UMS CHA1077A

CHA1077a
RoHS COMPLIANT
W-band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1077a is a W-band monolithic 3stages low noise amplifier. All the active
devices are internally self-biased. This chip is
compatible with automatic equipment for
assembly.
The circuit is manufactured on P-HEMT
process: 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
IN
OUT
+V
-V
W-band amplifier block-diagram
Main Features
W-band low noise amplifier
High gain
Wide operating frequency range
High temperature range
On-chip self biasing
Additional external resistor allows to
choose getting more gain instead of a
minimum noise factor
Automatic assembly oriented
Low DC power consumption
BCB layer protection
Chip size: 2.6 x 1.32 x 0.1mm
Small signal gain
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min
Typ
Unit
77
GHz
F_op
Operating frequency
G_lin
Small signal gain
15
dB
Noise figure
4.5
dB
9
dBm
NF
P_1dB
76
Max
Output power at 1dB gain compression
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHA1077a6013 - 13 Jan 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band LNA
CHA1077a
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”.
Symbol
F_op
G_lin
G_fl
NF
P_out_1dB
Is
VSWR_in
VSWR_out
+V
+I
-V
-I
Top
Parameter
Operating frequency
Small signal gain
Small signal gain flatness
Noise figure
Output power at 1dB gain compression
Reverse isolation
VSWR at input port (50Ω)
VSWR at output port (50Ω)
Positive supply voltage (1)
Positive supply current
Negative supply voltage (1)
Negative supply current
Operating temperature range
Min
76
11
6
20
4.4
-4.6
-10
-40
Typ
15
0.5
4.5
9
30
2:1
2:1
4.5
40
-4.5
-6
Max
77
19
1
6.5
Unit
GHz
dB
dB
dB
dBm
dB
2.5:1
2.5:1
4.6
70
-4.4
0
100
V
mA
V
mA
°C
(1) Negative supply voltage must be applied at least 1us before positive supply
voltage.
Absolute Maximum Ratings (1)
Symbol
P_in
+V
-V
+I
-I
Tstg
(1)
(2)
Parameter
Maximum input power (2)
Positive supply voltage
Negative supply voltage
Positive supply current
Negative supply current
Storage temperature range
Values
3
5
-5
80
-13
-55 to +155
Unit
dBm
V
V
mA
mA
°C
Operation of this device above anyone of these parameters may cause permanent damage.
CW mode
Ref. DSCHA1077a6013 - 13 Jan 06
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
CHA1077a
Chip Mechanical Data and Pin References
55
2475
10991
9
6
8
5
405
405
7
0
1
2
3
4
70
645
945
1245
1845
Origin 0,0
Layout 2530X1250
Unit = µm
External chip size (layout size + dicing streets) = 2600X1320 +/-35
Chip thickness = 100 +/- 10
HF Pads (5,8) = 105 X 86 (BCB opening)
DC/IF Pads = 86 x 83 (BCB opening)
Pin number
Pin name
4, 6, 7, 9
3
5
OUT
8
IN
0
+V
1
-V1
2
-V23
Ref. DSCHA1077a6013 - 13 Jan 06
Description
Ground: should not be bonded. If required,
please ask for more information.
Ground (optional)
RF output port
RF input port
Positive supply voltage
Negative supply voltage for the first stage
Negative supply voltage for the second and third
stage
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
CHA1077a
Typical Assembly and Bias Configuration to get minimum
noise figure :
10991
L_in
µ- strip line
9
6
8
5
7
0
2
L_out
4
3
µ- strip line
>= 120pF
+V
-V
DC lines
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self-biased. An external capacitor is recommended for
the positive and negative supply voltages.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have
to be according to the following recommendation.
Port
Equivalent inductance
(nH)
Wire length (mm)
(1)
IN
OUT
L_in = 0.25
L_out = 0.25
0.34
0.34
(1) This value is the total length including the necessary loop from pad to
pad.
For a micro-strip configuration a hole in the substrate is necessary for chip
assembly.
Ref. DSCHA1077a6013 - 13 Jan 06
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
CHA1077a
Typical Assembly and Bias Configuration to increase the
gain :
10991
L_in
µ- strip line
9
6
8
5
7
0
1
4
2
L_out
µ- strip line
>= 120pF
+V
DC lines
R
-V
Let’s tune the value of the external resistor R to control the biasing point of the
first stage and then getting a higher gain for the LNA (trade-off ability between the
gain and the noise factor).
Typical value of the external resistor R :
R (kΩ)
Description
0
2
Low-noise configuration
Maximum gain configuration
Ref. DSCHA1077a6013 - 13 Jan 06
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
CHA1077a
As the connections at 77GHz (between MMIC and MMIC or between MMIC and
external substrate) are critical, the transition matching network is split into two
parts: one on MMIC and one on the external substrate. This choice allows doing
also a direct connection between MMICs. For a connection to an external
substrate a network is proposed on soft substrate for IN and OUT ports. The
following drawings give the dimensions for a RO3003 substrate
(thickness=0.127mm, εr=3).
500 um
Bonding area
865 um
300 um
235 um
Wire length :
340 µm
225 um
Proposed matching network for a 50Ω transition between IN port
and a µ-strip line on RO3003 substrate
500 um
370 um
Bonding area
225 um0
10 um
300 um
235 um
Wire length :
340 µm
Proposed matching network for a 50Ω transition between OUT port and a
µ-strip line on RO3003 substrate
Ref. DSCHA1077a6013 - 13 Jan 06
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
Ref. DSCHA1077a6013 - 13 Jan 06
CHA1077a
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band LNA
CHA1077a
Ordering Information
Chip form
:
CHA1077a98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. DSCHA1077a6013 - 13 Jan 06
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice