PROCESS CPD82X Central Schottky Diode Semiconductor Corp. High Current, Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 5.5 MILS Anode Bonding pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 52,965 PRINCIPAL DEVICE TYPES CMDSH2-3 CMDSH2-4L CMOSH2-4L CMUSH2-4L CMKSH2-4L CMXSH2-4L 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com TM R0 (20- January 2006)