
dB
13.5
dB
12.8
dB
13.5
dB
0.7
1.0
pF
Classification Of hFE(1)
Rank
Range
K
52~120
P
82~180
Q
120~270
S-Parameters
• VC=2V, IC=4.2mA, IB=60µA
FREQ.
(GHz)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
BTC5095S3
S11
Mag
0.604
0.524
0.454
0.399
0.355
0.320
0.291
0.268
0.249
0.237
0.225
0.221
0.218
0.216
0.220
0.223
0.229
Ang
-54.55
-68.94
-81.62
-92.38
-102.51
-111.90
-121.04
-129.71
-138.30
-147.20
-155.29
-163.42
-171.96
-179.45
173.74
166.14
160.61
S21
Mag
7.842
7.093
6.422
5.768
5.226
4.756
4.367
4.011
3.717
3.490
3.229
3.049
2.880
2.708
2.568
2.465
2.311
Ang
133.59
123.62
114.96
107.71
101.24
95.56
90.53
85.55
81.44
77.18
73.05
69.95
65.80
62.11
59.78
55.42
52.89
S12
Mag
0.067
0.077
0.084
0.090
0.096
0.101
0.107
0.113
0.118
0.125
0.131
0.137
0.144
0.151
0.158
0.167
0.173
S22
Ang
51.54
48.20
46.25
45.71
45.45
45.48
46.55
46.59
47.32
48.06
48.45
48.55
49.30
49.54
49.59
49.92
49.56
Mag
0.669
0.583
0.518
0.468
0.431
0.400
0.380
0.364
0.348
0.339
0.330
0.324
0.318
0.314
0.309
0.310
0.305
Ang
-35.46
-39.37
-41.88
-43.32
-44.21
-44.69
-44.62
-45.20
-45.38
-45.42
-46.12
-46.58
-47.16
-48.21
-48.87
-49.95
-51.14
CYStek Product Specification
CYStech Electronics Corp.
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
0.239
0.246
0.255
0.266
0.275
0.283
0.296
0.301
0.314
154.93
149.44
146.00
141.03
137.61
134.78
131.62
128.73
126.55
2.230
2.159
2.032
2.008
1.914
1.845
1.807
1.734
1.678
50.57
46.58
44.85
41.73
38.98
36.23
34.63
30.54
29.10
0.181
0.190
0.198
0.207
0.215
0.225
0.235
0.242
0.252
49.96
49.43
49.13
48.98
48.15
47.73
47.19
46.23
45.96
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 3/8
0.305
0.300
0.298
0.298
0.295
0.293
0.293
0.290
0.292
-52.25
-54.01
-54.87
-56.73
-58.27
-60.00
-61.99
-63.35
-66.03
• VC=5V, IC=4.5mA, IB=60µA
FREQ.
(GHz)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
S11
Mag
0.601
0.520
0.448
0.391
0.343
0.304
0.271
0.244
0.221
0.204
0.188
0.180
0.174
0.168
0.171
0.173
0.177
0.187
0.193
0.202
0.214
0.223
0.230
0.244
0.249
0.262
Ang
-50.63
-63.63
-75.05
-84.69
-93.82
-102.33
-110.71
-118.73
-126.87
-135.86
-144.08
-153.03
-162.61
-171.25
-179.18
171.39
164.95
158.33
151.69
148.00
142.43
138.68
135.64
132.44
129.17
127.23
S21
Mag
8.306
7.547
6.868
6.188
5.624
5.124
4.716
4.336
4.014
3.777
3.486
3.297
3.121
2.930
2.777
2.676
2.496
2.413
2.345
2.192
2.181
2.076
1.997
1.961
1.884
1.820
Ang
135.16
125.50
116.98
109.83
103.45
97.83
92.86
87.94
83.94
79.76
75.61
72.75
68.59
64.89
62.84
58.35
55.94
53.90
49.72
48.29
45.23
42.50
39.66
38.47
33.93
32.88
S12
S22
Mag
0.058
0.065
0.072
0.077
0.082
0.087
0.092
0.097
0.102
0.108
0.114
0.120
0.126
0.133
0.140
0.148
0.155
0.162
0.171
0.178
0.189
0.196
0.206
0.217
0.224
0.235
Ang
51.44
48.75
47.60
47.52
47.79
48.29
49.77
50.18
51.28
52.42
53.16
53.50
54.63
55.21
55.36
56.18
55.92
56.69
56.35
56.24
56.43
55.84
55.56
55.08
54.51
54.48
Mag
0.678
0.602
0.546
0.505
0.475
0.451
0.436
0.424
0.412
0.407
0.401
0.398
0.395
0.393
0.390
0.393
0.390
0.393
0.390
0.389
0.392
0.390
0.390
0.392
0.391
0.395
Ang
-29.88
-32.11
-33.33
-33.75
-33.95
-33.81
-33.39
-33.71
-33.60
-33.56
-34.10
-34.42
-34.93
-35.76
-36.39
-37.29
-38.39
-39.34
-40.76
-41.57
-43.10
-44.47
-46.00
-47.69
-48.94
-51.05
Ga
(dB)
18.89
15.66
F50-S
(dB)
1.67
1.4
F50-M
(dB)
2.33
1.74
G50
(dB)
17.89
15.22
• Smoothed noise data (VC=2V, IC=4.2mA, IB=60µA)
FREQ.
(GHz)
0.3
0.6
BTC5095S3
FMIN
(dB)
0.80
1.01
GAMMA OPT
Mag
Ang
0.622
13.9
0.401
29.9
Rn
(To 50)
0.45
0.35
CYStek Product Specification
CYStech Electronics Corp.
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
1.21
1.42
1.63
1.84
2.04
2.25
2.46
2.53
0.282
0.239
0.246
0.276
0.303
0.301
0.242
0.206
48.2
68.6
90.8
114.6
139.6
165.5
-167.8
-158.8
0.29
0.27
0.24
0.21
0.16
0.14
0.17
0.19
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 4/8
13.05
10.97
9.34
8.08
7.10
6.33
5.68
5.48
1.42
1.57
1.79
2.04
2.30
2.50
2.62
2.65
2.01
1.82
1.79
2.45
1.87
2.50
2.71
2.91
12.80
10.86
9.19
7.84
6.69
5.64
4.78
4.50
Ga
(dB)
19.43
16.36
13.85
11.84
10.24
9.00
8.03
7.27
6.64
6.45
F50-S
(dB)
1.80
1.51
1.51
1.65
1.85
2.09
2.32
2.51
2.64
2.68
F50-M
(dB)
2.40
1.84
2.38
1.88
1.88
2.50
1.81
2.61
2.63
2.92
G50
(dB)
18.39
15.83
13.47
11.54
9.89
8.55
7.40
6.35
5.50
5.20
• Smoothed noise data (VC=5V, IC=4.5mA, IB=60µA)
FREQ.
(GHz)
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
FMIN
(dB)
0.87
1.08
1.28
1.49
1.70
1.91
2.12
2.33
2.54
2.61
GAMMA OPT
Mag
Ang
0.631
12.4
0.411
26.3
0.288
42.5
0.237
61.0
0.233
81.7
0.251
104.9
0.267
130.5
0.256
158.5
0.193
-170.9
0.157
-160.1
Rn
(To 50)
0.49
0.38
0.32
0.29
0.27
0.23
0.19
0.16
0.19
0.22
HSPICE 2G.6 Model
• NPN BJT Parameters
IS=1.444E-16 (A)
BF=85.9
NF=1.0
VAF=45.9 (V)
IKF=160.3E-3 (A)
ISE=2.0E-18 (A)
NE=2.0
BR=18.54
NR=1.01
VAR=6.299
MJE=0.3882
TF=1.22E-11 (Sec)
XTF=1.70
VTF=0.69 (V)
ITF=0.1 (A)
PTF=10.0 (deg)
CJC=2.38E-13 (F)
VJC=0.7 (V)
MJC=0.4474
XCJC=0.3
TR=1.0E-9 (Sec)
CJS=2.43E-13 (F)
VJS=0.5734 (V)
MJS=0.3798
XTB=0.0
EG=1.11 (eV)
XTI=3.0
FC=0.9
TNOM=25 (°C)
• B’-E’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=10.0 (Ohm)
VJ=1.003 (V)
N=1.0
M=0.3882
TT=0.0 (Sec)
EG=1.11 (eV)
XTI=3.0
FC=0.9
BV=0.0 (V)
IBV=1.0E-3 (A)
KF=0.0
AF=1.0
TNOM=25 (°C)
• C’-S’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=0.0 (Ohm)
VJ=0.5734 (V)
N=1.0
M=0.3798
XTI=3.0
FC=0.5
BV=0.0 (V)
KF=0.0
AF=1.0
TNOM=27 (°C)
BTC5095S3
IKR=10.0E-3
ISC=1.21E-16
NC=1.01
RB=4.30 (Ohm)
IRB=20.0E-3 (A)
RBM=2.78 (Ohm)
RE=1.011 (Ohm)
RC=16.69 (Ohm)
CJE=6.04E-13 (F)
VJE=1.003 (V)
CYStek Product Specification
CYStech Electronics Corp.
TT=0.0 (Sec)
EG=1.11 (eV)
IBV=1.0E-3(A)
• Other Parasitic Parameters
REX=0.0 (Ohm)
RSS=10.0 (Ohm)
RBX=0.0 (Ohm)
RSC=250.0 (Ohm)
RCX=0.0 (Ohm)
CSP=20.89 (fF)
RSX=5.0 (Ohm)
CSC=41.79 (fF)
RSP=450.0 (Ohm)
C1=70 (fF)
C2=150 (fF)
C3=80 (fF)
Le=0.6 (nH)
Lb=0.85 (nH)
Lc=0 (nH)
Transistor Chip Equivalent Circuit
C3
B
RBX
Rsp
C
L1
G-P
S’
CSP
Base
RSC
CSC
E
REX
0.1nH
L1=0.5 (nH)
L2=0.5 (nH)
L3=0.6 (nH)
Package Equivalent Circuit
C’
B’
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 5/8
LC
C
Lb
Transistor S
Chip
B
C1
E
L2
Collector
C2
Le
RSS
RSX
L3
Emitter
BTC5095S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 6/8
Characteristic Curves
Fig.2 Typical Forward Current Gain & Collector Current
100
1.00E-01
90
1.00E-02
80
1.00E-03
70
1.00E-04
Current Gain
Collector and Base Currents (A)
Fig.1 Typical Forward Gummel Plot
1.00E+00
VCE=1V
1.00E-05
1.00E-06
50
40
1.00E-07
30
1.00E-08
20
1.00E-09
10
1.00E-10
0
0.2
0.4
0.6
0.8
1
VCE=1V
60
0
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
1.2
Collector Current (A)
Base-Emitter Bias Voltage (V)
Fig.3 Typical Output Characteristics
Fig.4 Typical fT & Collector Current
5.0E-03
1.0E+10
Vce = 1V
Vce = 3 V
9.0E+09
Ib=50uA
8.0E+09
Cutoff Frequency (Hz)
4.0E-03
Collector Currennt (A)
Ib=40uA
3.0E-03
Ib=30uA
2.0E-03
Ib=20uA
6.0E+09
5.0E+09
4.0E+09
3.0E+09
2.0E+09
Ib=10uA
1.0E-03
7.0E+09
1.0E+09
0.0E+00
1.0E-04
0.0E+00
0
1
2
3
4
5
1.0E-03
20
4.5
18
4
16
3.5
14
Associated Gain (dB)
NFmin (dB)
1.0E-01
Fig.6 Typical Associated Gain & Collector Current
Fig.5 Typical NFmin & Collector Current
5
3
2.5
VCE=2V
2
1.0E-02
Collector Current (A)
Collector Voltage (V)
1.5
VCE=2V
12
10
8
6
1
4
0.5
2
0
0
0.1
BTC5095S3
1
10
Collector Current (mA)
100
0.1
1
10
100
Collector Current (mA)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 7/8
Fig.7 Capacitance & Reverse-Biased Voltage
1
Capacitance (pF)
Cob
0.1
0.1
1
10
Reverse Biased Voltage (V)
BTC5095S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 8/8
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
TE
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style: Pin 1.Base 2.Emitter 3.Collector
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC5095S3
CYStek Product Specification