SII S-8211CAN

Rev.5.0_00
BATTERY PROTECTION IC
FOR 1-CELL PACK
S-8211C Series
The S-8211C Series are protection ICs for single-cell lithium-ion /
lithium polymer rechargeable batteries and include high-accuracy
voltage detectors and delay circuits.
These ICs are suitable for protecting single-cell rechargeable
lithium-ion / lithium polymer battery packs from overcharge,
overdischarge, and overcurrent.
„ Features
(1) High-accuracy voltage detection circuit
• Overcharge detection voltage
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Accuracy ±25 mV (+25 °C)
Accuracy ±30 mV (−5 to +55 °C)
• Overcharge release voltage
3.8 to 4.4 V*1
Accuracy ±50 mV
• Overdischarge detection voltage
2.0 to 3.0 V (10 mV steps)
Accuracy ±50 mV
*2
Accuracy ±100 mV
• Overdischarge release voltage
2.0 to 3.4 V
• Discharge overcurrent detection voltage
0.05 to 0.30 V (10 mV steps)
Accuracy ±15 mV
• Load short-circuiting detection voltage
0.5 V (fixed)
Accuracy ±200 mV
• Charge overcurrent detection voltage
−0.1 V (fixed)
Accuracy ±30 mV
Detection delay times are generated by an internal circuit (external capacitors are unnecessary).
Accuracy ±20%
High-withstanding-voltage device is used for charger connection pins
(VM pin and CO pin : Absolute maximum rating = 28 V)
0 V battery charge function available / unavailable are selectable.
Wide operating temperature range
−40 to +85 °C
Low current consumption
• Operation mode
3.0 µA typ., 5.5 µA max. (+25 °C)
• Power-down mode
0.2 µA max. (+25 °C)
Small package
SOT-23-5, SNT-6A
Lead-free product
3.9 to 4.4 V (5 mV steps)
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 to 0.4 V in 50 mV steps.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 to 0.7 V in 100 mV steps.)
„ Applications
• Lithium-ion rechargeable battery packs
• Lithium polymer rechargeable battery packs
„ Packages
Package Name
SOT-23-5
SNT-6A
Drawing Code
Package
Tape
Reel
Land
MP005-A
PG006-A
MP005-A
PG006-A
MP005-A
PG006-A
−
PG006-A
Seiko Instruments Inc.
1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Block Diagram
Output control circuit
0 V battery charge circuit
or 0 V battery charge
inhibition circuit
DO
Divider control
circuit
Oscillator control
circuit
VDD
+
Charger detection circuit
CO
−
+
−
Discharge overcurrent detection
comparator
Overcharge
detection
comparator
RVMD
+
VM
−
RVMS
Charge overcurrent detection
comparator
Load short-circuiting detection
comparator
Remark All diodes shown in figure are parasitic diodes.
Figure 1
2
−
Overdischarge
detection
comparator
+
−
+
Seiko Instruments Inc.
VSS
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Product Name Structure
1. Product Name
S-8211C
xx
-
xxxx
G
Package name (abbreviation) and IC packing specifications *1
M5T1 : SOT-23-5, Tape
I6T1 : SNT-6A, Tape
*2
Serial code
Sequentially set from AA to ZZ
*1. Refer to the taping specifications.
*2. Refer to the “2. Product Name List”.
Seiko Instruments Inc.
3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
2. Product Name List
(1) SOT-23-5
Table 1
Product Name / Item
Overcharge
Detection
Voltage
VCU
Overcharge Over-discharge Over-discharge
Release
Detection
Release
Voltage
Voltage
Voltage
VCL
VDL
VDU
Discharge
Overcurrent
Detection
Voltage
VDIOV
0 V Battery
Charge
Function
Delay Time
Combination*1
S-8211CAA-M5T1G
4.275 V
4.175 V
2.30 V
2.40 V
0.10 V
Available
(1)
S-8211CAB-M5T1G
4.325 V
4.075 V
2.50 V
2.90 V
0.15 V
Unavailable
(2)
S-8211CAD-M5T1G
4.350 V
4.150 V
2.30 V
3.00 V
0.20 V
Available
(3)
S-8211CAE-M5T1G
4.280 V
4.180 V
2.30 V
2.30 V
0.12 V
Available
(4)
S-8211CAF-M5T1G
4.275 V
4.275 V
2.30 V
2.30 V
0.10 V
Available
(5)
S-8211CAH-M5T1G
4.280 V
4.080 V
2.30 V
2.30 V
0.08 V
Available
(1)
S-8211CAI-M5T1G
4.280 V
4.080 V
2.30 V
2.30 V
0.10 V
Available
(1)
S-8211CAJ-M5T1G
4.280 V
4.080 V
2.30 V
2.30 V
0.10 V
Unavailable
(1)
S-8211CAK-M5T1G
4.280 V
4.080 V
2.30 V
2.30 V
0.13 V
Unavailable
(1)
S-8211CAL-M5T1G
4.280 V
4.130 V
2.60 V
3.10 V
0.15 V
Unavailable
(1)
S-8211CAM-M5T1G
4.280 V
4.130 V
2.80 V
3.10 V
0.15 V
Unavailable
(1)
S-8211CAN-M5T1G
4.200 V
4.100 V
2.80 V
2.90 V
0.15 V
Unavailable
(1)
S-8211CAO-M5T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.12 V
Available
(5)
S-8211CAP-M5T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.13 V
Available
(5)
S-8211CAQ-M5T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.15 V
Available
(5)
S-8211CAR-M5T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.15 V
Available
(1)
S-8211CAS-M5T1G
4.280 V
4.130 V
2.80 V
3.10 V
0.10 V
Unavailable
(1)
0.10
V
Available
(4)
S-8211CAT-M5T1G
4.275 V
4.075 V
2.80 V
3.10 V
S-8211CAU-M5T1G
4.280 V
4.130 V
2.80 V
3.10 V
0.05 V
Unavailable
(1)
S-8211CAV-M5T1G
4.325 V
4.075 V
2.50 V
2.90 V
0.15 V
Available
(2)
Available
(1)
S-8211CAY-M5T1G
4.280 V
4.280 V
2.80 V
2.80 V
0.05 V
Available
(1)
S-8211CAZ-M5T1G
4.280 V
4.280 V
3.00 V
3.00 V
0.075 V
*1. Refer to the Table 3 about the details of the delay time combinations (1) to (7).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
4
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(2) SNT-6A
Table 2
Product Name / Item
Overcharge
Detection
Voltage
VCU
Overcharge Over-discharge Over-discharge
Release
Detection
Release
Voltage
Voltage
Voltage
VCL
VDL
VDU
Discharge
Overcurrent
Detection
Voltage
VDIOV
0 V Battery
Charge
Function
Delay Time
Combination*1
(1)
Available
S-8211CAA-I6T1G
4.275 V
4.175 V
2.30 V
2.40 V
0.10 V
S-8211CAB-I6T1G
4.325 V
4.075 V
2.50 V
2.90 V
0.15 V
Unavailable
(2)
S-8211CAD-I6T1G
4.350 V
4.150 V
2.30 V
3.00 V
0.20 V
Available
(3)
4.280 V
4.180 V
2.30 V
2.30 V
0.12 V
S-8211CAE-I6T1G
Available
(4)
4.275
V
4.275
V
2.30
V
2.30
V
0.10
V
S-8211CAF-I6T1G
Available
(5)
4.280 V
4.080 V
2.30 V
2.30 V
0.08 V
S-8211CAH-I6T1G
Available
(1)
4.280 V
4.080 V
2.30 V
2.30 V
0.10 V
S-8211CAI-I6T1G
Available
(1)
4.280 V
4.080 V
2.30 V
2.30 V
0.10 V
S-8211CAJ-I6T1G
Unavailable
(1)
4.280 V
4.080 V
2.30 V
2.30 V
0.13 V
S-8211CAK-I6T1G
Unavailable
(1)
4.280
V
4.130
V
2.60
V
3.10
V
0.15
V
S-8211CAL-I6T1G
Unavailable
(1)
4.280 V
4.130 V
2.80 V
3.10 V
0.15 V
S-8211CAM-I6T1G
Unavailable
(1)
4.200 V
4.100 V
2.80 V
2.90 V
0.15 V
S-8211CAN-I6T1G
Unavailable
(1)
4.275 V
4.075 V
2.30 V
2.30 V
0.12 V
S-8211CAO-I6T1G
Available
(5)
(5)
S-8211CAP-I6T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.13 V
Available
(5)
S-8211CAQ-I6T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.15 V
Available
(1)
S-8211CAR-I6T1G
4.275 V
4.075 V
2.30 V
2.30 V
0.15 V
Available
4.280 V
4.130 V
2.80 V
3.10 V
0.10 V
S-8211CAS-I6T1G
Unavailable
(1)
4.275 V
4.075 V
2.80 V
3.10 V
0.10 V
S-8211CAT-I6T1G
Available
(4)
S-8211CAU-I6T1G
4.280 V
4.130 V
2.80 V
3.10 V
0.05 V
Unavailable
(1)
S-8211CAV-I6T1G
4.325 V
4.075 V
2.50 V
2.90 V
0.15 V
Available
(2)
S-8211CAW-I6T1G
4.280 V
4.080 V
2.40 V
2.40 V
0.05 V
Unavailable
(6)
(4)
Available
S-8211CAX-I6T1G
4.275 V
4.175 V
2.30 V
2.30 V
0.12 V
Available
(1)
S-8211CAY-I6T1G
4.280 V
4.280 V
2.80 V
2.80 V
0.05 V
(1)
Available
S-8211CBA-I6T1G
4.275 V
4.175 V
2.30 V
2.40 V
0.05 V
(1)
Available
S-8211CBB-I6T1G
4.300 V
4.100 V
2.30 V
2.30 V
0.13 V
Available
(5)
S-8211CBD-I6T1G
4.275 V
4.275 V
2.30 V
2.30 V
0.05 V
Unavailable
(7)
S-8211CBN-I6T1G
4.225 V
4.125 V
2.00 V
2.00 V
0.20 V
Available
(5)
S-8211CBO-I6T1G
4.270 V
4.070 V
2.30 V
2.30 V
0.10 V
Unavailable
(4)
S-8211CBR-I6T1G
4.280 V
4.180 V
2.30 V
2.30 V
0.12 V
*1. Refer to the Table 3 about the details of the delay time combinations (1) to (7).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
Seiko Instruments Inc.
5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
Table 3
Delay Time
Combination
Overcharge
Detection
Delay Time
tCU
Overdischarge
Detection
Delay Time
tDL
Discharge Overcurrent
Detection
Delay Time
tDIOV
Load Short-circuiting
Detection
Delay Time
tSHORT
Charge Overcurrent
Detection
Delay Time
tCIOV
(1)
1.2 s
150 ms
9 ms
300 µs
9 ms
(2)
(3)
(4)
(5)
(6)
(7)
1.2 s
143 ms
1.2 s
1.2 s
1.2 s
573 ms
150 ms
38 ms
150 ms
38 ms
150 ms
150 ms
9 ms
18 ms
18 ms
9 ms
4.5 ms
4.5 ms
560 µs
300 µs
300 µs
300 µs
300 µs
300 µs
9 ms
9 ms
9 ms
9 ms
9 ms
4.5 ms
Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office.
Table 4
Delay Time
Symbol
Selection Range
Remark
Overcharge detection delay time
tCU
143 ms
573 ms
1.2 s
Select a value from the left.
Overdischarge detection delay time
tDL
38 ms
150 ms
300 ms
Select a value from the left.
Discharge overcurrent detection delay time
tDIOV
4.5 ms
9 ms
18 ms
Select a value from the left.
Load short-circuiting detection delay Time
tSHORT
−
300 µs
560 µs
Select a value from the left.
tCIOV
4.5 ms
9 ms
18 ms
Select a value from the left.
Charge overcurrent detection delay time
Remark The value surrounded by bold lines is the delay time of the standard products.
6
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Pin Configurations
Table 5
SOT-23-5
Top view
5
1
4
2
3
Pin No.
Symbol
1
VM
2
3
VDD
VSS
4
DO
5
CO
Description
Voltage detection between VM pin and VSS pin
(Overcurrent / charger detection pin)
Connection for positive power supply input
Connection for negative power supply input
Connection of discharge control FET gate
(CMOS output)
Connection of charge control FET gate
(CMOS output)
Figure 2
SNT-6A
Table 6
Top view
1
6
2
5
3
4
Figure 3
Pin No.
1
Symbol
NC*1
Description
No connection
Connection of charge control FET gate
2
CO
(CMOS output)
Connection of discharge control FET gate
3
DO
(CMOS output)
4
VSS
Connection for negative power supply input
5
VDD
Connection for positive power supply input
Voltage detection between VM pin and VSS pin
6
VM
(Overcurrent / charger detection pin)
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Seiko Instruments Inc.
7
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Absolute Maximum Ratings
Table 7
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Input voltage between VDD pin and
VSS pin
VM pin input voltage
Applied pin
Absolute Maximum Ratings
Unit
VDS
VDD
VSS − 0.3 to VSS + 12
V
VVM
VM
VDD − 28 to VDD + 0.3
V
DO pin output voltage
VDO
DO
VSS − 0.3 to VDD + 0.3
V
CO pin output voltage
VCO
CO
−
−
−
−
VVM − 0.3 to VDD + 0.3
250 (When not mounted on board)
600*1
400*1
− 40 to + 85
V
mW
mW
mW
°C
− 55 to + 125
°C
Power dissipation
SOT-23-5
PD
SNT-6A
Operating ambient temperature
Topr
Storage temperature
Tstg
−
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution
The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Power Dissipation (P D) [mW]
700
600
SOT-23-5
500
SNT-6A
400
300
200
100
0
0
100
150
50
Ambient Temperature (Ta) [°C]
Figure 4 Power Dissipation of Package (When Mounted on Board)
8
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Electrical Characteristics
1. Except Detection Delay Time (25 °C)
Table 8
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
VCU
−0.025
VCU
−0.03
VCL
−0.05
VCL
−0.025
VDL
−0.05
VDU
−0.10
VDU
−0.05
VDIOV
−0.015
0.30
−0.13
VCU
0.50
−0.1
VCU
+0.025
VCU
+0.03
VCL
+0.05
VCL
+0.025
VDL
+0.05
VDU
+0.10
VDU
+0.05
VDIOV
+0.015
0.70
−0.07
1.2
−
−
Test
Test
Unit CondiCircuit
tion
DETECTION VOLTAGE
3.90 to 4.40 V, Adjustable
Overcharge detection voltage
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCU
VCL
VCL ≠ VCU
3.80 to 4.40 V,
Adjustable
VCL = VCU
VDL
2.00 to 3.00 V, Adjustable
VDU
2.00 to 3.40 V,
Adjustable
Discharge overcurrent detection voltage
VDIOV
Load short-circuiting detection voltage*2
Charge overcurrent detection voltage
0 V BATTERY CHARGE FUNCTION
VSHORT
VCIOV
0 V battery charge starting charger voltage
V0CHA
0 V battery charge inhibition battery voltage
V0INH
INTERNAL RESISTANCE
Resistance between VM pin and VDD pin
Resistance between VM pin and VSS pin
INPUT VOLTAGE
Operating voltage between VDD pin
and VSS pin
Operating voltage between VDD pin
and VM pin
INPUT CURRENT
Current consumption during operation
Current consumption at power-down
OUTPUT RESISTANCE
CO pin resistance “H”
CO pin resistance “L”
DO pin resistance “H”
DO pin resistance “L”
3.90 to 4.40 V, Adjustable,
*1
Ta = −5 to +55 °C
RVMD
RVMS
VDU ≠ VDL
VDU = VDL
0.05 to 0.30 V, Adjustable
−
−
0 V battery charging function
“available”
0 V battery charging function
“unavailable”
VDD = 1.8 V, VVM = 0 V
VDD = 3.5 V, VVM = 1.0 V
V
1
1
V
1
1
V
1
1
V
1
1
V
2
2
V
2
2
V
2
2
V
3
2
V
V
3
4
2
2
−
V
11
2
−
0.5
V
12
2
100
10
300
20
900
40
kΩ
kΩ
6
6
3
3
VCU
VCL
VCL
VDL
VDU
VDU
VDIOV
VDSOP1
−
1.5
−
8
V
−
−
VDSOP2
−
1.5
−
28
V
−
−
IOPE
IPDN
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
1.0
−
3.0
−
5.5
0.2
µA
µA
5
2
5
2
RCOH
RCOL
RDOH
RDOL
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V
VDO = 0.5 V, VDD =VVM = 1.8 V
2.5
2.5
2.5
2.5
5
5
5
5
10
10
10
10
kΩ
kΩ
kΩ
kΩ
7
7
8
8
4
4
4
4
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design,
not tested in production.
*2. In any conditions, Load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage (VDIOV).
Seiko Instruments Inc.
9
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
2. Except Detection Delay Time (−40 to +85 °C*1)
Table 9
Item
Symbol
Condition
*1
(−40 to +85 °C unless otherwise specified)
Test
Test
Min.
Typ. Max. Unit CondiCircuit
tion
DETECTION VOLTAGE
Overcharge detection voltage
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCU
3.90 to 4.40 V, Adjustable
VCL
3.80 to 4.40 V,
Adjustable
VCL = VCU
VDL
2.00 to 3.00 V, Adjustable
VDU
2.00 to 3.40 V,
Adjustable
Discharge overcurrent detection voltage
VDIOV
Load short-circuiting detection voltage*2
Charge overcurrent detection voltage
0 V BATTERY CHARGE FUNCTION
VSHORT
VCIOV
0 V battery charge starting charger voltage
V0CHA
0 V battery charge inhibition battery voltage
V0INH
INTERNAL RESISTANCE
Resistance between VM pin and VDD pin
Resistance between VM pin and VSS pin
INPUT VOLTAGE
Operating voltage between VDD pin
and VSS pin
Operating voltage between VDD pin
and VM pin
INPUT CURRENT
Current consumption during operation
Current consumption at power-down
OUTPUT RESISTANCE
CO pin resistance “H”
CO pin resistance “L”
DO pin resistance “H”
DO pin resistance “L”
VCL ≠ VCU
RVMD
RVMS
VDU ≠ VDL
VDU = VDL
0.05 to 0.30 V, Adjustable
−
−
0 V battery charging function
“available”
0 V battery charging function
“unavailable”
VDD = 1.8 V, VVM = 0 V
VDD = 3.5 V, VVM = 1.0 V
VCU
+ 0.040
VCL
+ 0.065
VCL
+ 0.04
VCU
− 0.060
VCL
− 0.08
VCL
− 0.06
VCU
VDL
− 0.11
VDL
VDL
+ 0.13
VDU
− 0.15
VDU
− 0.11
VDIOV
− 0.021
VDU
VDU
+ 0.19
VDU
+ 0.13
VDIOV
+ 0.024
VCL
VCL
VDU
VDIOV
V
1
1
V
1
1
V
1
1
V
2
2
V
2
2
V
2
2
V
3
2
0.16
− 0.14
0.50
− 0.1
0.84
− 0.06
V
V
3
4
2
2
1.7
−
−
V
11
2
−
−
0.3
V
12
2
78
7.2
300
20
1310
44
kΩ
kΩ
6
6
3
3
VDSOP1
−
1.5
−
8
V
−
−
VDSOP2
−
1.5
−
28
V
−
−
IOPE
IPDN
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
0.7
−
3.0
−
6.0
0.3
µA
µA
5
5
2
2
RCOH
RCOL
RDOH
RDOL
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V
VDO = 0.5 V, VDD = VVM = 1.8 V
1.2
1.2
1.2
1.2
5
5
5
5
15
15
15
15
kΩ
kΩ
kΩ
kΩ
7
7
8
8
4
4
4
4
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design,
not tested in production.
