CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 1/4 High Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) BTC3838N3 Features • High transition frequency, fT=3.2GHz(typ.) • Low output capacitance, Cob=0.8pF(typ.) Applications • UHF converter. • Local oscillator Symbol Outline SOT-23 BTC3838N3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC3838N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 20 11 5 50 200 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 20 11 3 56 1.4 - Typ. 3.2 0.8 Max. 500 500 0.5 270 1.5 Unit V V V nA nA V GHz pF Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VEB=2V, IC=0 IC=10mA, IB=5mA VCE=10V, IC=5mA VCE=10V, IC=10mA, f=500MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTC3838N3 N 56~120 P 82~180 Q 120~270 CYStek Product Specification Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE VCE=10V 100 10 100 IC=10IB IC=2IB 10 0.1 1 10 Collector Current---IC(mA) 100 0.1 Saturation Voltage vs Collector Current 10000 Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) 100 Cutoff Frequency vs Collector Current 10000 VBE(SAT)@IC=10IB 1000 100 1000 100 0.1 1 10 Collector Current---IC(mA) 100 0.1 Output Capacitance vs Reverse Biased Voltage 1 10 Collector Current---IC(mA) 100 Power Derating Curve 10 250 Power Dissipation---PD(mW) Output Capacitance---Cob(pF) 1 10 Collector Current---IC(mA) 1 0.1 200 150 100 50 0 0.1 1 10 Reverse Biased Voltage---VCB(V) BTC3838N3 100 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 4/4 SOT-23 Dimension Marking: A L 3 S B 1D 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC3838N3 CYStek Product Specification