Spec. No. : C213WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 1/3 CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 B：Base C：Collector E：Emitter Features • Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz • Super mini-mold package Applications • Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25℃) Parameters Symbol Limits Unit Collector-Emitter Breakdown Voltage VCEO 3 V Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature VCBO VEBO IC Pd Tj Tstg 5 2 10 30 150 -65~+150 V V mA mW °C °C BTC5181WC3 CYStek Product Specification Spec. No. : C213WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 2/3 CYStech Electronics Corp. Electrical Characteristics (TA=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Noise Figure Insertion Gain |S21e|2 in 50Ω system Output Capacitance Conditions VCB =3V, IE=0 VEB =1V VCE =2V, IC =7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, IC =3mA, f =2GHz VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCB =2V, IE=0, f = 1MHz Symbol ICBO IEBO hFE fT NF |S21e| 2 Cob Min 70 10 8.5 - Typ. 12 10 1.5 1.5 12 11 0.7 Max 100 100 140 15.5 13 2.0 2.0 1.0 Unit nA nA GHz GHz dB dB dB dB pF Note 1: Pulse test: Pulse width≤ 380µs, duty cycle≤ 2%. BTC5181WC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C213WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 3/3 SOT-523 Dimension Marking: C A 3 D 1 T1 3E_ B 2 _ : hFE Rank Code G F H I E 3-Lead SOT-523 Plastic Surface Mounted Package CYStek Package Code: C3 J K Style: Pin 1.Base 2.Emitter 3.Collector L N M O *: Typical Inches Min. Max. 0.0079 0.0157 0.0591 0.0669 0.0118 0.0197 0.0295 0.0335 0.0118 0.0197 0.0039 0.0118 0.0039 0.0118 *0.0197 - DIM A B C D E F G H Millimeters Min. Max. 0.20 0.40 1.50 1.70 0.30 0.50 0.75 0.85 0.30 0.50 0.10 0.30 0.10 0.30 *0.50 - DIM I J K L M N O Inches Min. Max. *0.0197 0.0610 0.0650 0.0276 0.0315 0.0224 0.0248 0.0020 0.0059 0.0039 0.0118 0 0.0031 Millimeters Min. Max. *0.50 1.55 1.65 0.70 0.80 0.57 0.63 0.05 0.15 0.10 0.30 0 0.08 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC5181WC3 CYStek Product Specification