*2. In any conditions, Load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage (VDIOV).
10
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
3. Detection Delay Time
(1) S-8211CAA, S-8211CAH, S-8211CAI, S-8211CAJ, S-8211CAK,S-8211CAL, S-8211CAM, S-8211CAN, S8211CAR, S-8211CAS, S-8211CAU, S-8211CAY,S-8211CAZ, S-8211CBA, S-8211CBB
Table 10
Item
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
Overdischarge detection delay time
tDL
−
120
150
180
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
7.2
9
11
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
83
150
255
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
15
540
5
−
9
300
10
tSHORT
5
150
ms
Load short-circuiting detection delay time
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
DELAY TIME (Ta = −40 to +85 °C)
9
5
*1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
(2) S-8211CAB, S-8211CAV
Table 11
Item
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
−
120
150
180
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
7.2
9
11
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
450
560
670
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
83
150
255
ms
9
5
Load short-circuiting detection delay time
tDIOV
tSHORT
−
−
5
260
9
560
15
940
ms
µs
10
10
5
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
DELAY TIME (Ta = −40 to +85 °C) *1
Discharge overcurrent detection delay time
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
Seiko Instruments Inc.
11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(3) S-8211CAD
Table 12
Item
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
tCU
tDL
tDIOV
tSHORT
tCIOV
−
−
−
−
−
115
30
14.5
240
7.2
143
38
18
300
9
172
46
22
360
11
ms
ms
ms
µs
ms
9
9
10
10
10
5
5
5
5
5
tCU
tDL
tDIOV
tSHORT
tCIOV
−
−
−
−
−
82
20
10
150
5
143
38
18
300
9
240
65
30
540
15
ms
ms
ms
µs
ms
9
9
10
10
10
5
5
5
5
5
Symbol
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
DELAY TIME (Ta = −40 to +85 °C) *1
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
(4) S-8211CAE, S-8211CAT, S-8211CAX, S-8211CBR
Table 13
Item
Symbol
Test
Test
Unit CondiCircuit
tion
Condition
Min.
Typ.
Max.
0.96
1.2
1.4
s
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
Overdischarge detection delay time
tDL
−
120
150
180
Discharge overcurrent detection delay time
tDIOV
−
14.5
18
22
Load short-circuiting detection delay time
tSHORT
−
240
300
Charge overcurrent detection delay time
tCIOV
−
7.2
9
Overcharge detection delay time
tCU
−
0.7
1.2
Overdischarge detection delay time
tDL
−
83
150
Discharge overcurrent detection delay time
tDIOV
−
30
540
5
−
18
300
10
tSHORT
10
150
ms
Load short-circuiting detection delay time
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
DELAY TIME (Ta = −40 to +85 °C)
9
5
ms
9
5
ms
10
5
360
µs
10
5
11
ms
10
5
2.0
s
9
5
255
ms
9
5
*1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
12
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(5) S-8211CAF, S-8211CAO, S-8211CAP, S-8211CAQ, S-8211CBD, S-8211CBO
Table 14
Item
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
−
30
38
46
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
7.2
9
11
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
20
38
65
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
5
−
15
540
10
tSHORT
9
300
ms
Load short-circuiting detection delay time
5
150
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
DELAY TIME (Ta = −40 to +85 °C)
*1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
(6) S-8211CAW
Table 15
Item
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
−
120
150
180
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
3.6
4.5
5.4
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
83
150
255
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
5
−
7.7
540
10
tSHORT
4.5
300
ms
Load short-circuiting detection delay time
2.5
150
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
DELAY TIME (Ta = −40 to +85 °C)
*1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
Seiko Instruments Inc.
13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(7) S-8211CBN
Table 16
Item
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit CondiCircuit
tion
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
tCU
−
458
573
687
ms
9
Overdischarge detection delay time
tDL
−
120
150
180
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
3.6
4.5
5.4
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
3.6
4.5
5.4
ms
10
5
Overcharge detection delay time
tCU
−
334
573
955
ms
9
5
Overdischarge detection delay time
tDL
−
83
150
255
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
5
Load short-circuiting detection delay time
7.7
540
10
−
4.5
300
ms
tSHORT
2.5
150
µs
10
5
Charge overcurrent detection delay time
tCIOV
−
2.5
4.5
7.7
ms
10
5
DELAY TIME (Ta = −40 to +85 °C)
5
*1
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
14
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Test Circuits
Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
VVM and the DO pin level with respect to VSS.
(1) Overcharge Detection Voltage, Overcharge Release Voltage
(Test Condition 1, Test Circuit 1)
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and VSS pin at which VCO goes
from “H” to “L” when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge
release voltage (VCL) is defined as the voltage between the VDD pin and VSS pin at which VCO goes from “L” to “H”
when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference
between overcharge detection voltage (VCU) and overcharge release voltage (VCL).
