CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514L3 Symbol Outline BTC3906L3 SOT-223 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation@TC=25℃ Junction Temperature Storage Temperature BTC3906L3 Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 5 150 -55~+150 Unit V V V mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 25 60 40 52 100 - Typ. 0.1 - Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 4 Rank Range BTC3906L3 K 52~120 P 82~180 Q 120~270 R 180~390 CYStek Product Specification Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) 1000 Current Gain---HFE HFE@VCE=6V VCE(SAT)@IC=10IB 100 10 100 0.1 1 10 0.1 100 1 10 100 Collector Current ---IC(mA) Collector Current--- IC(mA) Cutoff Frequency vs Collector Current Saturation Voltage vs Collector Current 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 0.1 100 0.1 1 10 100 1000 Collector Current ---IC(mA) 1 10 100 Collector Current---IC(mA) Power Derating Curves Power Dissipation---PD(W) 6 5 4 3 2 1 0 0 50 100 150 200 Ambient Temperature ---TC(℃ ) BTC3906L3 CYStek Product Specification Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-223 Dimension A Marking: B G1 C 1 2 3 D E Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC3906L3 CYStek Product Specification