(2) Overdischarge Detection Voltage, Overdischarge Release Voltage
(Test Condition 2, Test Circuit 2)
Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and VSS pin at which VDO goes
from “H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.
Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and VSS pin at which VDO goes
from “L” to “H” when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is defined as
the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL).
(3) Discharge Overcurrent Detection Voltage
(Test Condition 3, Test Circuit 2)
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and VSS pin whose
delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of discharge
overcurrent delay time when the voltage V2 is increased rapidly (within 10 µs) from the starting condition of
V1 = 3.5 V, V2 = 0 V.
(4) Load Short-circuiting Detection Voltage
(Test Condition 3, Test Circuit 2)
Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and VSS pin whose
delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of load short-circuiting
delay time when the voltage V2 is increased rapidly (within 10 µs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
(5) Charge Overcurrent Detection Voltage
(Test Condition 4, Test Circuit 2)
Charge overcurrent detection voltage (VCIOV) is defined as the voltage between the VM pin and VSS pin whose delay
time for changing VCO from “H” to “L” lies between the minimum and the maximum value of charge overcurrent delay
time when the voltage V2 is decreased rapidly (within 10 µs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
(6) Operating Current Consumption
(Test Condition 5, Test Circuit 2)
The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions
of V1 = 3.5 V and V2 = 0 V (normal status).
Seiko Instruments Inc.
15
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(7) Power-down Current Consumption
(Test Condition 5, Test Circuit 2)
The power-down current consumption (IPDN) is the current that flows through the VDD pin (IDD) under the set condition
of V1 = V2 = 1.5 V (overdischarge status).
(8) Resistance between VM Pin and VDD Pin
(Test Condition 6, Test Circuit 3)
The resistance between VM pin and VDD pin (RVMD) is the resistance between VM pin and VDD pin under the set
conditions of V1 = 1.8 V, V2 = 0 V.
(9) Resistance between VM Pin and VSS Pin
(Test Condition 6, Test Circuit 3)
The resistance between VM pin and VSS pin (RVMS) is the resistance between VM pin and VSS pin under the set
conditions of V1 = 3.5 V, V2 = 1.0 V.
(10) CO Pin Resistance “H”
(Test Condition 7, Test Circuit 4)
The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V,
V3 = 3.0 V.
(11) CO Pin Resistance “L”
(Test Condition 7, Test Circuit 4)
The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V,
V3 = 0.5 V.
(12) DO Pin Resistance “H”
(Test Condition 8, Test Circuit 4)
The DO pin H resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V,
V4 = 3.0 V.
(13) DO Pin Resistance “L”
(Test Condition 8, Test Circuit 4)
The DO pin L resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V.
(14) Overcharge Detection Delay Time
(Test Condition 9, Test Circuit 5)
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage
V1 momentarily increases (within 10 µs) from overcharge detection voltage (VCU) −0.2 V to overcharge detection
voltage (VCU) +0.2 V under the set condition of V2 = 0 V.
(15) Overdischarge Detection Delay Time
(Test Condition 9, Test Circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage
V1 momentarily decreases (within 10 µs) from overcharge detection voltage (VDL) +0.2 V to overcharge detection
voltage (VDL) −0.2 V under the set condition of V2 = 0 V.
16
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(16) Discharge Overcurrent Detection Delay Time
(Test Condition 10, Test Circuit 5)
Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to “L” after the voltage V2
momentarily increases (within 10 µs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
(17) Load Short-circuiting Detection Delay Time
(Test Condition 10, Test Circuit 5)
Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to “L” after the voltage V2
momentarily increases (within 10 µs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
(18) Charge Overcurrent Detection Delay Time
(Test Condition 10, Test Circuit 5)
Charge overcurrent detection delay time (tCIOV) is the time needed for VCO to go to “L” after the voltage V2
momentarily decreases (within 10 µs) from 0 V to −0.3 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
(19) 0 V Battery Charge Starting Charger Voltage (Products with 0 V Battery Charging Function Is “Available”)
(Test Condition 11, Test Circuit 2)
The 0 V charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and VM pin at which
VCO goes to “H” (VVM +0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of
V1 = V2 = 0 V.
(20) 0 V Battery Charge Inhibition Battery Voltage (Products with 0 V Battery Charging Function Is
“Unavailable”)
(Test Condition 12, Test Circuit 2)
The 0 V charge inhibition charger voltage (V0INH) is defined as the voltage between the VDD pin and VSS pin at which
VCO goes to “H” (VVM +0.1 V or higher) when the voltage V1 is gradually increased from the starting conditions of
V1 = 0 V, V2 = −4 V.
Seiko Instruments Inc.
17
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
R1 =
220 Ω
IDD
A
VDD
V1
Rev.5.0_00
V1
S-8211C Series
VSS
CO
V VDO
V VCO
V VCO
V2
COM
COM
Figure 5 Test Circuit 1
Figure 6 Test Circuit 2
VDD
V1
VDD
V1
S-8211C Series
VSS
VM
DO
CO
S-8211C Series
VSS
COM
VM
DO
A IVM
V2
CO
A IDO
A ICO
V4
V3
COM
Figure 7 Test Circuit 3
Figure 8 Test Circuit 4
VDD
V1
S-8211C Series
VSS
VM
DO
Oscilloscope
CO
Oscilloscope
V2
COM
Figure 9 Test Circuit 5
18
VM
DO
CO
V VDO
IDD
A
S-8211C Series
VSS
VM
DO
VDD
Seiko Instruments Inc.
V2
Rev.5.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
„ Operation
Remark Refer to the “Battery Protection IC Connection Example”.
1. Normal Status
This IC monitors the voltage of the battery connected between the VDD pin and VSS pin and the voltage difference
between the VM pin and VSS pin to control charging and discharging. When the battery voltage is in the range from
overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin voltage is in the range
from the charge overcurrent detection voltage (VCIOV) to discharge overcurrent detection voltage (VDIOV), the IC turns
both the charging and discharging control FETs on. This condition is called the normal status, and in this condition
charging and discharging can be carried out freely.
The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin
are not connected in the normal status.
Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short
the VM pin and VSS pin or connect the charger to restore the normal status.
2. Overcharge Status
When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211C Series turns the
charging control FET off to stop charging. This condition is called the overcharge status.
The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin
are not connected in the overcharge status.
The overcharge status is released in the following two cases ( (1) and (2) ).
(1) In the case that the VM pin voltage is higher than or equal to the charge overcurrent detection voltage (VCIOV),
and is lower than the discharge overcurrent detection voltage (VDIOV), S-8211C Series releases the overcharge
status when the battery voltage falls below the overcharge release voltage (VCL).
(2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV),
S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge detection
voltage (VCU).
The discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more than
the voltage at VSS pin due to the Vf voltage of the parasitic diode, because the discharge current flows through
the parasitic diode in the charging control FET. If this VM pin voltage is higher than or equal to the discharge
overcurrent detection voltage (VDIOV), S-8211C Series releases the overcharge status when the battery voltage is
lower than or equal to the overcharge detection voltage (VCU).
For the actual application boards, changing the battery voltage and the charger voltage simultaneously enables to
measure the overcharge release voltage (VCL). In this case, the charger is always necessary to have the
equivalent voltage level to the battery voltage. The charger keeps VM pin voltage higher than or equal to the
charge overcurrent detection voltage (VCIOV) and lower than or equal to the discharge overcurrent detection
voltage (VDIOV). S-8211C Series releases the overcharge status when the battery voltage falls below the
overcharge release voltage (VCL).
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the
battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is
connected, discharge overcurrent detection and load short-circuiting detection do not function
until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery
has an internal impedance of tens of mΩ, the battery voltage drops immediately after a heavy
load that causes overcurrent is connected, and discharge overcurrent detection and load shortcircuiting detection function.
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is
released when the VM pin voltage goes over the charge overcurrent detection voltage (VCIOV) by
removing the charger.
Seiko Instruments Inc.
19
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
3. Overdischarge Status
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status
and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211C Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the IC
(RVMD). When voltage difference between the VM pin and VDD pin then is 1.3 V (Typ.) or lower, the current
consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down
status.
The resistance (RVMS) between the VM pin and VSS pin is not connected in the power-down status and the
overdischarge status.
The power-down status is released when a charger is connected and the voltage difference between the VM pin and
VDD pin becomes 1.3 V (typ.) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than -0.7 V (Typ.), the S-8211C Series releases the overdischarge status and turns the discharging FET on when the
battery voltage reaches overdischarge detection voltage (VDL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not
lower than -0.7 V (Typ.), the S-8211C Series releases the overdischarge status when the battery voltage reaches
overdischarge release voltage (VDU) or higher.
4. Discharge Overcurrent Status (Discharge Overcurrent, Load Short-circuiting)
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the
discharge overcurrent detection voltage because the discharge current is higher than the specified value and the
status lasts for the discharge overcurrent detection delay time, the discharge control FET is turned off and
discharging is stopped. This status is called the discharge overcurrent status.
In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin
(RVMS) in the IC. However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is
connected. When the load is disconnected, the VM pin returns to the VSS potential.
This IC detects the status when the impedance between the EB+ pin and EB− pin (Refer to the Figure 14) increases
and is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to discharge
overcurrent detection voltage (VDIOV) or lower, the discharge overcurrent status is restored to the normal status.
Even if the connected impedance is smaller than automatic restoration level, the S-8211C Series will be restored to
the normal status from discharge overcurrent detection status when the voltage at the VM pin becomes the discharge
overcurrent detection voltage (VDIOV) or lower by connecting the charger.
The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge overcurrent detection
status.
20
Seiko Instruments Inc.
Rev.5.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
5. Charge Overcurrent Status
When a battery in the normal status is in the status where the voltage of the VM pin is lower than the charge
overcurrent detection voltage because the charge current is higher than the specified value and the status lasts for
the charge overcurrent detection delay time, the charge control FET is turned off and charging is stopped. This
status is called the charge overcurrent status.
This IC will be restored to the normal status from the charge overcurrent status when, the voltage at the VM pin
returns to charge overcurrent detection voltage (VCIOV) or higher by removing the charger.
The charge overcurrent detection function does not work in the overdischarge status.
The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin
are not connected in the charge overcurrent status.
6. 0 V Battery Charging Function “Available”
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB− pins by
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turnon voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the S8211C Series enters the normal status.
Caution 1. Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery
charging function.
2. The 0 V battery charge function has higher priority than the charge overcurrent detection
function. Consequently, a product in which use of the 0 V battery charging function is enabled
charges a battery forcibly and the charge overcurrent cannot be detected when the battery
voltage is lower than overdischarge detection voltage (VDL).
7. 0 V Battery Charging Function “Unavailable”
This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is
fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery
voltage (V0INH) or higher, charging can be performed.
Caution Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charging
function.
Seiko Instruments Inc.
21
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
8. Delay Circuit
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.
Remark 1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time
(tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load shortcircuiting detection voltage (VSHORT) is detected over the load short-circuiting detection delay time (tSHORT)
after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211C turns the discharging
control FET off within tSHORT from the time of detecting VSHORT.
VDD
DO Pin
tD
VSS
Load short-circuiting detection delay time (tSHORT)
0 ≤ tD ≤ tSHORT
Time
VDD
VSHORT
VM Pin
VDIOV
VSS
Time
Figure 10
2. When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the power-down status at
the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the
recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay
time is still lower than the overdischarge detection voltage, S-8211C Series shifts to the power-down
status.
22
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Timing Chart
(1) Overcharge Detection, Overdischarge Detection
VCU
VCL (VCU − VHC)
Battery voltage
VDU (VDL + VHD)
VDL
DO pin voltage
VDD
VSS
VDD
CO pin voltage
VSS
VEB−
VDD
VM pin voltage
VDIOV
VSS
VCIOV
VEB−
Charger connection
Load connection
Overcharge detection delay time (tCU)
Mode
*1
(1)
Overdischarge detection delay time (tDL)
(2)
(1)
(3)
(1)
*1. (1) : Normal mode
(2) : Overcharge mode
(3) : Overdischarge mode
Remark The charger is assumed to charge with a constant current.
Figure 11
Seiko Instruments Inc.
23
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(2) Discharge Overcurrent Detection
VCU
VCL (VCU − VHC )
Battery voltage
VDU (VDL + VHD )
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VDD
VM pin voltage
VSHORT
VDIOV
VSS
Load connection
Discharge overcurrent
detection delay time (tDIOV)
Mode *1
(1)
(2)
Load short-circuiting
detection delay time (tSHORT)
(1)
*1. (1) : Normal mode
(2) : Discharge overcurrent mode
Remark The charger is assumed to charge with a constant current.
Figure 12
24
Seiko Instruments Inc.
(2)
(1)
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(3) Charge Overcurrent Detection
VCU
VCL (VCU − VHC )
Battery voltage
VDU(VDL + VHD )
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VSS
VEB−
VDD
VM pin voltage
VSS
VCIOV
VEB−
Charger connection
Load connection
Mode
*1
Charge overcurrent detection
delay time (tCIOV)
(2)
(1)
Overdischarge detection
delay time(tDL)
Charge overcurrent detection
delay time (tCIOV)
(2)
(1)
(3)
(1)
*1. (1) : Normal mode
(2) : Charge overcurrent mode
(3) : Overdischarge mode
Remark The charger is assumed to charge with a constant current.
Figure 13
Seiko Instruments Inc.
25
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Battery Protection IC Connection Example
EB+
R1
VDD
Battery C1
S-8211C Series
VSS
DO
CO
FET1
VM
R2
FET2
EB−
Figure 14
Table 17 Constants for External Components
Symbol
Part
Purpose
Typ.
Min.
Max.
Remark
Threshold voltage ≤ Overdischarge
*1
detection voltage
N-channel
Discharge control
−
−
−
FET1
MOS FET
Gate to source withstanding voltage ≥
*2
Charger voltage
Threshold voltage ≤ Overdischarge
detection voltage *1
N-channel
Charge control
−
−
−
FET2
MOS FET
Gate to source withstanding voltage ≥
*2
Charger voltage
Resistance should be as small as
possible to avoid lowering the
ESD protection,
220 Ω
100 Ω
330 Ω
R1
Resistor
overcharge detection accuracy due to
For power fluctuation
current consumption. *3
Connect a capacitor of 0.022 µF or
C1
Capacitor For power fluctuation
0.1 µF
0.022 µF
1.0 µF
higher between VDD pin and VSS pin. *4
Protection for reverse
Select as large a resistance as possible
R2
Resistor
connection of a
2 kΩ
300 Ω
2 kΩ
to prevent current when a charger is
*5
connected in reverse.
charger
*1. If the threshold voltage of an FET is low, the FET may not cut the charging current. If an FET with a threshold voltage
equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge
is detected.
*2. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*3. If R1 has a high resistance, the voltage between VDD pin and VSS pin may exceed the absolute maximum rating when
a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 100 Ω or higher
as R1 for ESD protection.
*4. If a capacitor of less than 0.022 µF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be
sure to connect a capacitor of 0.022 µF or higher to C1.
*5. If R2 has a resistance higher than 2 kΩ, the charging current may not be cut when a high-voltage charger is connected.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
26
Seiko Instruments Inc.
Rev.5.0_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
„ Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package
power dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
Seiko Instruments Inc.
27
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Characteristics (Typical Data)
1. Current Consumption
(1) IOPE vs. Ta
(2) IPDN vs. Ta
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−40 −25
5
4
IPDN [µA]
IOPE [µA]
6
3
2
1
0
−40 −25
0
25
Ta [°C]
50
75 85
4
VDD [V]
6
8
0
25
Ta [°C]
50
7585
(3) IOPE vs. VDD
IOPE [µA]
6
5
4
3
2
1
0
0
2
2. Overcharge Detection / Release Voltage, Overdischarge Detection / Release Voltage,
Overcurrent Detection Voltage, and Delay Time
4.350
4.345
4.340
4.335
4.330
4.325
4.320
4.315
4.310
4.305
4.300
−40 −25
(2) VCL vs. Ta
VCL [V]
VCU [V]
(1) VCU vs. Ta
0
25
Ta [°C]
50
75 85
28
2.95
2.94
2.93
2.92
2.91
2.90
2.89
2.88
2.87
2.86
2.85
−40 −25
0
25
Ta [°C]
50
75 85
50
75 85
(4) VDL vs. Ta
VDL [V]
VDU [V]
(3) VDU vs. Ta
4.125
4.115
4.105
4.095
4.085
4.075
4.065
4.055
4.045
4.035
4.025
−40 −25
0
25
50
Ta [°C]
75 85
Seiko Instruments Inc.
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
−40 −25
0
25
Ta [°C]
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
tCU [s]
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
−40 −25
(6) tCL vs. Ta
tCL [s]
(5) tCU vs. Ta
0
25
Ta [°C]
50
7585
(7) tDU vs. Ta
0
25
Ta [°C]
50
tDIOV [ms]
VDIOV [V]
25
Ta [°C]
50
7585
0
25
Ta [°C]
50
7585
(10) tDIOV vs. VDD
0.175
0.170
0.165
0.160
0.155
0.150
0.145
0.140
0.135
0.130
0.125
−40 −25
0
25
Ta [°C]
50
75 85
14
13
12
11
10
9
8
7
6
5
4
3.0
3.5
4.0
4.5
VDD [V]
(11) tDIOV vs. Ta
(12) VCIOV vs. Ta
VCIOV [V]
tDIOV [ms]
200
190
180
170
160
150
140
130
120
110
100
−40 −25
7585
(9) VDIOV vs. Ta
14
13
12
11
10
9
8
7
6
5
4
−40 −25
0
(8) tDL vs. Ta
tDL [ms]
tDU [ms]
2.85
2.75
2.65
2.55
2.45
2.35
2.25
2.15
2.05
1.95
1.85
−40 −25
50
48
46
44
42
40
38
36
34
32
30
−40 −25
0
25
Ta [°C]
50
75 85
−0.05
−0.06
−0.07
−0.08
−0.09
−0.10
−0.11
−0.12
−0.13
−0.14
−0.15
−40 −25
Seiko Instruments Inc.
0
25
Ta [°C]
50
7585
29
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
14
13
12
11
10
9
8
7
6
5
4
3.0
(14) tCIOV vs. Ta
tCIOV [ms]
tCIOV [ms]
(13) tCIOV vs. VDD
Rev.5.0_00
3.5
4.0
4.5
VDD [V]
0
25
Ta [°C]
50
75 85
(16) tSHORT vs. VDD
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
−40 −25
tSHORT [ms]
VSHORT [V]
(15) VSHORT vs. Ta
14
13
12
11
10
9
8
7
6
5
4
−40 −25
0
25
50
Ta [°C]
7585
25
50
Ta [°C]
7585
0.65
0.63
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
3.0
3.5
4.0
4.5
VDD [V]
tSHORT [ms]
(17) tSHORT vs. Ta
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−40 −25
0
3. CO pin / DO pin
(2) ICOL vs. VCO
0
0.5
−0.1
0.4
ICOL [mA]
ICOH [mA]
(1) ICOH vs. VCO
−0.2
−0.3
−0.4
−0.5
0.2
0.1
0
1
2
3
4
VCO [V]
30
0.3
Seiko Instruments Inc.
0
0
1
2
VCO [V]
3
4
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(4) IDOL vs. VDO
0
−0.05
−0.10
0.20
IDOL [mA]
IDOH [mA]
(3) IDOH vs. VDO
−0.15
−0.20
−0.25
−0.30
0
1
2
3
4
VDO [V]
Seiko Instruments Inc.
0.15
0.10
0.05
0
0
0.5
1.0
VDO [V]
1.5
31
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
„ Marking Specifications
(1) SOT-23-5
5
SOT-23-5
Top view
(1) to (3):
(4)
:
4
Product Code (refer to Product Name vs. Product Code)
Lot number
(1) (2) (3) (4)
1
2
3
Product Name vs. Product Code
Product Name
Product Code
(1)
(2)
(3)
S-8211CAA-M5T1G
R
Z
A
S-8211CAB-M5T1G
R
Z
B
S-8211CAD-M5T1G
R
Z
D
S-8211CAE-M5T1G
R
Z
E
S-8211CAF-M5T1G
R
Z
F
S-8211CAH-M5T1G
R
Z
H
S-8211CAI-M5T1G
R
Z
I
S-8211CAJ-M5T1G
R
Z
J
S-8211CAK-M5T1G
R
Z
K
S-8211CAL-M5T1G
R
Z
L
S-8211CAM-M5T1G
R
Z
M
S-8211CAN-M5T1G
R
Z
N
S-8211CAO-M5T1G
R
Z
O
S-8211CAP-M5T1G
R
Z
P
S-8211CAQ-M5T1G
R
Z
Q
S-8211CAR-M5T1G
R
Z
R
S-8211CAS-M5T1G
R
Z
S
S-8211CAT-M5T1G
R
Z
T
S-8211CAU-M5T1G
R
Z
U
S-8211CAV-M5T1G
R
Z
V
S-8211CAY-M5T1G
R
Z
Y
S-8211CAZ-M5T1G
R
Z
Z
Remark Please contact our sales office for the products other than those specified above.
32
Seiko Instruments Inc.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.5.0_00
(2) SNT-6A
SNT-6A
Top view
1
(1) (2) (3)
3
6
(4) (5) (6)
2
(1) to (3):
(4) to (6):
Product Code (refer to Product Name vs. Product Code)
Lot number
5
4
Product Name vs. Product Code
Product Name
Product Code
(1)
(2)
(3)
S-8211CAA-I6T1G
R
Z
A
S-8211CAB-I6T1G
R
Z
B
S-8211CAD-I6T1G
R
Z
D
S-8211CAE-I6T1G
R
Z
E
S-8211CAF-I6T1G
R
Z
F
S-8211CAH-I6T1G
R
Z
H
S-8211CAI-I6T1G
R
Z
I
S-8211CAJ-I6T1G
R
Z
J
S-8211CAK-I6T1G
R
Z
K
S-8211CAL-I6T1G
R
Z
L
S-8211CAM-I6T1G
R
Z
M
S-8211CAN-I6T1G
R
Z
N
S-8211CAO-I6T1G
R
Z
O
S-8211CAP-I6T1G
R
Z
P
S-8211CAQ-I6T1G
R
Z
Q
S-8211CAR-I6T1G
R
Z
R
S-8211CAS-I6T1G
R
Z
S
S-8211CAT-I6T1G
R
Z
T
S-8211CAU-I6T1G
R
Z
U
S-8211CAV-I6T1G
R
Z
V
S-8211CAW-I6T1G
R
Z
W
S-8211CAX-I6T1G
R
Z
X
S-8211CAY-I6T1G
R
Z
Y
S-8211CBA-I6T1G
R
7
A
S-8211CBB-I6T1G
R
7
B
S-8211CBD-I6T1G
R
7
D
S-8211CBN-I6T1G
R
7
N
S-8211CBO-I6T1G
R
7
O
S-8211CBR-I6T1G
R
7
R
Remark Please contact our sales office for the products other than those specified above.
Seiko Instruments Inc.
33
2.9±0.2
1.9±0.2
4
5
1
2
+0.1
0.16 -0.06
3
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
No.
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
2.0±0.05
+0.2
ø1.0 -0
0.25±0.1
4.0±0.1
1.4±0.2
3.2±0.2
3 2 1
4
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
No.
MP005-A-C-SD-2.1
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
SOT235-A-Reel
TITLE
No.
MP005-A-R-SD-1.1
SCALE
QTY.
UNIT
mm
Seiko Instruments Inc.
3,000
1.57±0.03
6
1
5
4
2
3
+0.05
0.08 -0.02
0.5
0.48±0.02
0.2±0.05
No. PG006-A-P-SD-2.0
TITLE
SNT-6A-A-PKG Dimensions
No.
PG006-A-P-SD-2.0
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
1.85±0.05
5°
ø0.5 -0
4.0±0.1
0.65±0.05
3 2 1
4
5 6
Feed direction
No. PG006-A-C-SD-1.0
TITLE
SNT-6A-A-Carrier Tape
PG006-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PG006-A-R-SD-1.0
TITLE
SNT-6A-A-Reel
No.
PG006-A-R-SD-1.0
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
0.52
1.36
0.52
0.3
0.2
0.3
0.2
0.3
Caution Making the wire pattern under the package is possible. However, note that the package
may be upraised due to the thickness made by the silk screen printing and of a solder
resist on the pattern because this package does not have the standoff.
No. PG006-A-L-SD-3.0
TITLE
SNT-6A-A-Land Recommendation
PG006-A-L-SD-3.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
•
•
•
•
•
•
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.